National Semiconductor EPROM 14

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Maximum Access Time	Programming Voltage (V)
NMC27C64Q150	National Semiconductor	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0	.0001 Amp	150 ns	13
NMC27C64QE200	National Semiconductor	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0	.0001 Amp	200 ns	13
NMC27C64Q250	National Semiconductor	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0	.0001 Amp	250 ns	13
NMC27C16BQ200	National Semiconductor	UVPROM	COMMERCIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T24	5.5 V	5.969 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	TTL COMPATIBLE INPUT & OUTPUT LEVELS	e0	.0001 Amp	200 ns
NMC27C64Q15	National Semiconductor	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.715 mm	15.24 mm	Not Qualified	65536 bit	4.75 V		e0	.0001 Amp	150 ns	13
NMC27C64Q200	National Semiconductor	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0	.0001 Amp	200 ns	13
NMC27C64QE150	National Semiconductor	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0	.0001 Amp	150 ns	13
NMC27C64Q25	National Semiconductor	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE				8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	65536 bit			e0		250 ns	12.5
NM27C128Q150	National Semiconductor	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	131072 bit	4.5 V		e0	.0001 Amp	150 ns	12.75
NMC27C128BQ200	National Semiconductor	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.715 mm	15.24 mm	Not Qualified	131072 bit	4.5 V		e0	.0001 Amp	200 ns	12.75
NM27C010Q120	National Semiconductor	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T32	5.5 V	5.969 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0	.0001 Amp	120 ns
NM27C256QE120	National Semiconductor	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0	.0001 Amp	120 ns	12.75
NM27C512Q150	National Semiconductor	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T28	5.5 V	5.715 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0	.0001 Amp	150 ns
NMC27C32BQE200	National Semiconductor	UVPROM	INDUSTRIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	85 Cel	3-STATE	4KX8	4K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T24	5.5 V	5.969 mm	15.24 mm	Not Qualified	32768 bit	4.5 V	TTL/CMOS COMPATIBLE INPUT & OUTPUT LEVELS	e0	.0001 Amp	200 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.