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DMN10H220LVT-7 — Diodes Incorporated | Vyrian

Home/Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diodes Incorporated/DMN10H220LVT-7

DMN10H220LVT-7 by Diodes Incorporated

Single FETs, MOSFETs

DMN10H220LVT-7

Lifecycle unverifiedRoHS / REACH on request

Manufacturer: Diodes Incorporated
Manufacturer part number: DMN10H220LVT-7
Category: Single FETs, MOSFETs
Datasheet: Manufacturer documentation
Description: MOSFET N-CH 100V 1.87A TSOT26

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Manufacturer data

Technical details

Use this summary for discovery only. Confirm all design-critical values against current manufacturer-controlled documentation.

Physical

Case/Package: SOT-23-6 Thin, TSOT-23-6
Mount: Surface Mount
Supplier Device Package: TSOT-26

Technical

Current - Continuous Drain (Id) @ 25°C: 1.87A (Ta)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Grade: -
Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.67W (Ta)
Product Status: Active
Qualification: -
Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
Series: -
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±16V
Vgs(th) (Max) @ Id: 2.5V @ 250µA

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