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DMTH10H032LPSWQ-13 — Diodes Incorporated | Vyrian

Home/Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diodes Incorporated/DMTH10H032LPSWQ-13

DMTH10H032LPSWQ-13 by Diodes Incorporated

Single FETs, MOSFETs

DMTH10H032LPSWQ-13

Lifecycle unverifiedRoHS / REACH on request

Manufacturer: Diodes Incorporated
Manufacturer part number: DMTH10H032LPSWQ-13
Category: Single FETs, MOSFETs
Datasheet: Manufacturer documentation
Description: MOSFET BVDSS: 61V~100V POWERDI50

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Manufacturer data

Technical details

Use this summary for discovery only. Confirm all design-critical values against current manufacturer-controlled documentation.

Physical

Case/Package: 8-PowerTDFN
Mount: Surface Mount, Wettable Flank
Supplier Device Package: PowerDI5060-8 (Type UX)

Technical

Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.4W (Ta), 68W (Tc)
Product Status: Active
Qualification: AEC-Q101
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Series: -
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA

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