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2N7002E-7-F-W — Diodes Incorporated | Vyrian

Home/Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diodes Incorporated/2N7002E-7-F-W

2N7002E-7-F-W by Diodes Incorporated

Single FETs, MOSFETs

2N7002E-7-F-W

Lifecycle unverifiedRoHS / REACH on request

Manufacturer: Diodes Incorporated
Manufacturer part number: 2N7002E-7-F-W
Category: Single FETs, MOSFETs
Datasheet: Manufacturer documentation
Description: MOSFET N-CH 60V 250MA SOT23-3

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Manufacturer data

Technical details

Use this summary for discovery only. Confirm all design-critical values against current manufacturer-controlled documentation.

Physical

Case/Package: TO-236-3, SC-59, SOT-23-3
Mount: Surface Mount
Supplier Device Package: SOT-23-3

Technical

Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 0.22 nC @ 4.5 V
Grade: -
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 370mW (Ta)
Product Status: Active
Qualification: -
Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V
Series: -
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA

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