For decades, the electronic and technology industries have depended on silicon as the primary semiconductor chip used in their productions. But recently, this chip has been scarce because its demand is more significant than its supply.

Many experts even predicted that it would take a long time before these industries could recover from the scarcity of silicon. However, many companies are now using Gallium Nitride(GaN). GaN is smaller, more efficient, and eco-friendly than silicons. It is also faster and easier to make.

GaN semiconductors are better suited in gadgets used in more complicated environments because they can survive higher temperatures. GaN is creating an innovative change and ripple effect in the electronic and technology world. And even though silicon chips are a vital part of gadgets that turn energy into power, it is slowly but surely being replaced by GaN.

What is GaN Semiconductor Technology, And Why is it so Important?

GaN is made of Gallium with an atomic number of 31 and Nitrogen with an atomic number of 7. GaN is a binary wide bandgap semiconductor. It is more compatible with transistors with very high power and temperature. GaN is also used in lasers, semiconductor power gadgets, etc. Though GaN has been used since the 1990s, it was enhanced in 2006, allowing GaN transistors and silicon to be produced in factories with the same process. The only difference is GaN is cost-effective and has better performance than silicon.

All semiconductors have a bandgap, but they are always different. Bandgap determines how well a semiconductor can conduct electricity. For example, GaN’s bandgap is 3.4eV while Silicon’s own is 1.2eV.

This difference in bandgap means that GaN transistors can carry higher temperatures and voltages than transistors made from silicon. It also means when silicon transistors reach their limit, GaN transistors are just getting started. This makes GaN better suited for devices with high frequencies and power.

Although they are smaller in shape than silicon transistors, GaN transistors can conveniently handle more expansive electric fields than silicon while having faster and better switching.

GaN technology is becoming popular because they offer better output and performance. In addition, GaN technology reduces the space and human resources needed to provide output and performance. They can also be used in a variety of products.

It is estimated that by 2030, A Silicon to GaN data center upgrade will reduce the loss of energy by 30% to 40%. This translates to saving over 125Mtons and 100TWhr of CO2 emission. This will be possible because GaN semiconductors have a 10x carbon footprint than silicon chips.

In addition, as GaN technology improves, it will become more cost-effective and has better performance than silicon. As a result, there is a high possibility that GaN transistors will displace silicon transistors in the future.

Advantages of GaN Semiconductor Technology

GaN semiconductors have several advantages over their other counterpart, silicon semiconductors. Below are some of the advantages:

• GaN semiconductors have higher frequencies and temperatures than silicon. As a result, they cool faster, reduce magnetics, and quickly convert to air cooling from liquid cooling.
• GaN semiconductors are more cost-effective than silicon. They also reduce energy costs which mean fewer material costs and sizes.
• They have higher switching frequencies. This is because GaN semiconductors use smaller capacitors and inductors in their power circuits. This ensures their frequency becomes 10x the inductance and capacitance, implying a significant reduction in volume, cost, and weight. It also means that they can sustain larger electric fields.

How Do GaN Semiconductor Technology Work?

GaN semiconductors are used in integrated circuits and power transistors to achieve high efficiency. A thin layer of Aluminium Gallium Nitride is grown on top of a Gallium Nitride(GaN) crystal. A strain that produces a 2DEG (Two-dimensional Electron Gas) is created at the interface.

When an electric field is introduced, this highly conductive 2DEG is used to conduct electrons efficiently. The 2DEG is highly conductive because the electrons are confined to a small space at the interface.

This leads to the electrons increasing their mobility from around 1000cm^2/Vs to between 1500 and 2000cm^2/Vs. And because of the electrons’ high mobility, GaN integrated circuits and transistors have better strength, thermal conductivity, resistance, and faster switching momentum.

GaN RF devices are being used for better transmission in laptops, phones, and Wi-Fi. GaN is also used in adapters and chargers to power them. Its semiconductors are also being used in data server centers. They are being widely used in different applications. This shows how flexible and dynamic they are.

Final Thoughts

GaN is the next-generation semiconductor. And with the increased performance and potential ability of GaN in integrated circuits and transistors, technology companies should pay more attention to it.
GaN semiconductors have faster switching, which reduces switching losses. They also don’t need much power to drive the circuit. They operate at higher temperatures and frequencies compared to silicon chips. Without any doubt, GaN semiconductors are the next game-changer in the technology and electronic industries.