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National Semiconductor Other Function Memory ICs 1

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Other Function Memory ICs

Manufacturers (1)

Memory IC Type

CACHE SRAM
CONFIGURATION MEMORY
CRYPTO MEMORY
CRYPTORF MEMORY
DDR DRAM MODULE
MEMORY CIRCUIT
NFC/RFID TAGS AND TRANSPONDERS
OTP ROM
SPI BUS SERIAL EEPROM
VIDEO DRAM

Temperature Grade

AUTOMOTIVE
COMMERCIAL
COMMERCIAL EXTENDED
INDUSTRIAL
MILITARY
OTHER

No. of Terminals

Package Code

Refresh Cycles

1024
2048
32
4096
512
64
8192

Package Shape

RECTANGULAR
ROUND
SQUARE
UNSPECIFIED

Total Dose (V)

1M Rad(Si)

Package Body Material

CERAMIC
CERAMIC, GLASS-SEALED
CERAMIC, METAL-SEALED COFIRED
METAL
PLASTIC/EPOXY
UNSPECIFIED

Access Mode

SINGLE BANK PAGE BURST

Surface Mount

NO
YES

No. of Functions

1

Technology

CMOS
ECL
HYBRID
MOS
TTL

Screening Level

38535Q/M;38534H;883B
AEC-Q100
MIL-PRF-38535 Class B
MIL-PRF-38535 Class V
MIL-STD-883 Class B (Modified)
TS 16949

Terminal Form

BALL
BU
BUTT
C BEND
FLAT
GULL WING
J BEND
NO LEAD
PIN/PEG
THROUGH-HOLE
UNSPECIFIED
WIRE

Parallel or Serial

PARALLEL
SERIAL

Operating Mode

ASYNCHRONOUS
SYNCHRONOUS

Sector Size (Words)

8K,64K

Maximum Supply Current

No. of Words

Sequential Burst Length

1,2,4,8,FP

Self Refresh

NO
YES

Input/Output Type

COMMON
SEPARATE

Nominal Supply Voltage / Vsup (V)

1.1
1.2
1.35
1.5
1.55
1.8
1.85
2
2.5
2.6
2.65
2.7
2.8
2.9
3
3.3
3.6
4.5
5

Mixed Memory Type

DRAM+NAND
EEPROM+FLASH
EEPROM+SDRAM
EEPROM+SRAM
EPROM+FLASH
FLASH+DRAM
FLASH+LPDDR
FLASH+PSRAM
FLASH+PSRAM+SRAM
FLASH+SDRAM
FLASH+SRAM
NAND+FLASH
PSRAM+SRAM
ROM+SRAM

Toggle Bit

NO

Power Supplies (V)

Memory Width

1
10
11
12
16
2
32
36
4
40
64
72
8
9

Package Style (Meter)

CHIP CARRIER
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
CHIP CARRIER, VERY THIN PROFILE
CYLINDRICAL
DISK BUTTON
FLATPACK
FLATPACK, LOW PROFILE, FINE PITCH
FLATPACK, THIN PROFILE
FLATPACK, THIN PROFILE, FINE PITCH
GRID ARRAY
GRID ARRAY, FINE PITCH
GRID ARRAY, LOW PROFILE
GRID ARRAY, LOW PROFILE, FINE PITCH
GRID ARRAY, THIN PROFILE
GRID ARRAY, THIN PROFILE, FINE PITCH
GRID ARRAY, VERY THIN PROFILE
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
IN-LINE
IN-LINE, SHRINK PITCH
MICROELECTRONIC ASSEMBLY
SMALL OUTLINE
SMALL OUTLINE, HEAT SINK/SLUG
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
SMALL OUTLINE, LOW PROFILE
SMALL OUTLINE, SHRINK PITCH
SMALL OUTLINE, THIN PROFILE
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
SMALL OUTLINE, VERY THIN PROFILE
SPECIAL SHAPE
UNCASED CHIP

Package Equivalence Code

Sub-Category

EEPROMs
FIFOs
Flash Memories
OTP ROMs
Other Memory ICs
SRAMs

Minimum Data Retention Time

10
20

Terminal Pitch

.3 mm
.4 mm
.5 mm
.55 mm
.6 mm
.635 mm
.65 mm
.7 mm
.704 mm
.75 mm
.8 mm
.95 mm
1 mm
1.25 mm
1.27 mm
1.778 mm
2.3 mm
2.54 mm

Maximum Operating Temperature

100 Cel
105 Cel
110 Cel
125 Cel
50 Cel
55 Cel
60 Cel
65 Cel
70 Cel
80 Cel
85 Cel
95 Cel

Reverse Pinout

YES

Output Characteristics

3-STATE
OPEN-COLLECTOR
OPEN-DRAIN

Organization

No. of Words Code

Minimum Standby Voltage

2.6 V
2.7 V
3 V
4.5 V

Minimum Operating Temperature

-10 Cel
-20 Cel
-25 Cel
-30 Cel
-40 Cel
-55 Cel
0 Cel
30 Cel

No. of Sectors/Size

8,63

Command User Interface

YES

Terminal Finish

GOLD
MATTE TIN
Matte Tin (Sn)
Matte Tin (Sn) - annealed
NICKEL PALLADIUM GOLD
NICKEL PALLADIUM GOLD SILVER
Nickel/Gold (Ni/Au)
Nickel/Palladium/Gold (Ni/Pd/Au)
PURE TIN
TIN
TIN LEAD
TIN LEAD SILVER
TIN SILVER COPPER
TIN SILVER COPPER NICKEL
TIN/NICKEL PALLADIUM GOLD
Tin (Sn)
Tin/Lead (Sn/Pb)
Tin/Lead (Sn85Pb15)
Tin/Silver/Copper (Sn/Ag/Cu)
Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Tin/Silver/Copper (Sn98.5Ag1.0Cu0.5)
Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

I2C Control Byte

1011CCCC

Terminal Position

BOTTOM
DUAL
END
PERPENDICULAR
QUAD
SINGLE
UNSPECIFIED
UPPER
ZIG-ZAG

No. of Ports

1
1, (1 LINE)

Write Protection

SOFTWARE

JESD-30 Code

Moisture Sensitivity Level (MSL)

1
2
3

Maximum Supply Voltage (Vsup)

1.17 V
1.26 V
1.3 V
1.575 V
1.89 V
1.9 V
1.95 V
1.98 V
10 V
2 V
2.1 V
2.2 V
2.7 V
2.9 V
3 V
3.1 V
3.3 V
3.5 V
3.6 V
3.65 V
5.25 V
5.5 V
6 V
6.4 V

Maximum Seated Height

Endurance

100000 Write/Erase Cycles
1000000 Write/Erase Cycles
2000 Write/Erase Cycles
20000 Write/Erase Cycles

Maximum Clock Frequency (fCLK)

10 MHz
100 MHz
125 MHz
133 MHz
143 MHz
166 MHz
167 MHz
2.5 MHz
20 MHz
200 MHz
2496 MHz
266 MHz
267 MHz
33 MHz
333 MHz
4 MHz
400 MHz
533 MHz
6 MHz
66 MHz
667 MHz
800 MHz
83 MHz
933 MHz

Width

Qualification

Not Qualified
Qualified

Serial Bus Type

I2C

Boot Block

BOTTOM
TOP

Memory Density

Minimum Supply Voltage (Vsup)

1.06 V
1.14 V
1.425 V
1.5 V
1.62 V
1.65 V
1.7 V
1.71 V
1.8 V
1.9 V
2 V
2.2 V
2.3 V
2.4 V
2.5 V
2.6 V
2.67 V
2.7 V
2.8 V
3 V
3.6 V
4.5 V
4.75 V

Additional Features

0.9ms TAA available @400khz and 3ms TAA available @ 100 khz
10 YEAR DATA RETENTION
10 YEAR DATA RETENTION; 1-WIRE SERIAL INTERFACE
4 WIRE INTERFACE TO FLEX 8000 DEVICES
512 MBIT SDRAM
ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM
ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM
ALSO CONTAINS 128K X 16 SRAM
ALSO CONTAINS 128K X 8 SRAM
ALSO CONTAINS 1M X 16 BIT FULL CMOS SRAM
ALSO CONTAINS 256K X 16 BIT FULL CMOS SRAM
ALSO CONTAINS 256K X 16 SRAM
ALSO CONTAINS 2M X 16 BIT UTRAM
ALSO CONTAINS 2M X 16 UTRAM AND 512K X 16 SRAM
ALSO CONTAINS 32K BYTE OF SECONDARY FLASH MEMORY
ALSO CONTAINS 32K X 8 SECONDARY FLASH MEMORY
ALSO CONTAINS 32MBIT PSEUDO SRAM
ALSO CONTAINS 512K X 16 BIT FULL CMOS SRAM
ALSO CONTAINS 512K X 16 SRAM
ALSO CONTAINS 64 BIT LASERED ROM
ALSO CONTAINS 8M SRAM MEMORY
ALSO OPERATES AT 2.6-3.1V, AND 4M X 16 RAM
ALSO ORGANISED AS 128M X 16
ALSO ORGANISED AS 256M X 16
ALSO ORGANISED AS 64M X 16
AUTO/SELF REFRESH
CELLULAR RAM IS ORGANIZED AS 1M X 16
CELLULAR RAM IS ORGANIZED AS 2M X 16
CELLULAR RAM IS ORGANIZED AS 4M X 16
CELLULARRAM IS ORGANIZED AS 1M X 16
CELLULARRAM IS ORGANIZED AS 1M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH
CELLULARRAM IS ORGANIZED AS 2M X 16
CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH
CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH
CELLULARRAM IS ORGANIZED AS 4M X 16
CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH
CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH
CELLULARRAM ORGANISATION IS 2M X 16
CELLULARRAM ORGANISATION IS 4M X 16
CONTAINS 16 MBIT PSRAM, ALSO CONTAINS 64 MBIT FLASH
CONTAINS 16 MBIT SRAM, ALSO CONTAINS 64 MBIT FLASH
CONTAINS 32 MBIT SRAM, ALSO CONTAINS 64 MBIT FLASH
CONTAINS 512K X 16 BIT SRAM
DATA RETENTION > 10 YEARS
DRAM DENSITY IS 16G BITS
DRAM IS CONFIGURED AS 4 K X 1
DRAM IS ORGANISED AS 128M X 16, IT ALSO REQUIRES 1.8 V NOMINAL SUPPLY VOLTAGE
DRAM IS ORGANISED AS 16M X 16
DRAM IS ORGANISED AS 32G X 1
DRAM IS ORGANISED AS 8M X 16
EEPROM
FLASH IS ALSO ORGANIZED AS 8M X 16, PSRAM IS ORGANIZED AS 1M X 16 OR 2M X 16
FLASH IS ALSO ORGANIZED AS 8M X 16, PSRAM IS ORGANIZED AS 2M X 16 OR 4M X 16
FLASH IS ORGANISED AS 256M X 1
FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 1M X 8/512K X 16 SRAM
FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM
FLASH MEMORY IS ORGANISED AS 4M X 64
HYPER RAM IS ORGANISED AS 8MX8
IT ALSO CONTAINS 128MBIT(8MBIT X 16) PSRAM
IT ALSO CONTAINS 16MBIT(1MBIT X 16) PSRAM
IT ALSO CONTAINS 1M X 8/512K X 16 SRAM
IT ALSO CONTAINS 2M X 16 UTRAM
IT ALSO CONTAINS 32MBIT(2MBIT X 16) PSRAM
IT ALSO CONTAINS 512MBIT(32MBIT X 16) LPSDRAM
IT ALSO CONTAINS 512MBIT(32MBIT X 16) MOBILE LPDDR
IT ALSO CONTAINS 64MBIT(4MBIT X 16) PSRAM
IT ALSO HAVING 16-MBIT PSRAM
IT ALSO HAVING 32-MBIT PSRAM
IT ALSO OPERATES AT LOGIC OPERATING TEMPERATURE 0 TO 110 DEG CENTIGRADE
IT ALSO OPERATES AT SUPPLY VOLTAGE 1.7 TO 1.95 V; ALSO ORGANISED AS 256M X 16
IT ALSO OPERATES AT SUPPLY VOLTAGE 1.7 TO 1.95 V; ALSO ORGANISED AS 512M X 16
IT ALSO REQUIRES 3 TO 5.5V SUPPLY
IT IS ALSO HAVING 2GBIT (X 32) LPDDR
IT IS ALSO HAVING 4GBIT (X 32) LPDDR
ITS ALSO CONTAINS 4GBIT (256MBIT X16) NAND FLASH
LPDRAM IS ORGANISED AS 32M X 16
LPSDRAM IS ORGANISED AS 16M X 16
LPSDRAM IS ORGANISED AS 16M X 32
LPSDRAM IS ORGANISED AS 32M X 16BIT, SYNCHRONOUS BURST MODE ALSO POSSIBLE.
MOBILE LPDDR DEVICE ALSO AVAILABLE
NAND FLASH IS ORGANISED AS 64M X 16
NAND FLASH IS ORGANIZED AS 128M X 8; NAND FLASH OPERATES AT 2.5V TO 2.9V SUPPLY
NAND FLASH IS ORGANIZED AS 64M X 8; NAND FLASH OPERATES AT 2.5V TO 2.9V SUPPLY
NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16
NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 4M X 16
OVER 10 YEARS DATA RETENTION
PSEUDO SRAM IS ORGANIZED AS 128M X 1 BIT
PSEUDO SRAM IS ORGANIZED AS 16M X 16
PSEUDO SRAM IS ORGANIZED AS 256M X 1 BIT
PSEUDO SRAM IS ORGANIZED AS 4M X 16
PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
PSEUDO SRAM IS ORGANIZED AS 64M X 1 BIT
PSEUDO SRAM IS ORGANIZED AS 8M X 16
PSEUDO STATIC RAM IS ORGANISED AS 2M X 16
PSEUDO STATIC RAM IS ORGANIZED AS 1M X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8
PSEUDO STATIC RAM IS ORGANIZED AS 2M X 16; FLASH MEMORY IS ALSO ORGANIZED AS 8M X 8
PSRAM ALSO ORGANIZED AS 4M X 16
PSRAM DIE DENSITY-128 MBIT
PSRAM DIE DENSITY-256 MBIT
PSRAM IS ORGANISED AS 128 MB(8 MB X 16-BIT)
PSRAM IS ORGANISED AS 64 MB(4 MB X 16-BIT)
PSRAM IS ORGANISED AS 8M X 16
PSRAM IS ORGANISED AS 8M X 16BIT
PSRAM IS ORGANIZED AS 1M X 16
PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE
PSRAM IS ORGANIZED AS 256K X 16
PSRAM IS ORGANIZED AS 2M X 16
PSRAM IS ORGANIZED AS 4M X 16
PSRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
PSRAM IS ORGANIZED AS 512K X 16
PSRAM IS ORGANIZED AS 8M X 16
PSRAM ORGANISED AS 32M X 1
SDRAM IS ORGANIZED AS 2M X 16 X 4 BANKS
SDRAM IS ORGANIZED AS 2M X 16 X 4 BANKS; UTRAM IS ORGANIZED AS 2M X 16
SDRAM IS ORGANIZED AS 2M X 16 X 4 BANKS; UTRAM IS ORGANIZED AS 4M X 16
SDRAM IS ORGANIZED AS 4M X 16 X 4 BANKS; NAND FLASH SUPPLY 1.7 V TO 1.95 V
SDRAM IS ORGANIZED AS 4M X 16 X 4 BANKS; NAND FLASH SUPPLY 2.4 V TO 2.9 V
SDRAM IS ORGANIZED AS 4M X 16 X 4 BANKS; NAND FLASH SUPPLY 2.7 V TO 3.3 V
SDRAM IS ORGANIZED AS 4M X 8 X 4 BANKS; NAND FLASH SUPPLY 1.7 V TO 1.95 V
SDRAM IS ORGANIZED AS 8M X 8 X 4 BANKS
SRAM CONFIGURATION IS 256K X 16
SRAM IS CONFIGURED AS 128 K X 8
SRAM IS CONFIGURED AS 256 K X 8
SRAM IS CONFIGURED AS 32 K X 8
SRAM IS CONFIGURED AS 64 K X 8
SRAM IS ORGANISED AS 128K X 16
SRAM IS ORGANISED AS 128K X 32