4N60F

Manufacturer data

Technical details

Use this summary for discovery only. Confirm all design-critical values against current manufacturer-controlled documentation.

Physical

Case/Package: TO-220-3 Full Pack
Mount: Through Hole
Supplier Device Package: TO-220F

Technical

Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Grade: -
Input Capacitance (Ciss) (Max) @ Vds: 462 pF @ 25 V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 30W (Tc)
Product Status: Active
Qualification: -
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.5A, 10V
Series: -
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 250µA

Sourcing

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