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DMN2011UFDF-13 — Diodes Incorporated | Vyrian

Home/Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diodes Incorporated/DMN2011UFDF-13

DMN2011UFDF-13 by Diodes Incorporated

Single FETs, MOSFETs

DMN2011UFDF-13

Lifecycle unverifiedRoHS / REACH on request

Manufacturer: Diodes Incorporated
Manufacturer part number: DMN2011UFDF-13
Category: Single FETs, MOSFETs
Datasheet: Manufacturer documentation
Description: MOSFET N-CH 20V 14.2A 6UDFN

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Manufacturer data

Technical details

Use this summary for discovery only. Confirm all design-critical values against current manufacturer-controlled documentation.

Physical

Case/Package: 6-UDFN Exposed Pad
Mount: Surface Mount
Supplier Device Package: U-DFN2020-6 (Type F)

Technical

Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta)
Drain to Source Voltage (Vdss): 20 V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Grade: -
Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.1W (Ta)
Product Status: Active
Qualification: -
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V
Series: -
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±12V
Vgs(th) (Max) @ Id: 1V @ 250µA

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