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DMT47M2SFVWQ-7 — Diodes Incorporated | Vyrian

Home/Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diodes Incorporated/DMT47M2SFVWQ-7

DMT47M2SFVWQ-7 by Diodes Incorporated

Single FETs, MOSFETs

DMT47M2SFVWQ-7

Lifecycle unverifiedRoHS / REACH on request

Manufacturer: Diodes Incorporated
Manufacturer part number: DMT47M2SFVWQ-7
Category: Single FETs, MOSFETs
Datasheet: Manufacturer documentation
Description: MOSFET N-CH 40V PWRDI3333

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Manufacturer data

Technical details

Use this summary for discovery only. Confirm all design-critical values against current manufacturer-controlled documentation.

Physical

Case/Package: 8-PowerVDFN
Mount: Surface Mount, Wettable Flank
Supplier Device Package: PowerDI3333-8 (SWP) Type UX

Technical

Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 49.1A (Tc)
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.67W (Ta), 27.1W (Tc)
Product Status: Active
Qualification: AEC-Q101
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Series: -
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA

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