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2DB1132R-13 — Diodes Incorporated | Vyrian

Home/Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Diodes Incorporated/2DB1132R-13

2DB1132R-13 by Diodes Incorporated

Single Bipolar Transistors

2DB1132R-13

Lifecycle unverifiedRoHS / REACH on request

Manufacturer: Diodes Incorporated
Manufacturer part number: 2DB1132R-13
Category: Single Bipolar Transistors
Datasheet: Manufacturer documentation
Description: TRANS PNP 32V 1A SOT-89-3

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Manufacturer data

Technical details

Use this summary for discovery only. Confirm all design-critical values against current manufacturer-controlled documentation.

Physical

Case/Package: TO-243AA
Mount: Surface Mount
Supplier Device Package: SOT-89-3

Technical

Current - Collector (Ic) (Max): 1 A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
Frequency - Transition: 190MHz
Grade: -
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1 W
Product Status: Active
Qualification: -
Series: -
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 32 V

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