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GC210N80FE — Goford Semiconductor | Vyrian

Home/Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Goford Semiconductor/GC210N80FE

Goford SemiconductorGC210N80FE

Single FETs, MOSFETs

GC210N80FE

Lifecycle unverifiedRoHS / REACH on request

Manufacturer: Goford Semiconductor
Manufacturer part number: GC210N80FE
Category: Single FETs, MOSFETs
Datasheet: Manufacturer documentation
Description: MOSFET,N-CH,800V,17A,51W,TO-220F

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Manufacturer data

Technical details

Use this summary for discovery only. Confirm all design-critical values against current manufacturer-controlled documentation.

Physical

Case/Package: TO-220-3 Full Pack
Mount: Through Hole
Supplier Device Package: TO-220F

Technical

Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 800 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Grade: -
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 380 V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 51W
Product Status: Active
Qualification: -
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.5A, 10V
Series: -
Technology: MOSFET (Metal Oxide)
Vgs (Max): -
Vgs(th) (Max) @ Id: -

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