- Current - Continuous Drain (Id) @ 25°C
- 19A (Ta), 80A (Tc)
- Drain to Source Voltage (Vdss)
- 30 V
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- FET Feature
- -
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 21 nC @ 10 V
- Grade
- Automotive
- Input Capacitance (Ciss) (Max) @ Vds
- 1260 pF @ 25 V
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Power Dissipation (Max)
- 2.5W (Ta), 45.5W (Tc)
- Product Status
- Active
- Qualification
- AEC-Q101
- Rds On (Max) @ Id, Vgs
- 4.4mOhm @ 10A, 10V
- Series
- -
- Technology
- MOSFET (Metal Oxide)
- Vgs (Max)
- ±20V
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
