National Semiconductor Buffer Amplifiers 12
| Part | RoHS | Manufacturer | Amplifier Type | Temperature Grade | Terminal Form | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Nominal Unity Gain Bandwidth | Maximum Negative Supply Voltage Limit | Low-Bias | Maximum Input Offset Voltage | Maximum Average Bias Current (IIB) | Surface Mount | No. of Functions | Minimum Common Mode Reject Ratio | Technology | Screening Level | Nominal Common Mode Reject Ratio | Maximum Supply Current | Nominal Negative Supply Voltage (Vsup) | Architecture | Programmable Power | Packing Method | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Package Style (Meter) | Package Equivalence Code | Minimum Slew Rate | Sub-Category | Nominal Slow Rate | Maximum Supply Voltage Limit | Terminal Pitch | Maximum Operating Temperature | Maximum Bias Current (IIB) @25C | Frequency Compensation | Minimum Voltage Gain | Minimum Operating Temperature | Terminal Finish | Terminal Position | Low-Offset | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Seated Height | Width | Qualification | Minimum Output Current | Nominal Bandwidth (3dB) | Micropower | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Length | Wideband | Power |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
National Semiconductor |
Buffer |
Military |
Wire |
8 |
TO-99 |
Round |
Metal |
-22 V |
10 uA |
No |
1 |
Bipolar |
38535Q/M;38534H;883B |
10 mA |
-12 V |
12 V |
±12 V |
Cylindrical |
CAN8,.2 |
Buffer Amplifiers |
200 V/us |
22 V |
125 °C (257 °F) |
-55 °C (-67 °F) |
Tin Lead |
Bottom |
O-MBCY-W8 |
No |
e0 |
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|
National Semiconductor |
Buffer |
Military |
Wire |
8 |
TO-99 |
Round |
Metal |
-22 V |
10 uA |
No |
1 |
Bipolar |
10 mA |
-12 V |
12 V |
±12 V |
Cylindrical |
CAN8,.2 |
Buffer Amplifiers |
200 V/us |
22 V |
125 °C (257 °F) |
-55 °C (-67 °F) |
Tin Lead |
Bottom |
O-MBCY-W8 |
No |
30 MHz |
e0 |
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|
National Semiconductor |
Buffer |
Military |
Wire |
8 |
TO-5 |
Round |
Metal |
-22 V |
No |
1 |
Bipolar |
38535Q/M;38534H;883B |
10 mA |
-12 V |
12 V |
±12 V |
Cylindrical |
CAN8,.2 |
Buffer Amplifiers |
200 V/us |
22 V |
125 °C (257 °F) |
-55 °C (-67 °F) |
Tin Lead |
Bottom |
O-MBCY-W8 |
No |
30 MHz |
e0 |
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|
National Semiconductor |
Buffer |
Industrial |
Gull Wing |
8 |
SOP |
Rectangular |
Plastic/Epoxy |
-6.75 V |
15 mV |
Yes |
2 |
Bipolar |
3.4 mA |
-5 V |
5 V |
±2.5/±6 V |
Small Outline |
SOP8,.25 |
250 V/us |
Buffer Amplifiers |
600 V/us |
6.75 V |
0.05 in (1.27 mm) |
85 °C (185 °F) |
15 uA |
-40 °C (-40 °F) |
Matte Tin |
Dual |
R-PDSO-G8 |
1 |
0.069 in (1.75 mm) |
0.154 in (3.899 mm) |
No |
130 MHz |
e3 |
40 s |
260 °C (500 °F) |
0.193 in (4.902 mm) |
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|
National Semiconductor |
Buffer |
Military |
Wire |
8 |
Round |
Metal |
1 |
Hybrid |
MIL-STD-883 Class C |
-12 V |
12 V |
±12 V |
Cylindrical |
CAN8,.2 |
Buffer Amplifiers |
125 °C (257 °F) |
-55 °C (-67 °F) |
Tin/Lead |
Bottom |
O-MBCY-W8 |
No |
e0 |
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|
National Semiconductor |
Buffer |
Other |
Through-Hole |
8 |
DIP |
Rectangular |
Plastic/Epoxy |
-20 V |
25 mV |
5 nA |
No |
1 |
FET |
24 mA |
-15 V |
15 V |
±15 V |
In-Line |
DIP8,.9 |
2000 V/us |
Buffer Amplifiers |
2400 V/us |
20 V |
0.1 in (2.54 mm) |
85 °C (185 °F) |
5 nA |
-25 °C (-13 °F) |
Tin Lead |
Dual |
R-XDIP-T8 |
0.244 in (6.1976 mm) |
0.9 in (22.86 mm) |
No |
200 MHz |
e0 |
0.49 in (12.446 mm) |
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|
National Semiconductor |
Buffer |
Military |
Wire |
12 |
TO-8 |
Round |
Metal |
-20 V |
15 mV |
250 pA |
No |
1 |
FET |
MIL-STD-883 Class B (Modified) |
22 mA |
-15 V |
15 V |
±15 V |
Cylindrical |
QUAD12,.4SQ |
2000 V/us |
Buffer Amplifiers |
2400 V/us |
20 V |
0.1 in (2.54 mm) |
125 °C (257 °F) |
2.5 nA |
-55 °C (-67 °F) |
Tin/Lead |
Bottom |
O-MBCY-W12 |
No |
200 MHz |
e0 |
|||||||||||||||||||||||
|
National Semiconductor |
Buffer |
Military |
Wire |
8 |
TO-99 |
Round |
Metal |
-22 V |
10 uA |
No |
1 |
Bipolar |
MIL-STD-883 Class B (Modified) |
-12 V |
12 V |
±12 V |
Cylindrical |
CAN8,.2 |
Buffer Amplifiers |
200 V/us |
22 V |
125 °C (257 °F) |
-55 °C (-67 °F) |
Tin/Lead |
Bottom |
O-MBCY-W8 |
No |
e0 |
|||||||||||||||||||||||||||||
|
National Semiconductor |
Buffer |
Military |
Through-Hole |
8 |
DIP |
Rectangular |
Plastic/Epoxy |
-20 V |
15 mV |
2.5 nA |
No |
1 |
FET |
22 mA |
-15 V |
15 V |
±15 V |
In-Line |
DIP8,.9 |
2000 V/us |
Buffer Amplifiers |
2400 V/us |
20 V |
0.1 in (2.54 mm) |
125 °C (257 °F) |
2.5 nA |
-55 °C (-67 °F) |
Tin Lead |
Dual |
R-XDIP-T8 |
0.244 in (6.1976 mm) |
0.9 in (22.86 mm) |
No |
200 MHz |
e0 |
0.49 in (12.446 mm) |
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|
National Semiconductor |
Buffer |
Military |
Wire |
12 |
QIP |
Round |
Metal |
-20 V |
15 mV |
2.5 nA |
No |
1 |
Hybrid |
MIL-STD-883 Class B |
22 mA |
-15 V |
15 V |
±15 V |
Cylindrical |
QUAD12,.4SQ |
1000 V/us |
Buffer Amplifiers |
20 V |
0.1 in (2.54 mm) |
125 °C (257 °F) |
2.5 nA |
-55 °C (-67 °F) |
Tin Lead |
Bottom |
O-MBCY-W12 |
No |
200 MHz |
e0 |
||||||||||||||||||||||||
|
National Semiconductor |
Buffer |
Other |
Wire |
8 |
TO-5 |
Round |
Metal |
-18 V |
6 mV |
10 nA |
No |
1 |
Bipolar |
-15 V |
15 V |
±15 V |
Cylindrical |
CAN8,.2 |
Buffer Amplifiers |
30 V/us |
18 V |
85 °C (185 °F) |
-25 °C (-13 °F) |
Tin Lead |
Bottom |
O-MBCY-W8 |
No |
20 MHz |
e0 |
||||||||||||||||||||||||||||
|
National Semiconductor |
Buffer |
Other |
Wire |
8 |
TO-99 |
Round |
Metal |
-22 V |
10 uA |
No |
1 |
Bipolar |
10 mA |
-12 V |
12 V |
±12 V |
Cylindrical |
CAN8,.2 |
Buffer Amplifiers |
200 V/us |
22 V |
85 °C (185 °F) |
0 °C (32 °F) |
Tin Lead |
Bottom |
O-MBCY-W8 |
No |
30 MHz |
e0 |
Buffer amplifiers are electronic circuits that are designed to provide a high input impedance and a low output impedance. They are used to isolate one part of a circuit from another, preventing changes in one part of the circuit from affecting the other.
The primary function of a buffer amplifier is to prevent loading effects, which occur when a device with a low input impedance is connected to a device with a high output impedance. In this scenario, the high output impedance of the first device may cause a decrease in signal strength or distortion in the second device.
By using a buffer amplifier, the high output impedance of the first device is isolated from the second device, ensuring that the signal is transferred with minimal distortion. The buffer amplifier acts as a bridge between the two devices, allowing them to operate independently.
Buffer amplifiers are commonly used in audio applications, such as preamplifiers, where they can be used to isolate a sensitive input signal from a power amplifier that requires a low impedance input. They are also used in other applications, such as instrumentation, signal conditioning, and data acquisition, where signal integrity is critical.