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GT1K2N10H — Goford Semiconductor | Vyrian

Home/Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Goford Semiconductor/GT1K2N10H

Goford SemiconductorGT1K2N10H

Single FETs, MOSFETs

GT1K2N10H

Lifecycle unverifiedRoHS / REACH on request

Manufacturer: Goford Semiconductor
Manufacturer part number: GT1K2N10H
Category: Single FETs, MOSFETs
Datasheet: Manufacturer documentation
Description: MOSFET,N-CH,100V,4.5A,2W,SOT-223

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Manufacturer data

Technical details

Use this summary for discovery only. Confirm all design-critical values against current manufacturer-controlled documentation.

Physical

Case/Package: TO-261-4, TO-261AA
Mount: Surface Mount
Supplier Device Package: SOT-223

Technical

Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): -
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 10 V
Grade: -
Input Capacitance (Ciss) (Max) @ Vds: 145 pF @ 50 V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Tc)
Product Status: Active
Qualification: -
Rds On (Max) @ Id, Vgs: -
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.2V @ 250µA

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