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EPC7003ASH — EPC Space, LLC | Vyrian

Home/Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/EPC Space, LLC/EPC7003ASH

EPC Space, LLCEPC7003ASH

Single FETs, MOSFETs

EPC7003ASH

Lifecycle unverifiedRoHS / REACH on request

Manufacturer: EPC Space, LLC
Manufacturer part number: EPC7003ASH
Category: Single FETs, MOSFETs
Datasheet: Manufacturer documentation
Description: GANFET N-CH 100V 10A 4FSMD-A

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Technical review No cart or checkout

Manufacturer data

Technical details

Use this summary for discovery only. Confirm all design-critical values against current manufacturer-controlled documentation.

Physical

Case/Package: 4-SMD, No Lead
Mount: Surface Mount
Supplier Device Package: FSMD-A

Technical

Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 5V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Grade: -
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 50 V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): -
Product Status: Active
Qualification: -
Rds On (Max) @ Id, Vgs: 58mOhm @ 10A, 5V
Technology: GaNFET (Gallium Nitride)
Vgs (Max): +6V, -4V
Vgs(th) (Max) @ Id: 2.5V @ 2mA

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