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2301 — Goford Semiconductor | Vyrian

Home/Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Goford Semiconductor/2301

Goford Semiconductor2301

Single FETs, MOSFETs

2301

Lifecycle unverifiedRoHS / REACH on request

Manufacturer: Goford Semiconductor
Manufacturer part number: 2301
Category: Single FETs, MOSFETs
Datasheet: Manufacturer documentation
Description: P20V,RD(MAX)<[email protected],RD(MAX)<8

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Manufacturer data

Technical details

Use this summary for discovery only. Confirm all design-critical values against current manufacturer-controlled documentation.

Physical

Case/Package: TO-236-3, SC-59, SOT-23-3
Mount: Surface Mount
Supplier Device Package: SOT-23-3

Technical

Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 20 V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 2.5 V
Grade: -
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Tc)
Product Status: Active
Qualification: -
Rds On (Max) @ Id, Vgs: 56mOhm @ 1.7A, 4.5V
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±12V
Vgs(th) (Max) @ Id: 900mV @ 250µA

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