- Current - Continuous Drain (Id) @ 25°C
- 4.1A (Ta)
- Drain to Source Voltage (Vdss)
- 20 V
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- FET Feature
- -
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 4.6 nC @ 4.5 V
- Grade
- Automotive
- Input Capacitance (Ciss) (Max) @ Vds
- 350 pF @ 10 V
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Power Dissipation (Max)
- 1.25W (Ta)
- Product Status
- Not For New Designs
- Qualification
- AEC-Q101
- Rds On (Max) @ Id, Vgs
- 56mOhm @ 4.1A, 4.5V
- Series
- -
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±12V
- Vgs(th) (Max) @ Id
- 1.2V @ 250µA
