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G110N06T — Goford Semiconductor | Vyrian

Home/Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Goford Semiconductor/G110N06T

G110N06T by Goford Semiconductor

Single FETs, MOSFETs

G110N06T

Lifecycle unverifiedRoHS / REACH on request

Manufacturer: Goford Semiconductor
Manufacturer part number: G110N06T
Category: Single FETs, MOSFETs
Datasheet: Manufacturer documentation
Description: N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.

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Manufacturer data

Technical details

Use this summary for discovery only. Confirm all design-critical values against current manufacturer-controlled documentation.

Physical

Case/Package: TO-220-3
Mount: Through Hole
Supplier Device Package: TO-220

Technical

Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Grade: -
Input Capacitance (Ciss) (Max) @ Vds: 6512 pF @ 25 V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 160W (Tc)
Product Status: Active
Qualification: -
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA

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