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G800N06H — Goford Semiconductor | Vyrian

Home/Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Goford Semiconductor/G800N06H

Goford SemiconductorG800N06H

Single FETs, MOSFETs

G800N06H

Lifecycle unverifiedRoHS / REACH on request

Manufacturer: Goford Semiconductor
Manufacturer part number: G800N06H
Category: Single FETs, MOSFETs
Datasheet: Manufacturer documentation
Description: N60V, 3A,RD<80M@10V,VTH0.7V~1.2V

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Manufacturer data

Technical details

Use this summary for discovery only. Confirm all design-critical values against current manufacturer-controlled documentation.

Physical

Case/Package: TO-261-4, TO-261AA
Mount: Surface Mount
Supplier Device Package: SOT-223

Technical

Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Grade: -
Input Capacitance (Ciss) (Max) @ Vds: 457 pF @ 30 V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.2W (Tc)
Product Status: Active
Qualification: -
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 1.2V @ 250µA

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