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DIF120SIC022 — Diotec Semiconductor | Vyrian

Home/Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diotec Semiconductor/DIF120SIC022

Diotec SemiconductorDIF120SIC022

Single FETs, MOSFETs

DIF120SIC022

Lifecycle unverifiedRoHS / REACH on request

Manufacturer: Diotec Semiconductor
Manufacturer part number: DIF120SIC022
Category: Single FETs, MOSFETs
Datasheet: Manufacturer documentation
Description: SICFET N-CH 1200V 120A TO-247-4

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Manufacturer data

Technical details

Use this summary for discovery only. Confirm all design-critical values against current manufacturer-controlled documentation.

Physical

Case/Package: TO-247-4
Mount: Through Hole
Supplier Device Package: TO-247-4

Technical

Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 1200 V
Drive Voltage (Max Rds On, Min Rds On): 18V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 18 V
Grade: -
Input Capacitance (Ciss) (Max) @ Vds: 4817 pF @ 1000 V
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 340W (Tc)
Product Status: Active
Qualification: -
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 18V
Series: -
Technology: SiCFET (Silicon Carbide)
Vgs (Max): +18V, -4V
Vgs(th) (Max) @ Id: 4V @ 23.5mA

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