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ZVN4206GTC — Diodes Incorporated | Vyrian

Home/Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diodes Incorporated/ZVN4206GTC

ZVN4206GTC by Diodes Incorporated

Single FETs, MOSFETs

ZVN4206GTC

Lifecycle unverifiedRoHS / REACH on request

Manufacturer: Diodes Incorporated
Manufacturer part number: ZVN4206GTC
Category: Single FETs, MOSFETs
Datasheet: Manufacturer documentation
Description: MOSFET N-CH 60V 1A SOT223

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Manufacturer data

Technical details

Use this summary for discovery only. Confirm all design-critical values against current manufacturer-controlled documentation.

Physical

Case/Package: TO-261-4, TO-261AA
Mount: Surface Mount
Supplier Device Package: SOT-223-3

Technical

Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: -
Grade: -
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
Product Status: Active
Qualification: -
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Series: -
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3V @ 1mA

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