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G35N02S — Goford Semiconductor | Vyrian

Home/Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Goford Semiconductor/G35N02S

Goford SemiconductorG35N02S

Single FETs, MOSFETs

G35N02S

Lifecycle unverifiedRoHS / REACH on request

Manufacturer: Goford Semiconductor
Manufacturer part number: G35N02S
Category: Single FETs, MOSFETs
Datasheet: Manufacturer documentation
Description: MOSFET,N-CH,20V,12A,2.6W,SOP-8

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Manufacturer data

Technical details

Use this summary for discovery only. Confirm all design-critical values against current manufacturer-controlled documentation.

Physical

Case/Package: 8-SOIC (0.154", 3.90mm Width)
Mount: Surface Mount
Supplier Device Package: 8-SOP

Technical

Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 2.5V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Grade: -
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.6W (Tc)
Product Status: Active
Qualification: -
Rds On (Max) @ Id, Vgs: 9mOhm @ 5A, 4.5V
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±12V
Vgs(th) (Max) @ Id: 1.2V @ 250µA

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