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G08N03D2 — Goford Semiconductor | Vyrian

Home/Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Goford Semiconductor/G08N03D2

Goford SemiconductorG08N03D2

Single FETs, MOSFETs

G08N03D2

Lifecycle unverifiedRoHS / REACH on request

Manufacturer: Goford Semiconductor
Manufacturer part number: G08N03D2
Category: Single FETs, MOSFETs
Datasheet: Manufacturer documentation
Description: N30V,8A,RD<20M@10V,VTH1.0V~2.0V,

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Manufacturer data

Technical details

Use this summary for discovery only. Confirm all design-critical values against current manufacturer-controlled documentation.

Physical

Case/Package: 6-WDFN Exposed Pad
Mount: Surface Mount
Supplier Device Package: 6-DFN (2x2)

Technical

Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Grade: -
Input Capacitance (Ciss) (Max) @ Vds: 681 pF @ 15 V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 17W (Tc)
Product Status: Active
Qualification: -
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Series: -
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 250µA

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