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G11S — Goford Semiconductor | Vyrian

Home/Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Goford Semiconductor/G11S

Goford SemiconductorG11S

Single FETs, MOSFETs

G11S

Lifecycle unverifiedRoHS / REACH on request

Manufacturer: Goford Semiconductor
Manufacturer part number: G11S
Category: Single FETs, MOSFETs
Datasheet: Manufacturer documentation
Description: P-20V,RD(MAX)<[email protected],RD(MAX

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Manufacturer data

Technical details

Use this summary for discovery only. Confirm all design-critical values against current manufacturer-controlled documentation.

Physical

Case/Package: 8-SOIC (0.154", 3.90mm Width)
Mount: Surface Mount
Supplier Device Package: 8-SOP

Technical

Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 20 V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Grade: -
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.3W (Tc)
Product Status: Active
Qualification: -
Rds On (Max) @ Id, Vgs: 18.4mOhm @ 1A, 4.5V
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±12V
Vgs(th) (Max) @ Id: 1.1V @ 250µA

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