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2N7002KDW_R1_00001 — Panjit International Inc. | Vyrian

Home/Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Panjit International Inc./2N7002KDW_R1_00001

Panjit International Inc.2N7002KDW_R1_00001

FET, MOSFET Arrays

2N7002KDW_R1_00001

Lifecycle unverifiedRoHS / REACH on request

Manufacturer: Panjit International Inc.
Manufacturer part number: 2N7002KDW_R1_00001
Category: FET, MOSFET Arrays
Datasheet: Manufacturer documentation
Description: MOSFET 2N-CH 60V 0.115A SOT363

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Manufacturer data

Technical details

Use this summary for discovery only. Confirm all design-critical values against current manufacturer-controlled documentation.

Physical

Case/Package: 6-TSSOP, SC-88, SOT-363
Mount: Surface Mount
Supplier Device Package: SOT-363

Technical

Configuration: 2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Drain to Source Voltage (Vdss): 60V
FET Feature: -
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Grade: -
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW (Ta)
Product Status: Active
Qualification: -
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Series: -
Technology: MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id: 2.5V @ 250µA

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