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GT110N06SH — Goford Semiconductor | Vyrian

Home/Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Goford Semiconductor/GT110N06SH

Goford SemiconductorGT110N06SH

Single FETs, MOSFETs

GT110N06SH

Lifecycle unverifiedRoHS / REACH on request

Manufacturer: Goford Semiconductor
Manufacturer part number: GT110N06SH
Category: Single FETs, MOSFETs
Datasheet: Manufacturer documentation
Description: MOSFET N-CH 60V 12A 3W SOP-8

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Technical review No cart or checkout

Manufacturer data

Technical details

Use this summary for discovery only. Confirm all design-critical values against current manufacturer-controlled documentation.

Physical

Case/Package: 8-SOIC (0.154", 3.90mm Width)
Mount: Surface Mount
Supplier Device Package: 8-SOP

Technical

Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Grade: -
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Tc)
Product Status: Active
Qualification: -
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 8A, 10V
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA

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