| Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Onsemi |
RECTIFIER DIODE |
DUAL |
FLAT |
8 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
6 A |
.68 V |
SCHOTTKY |
50 uA |
1 |
100 V |
SMALL OUTLINE |
100 V |
175 Cel |
GENERAL PURPOSE |
-55 Cel |
MATTE TIN |
S-PDSO-F8 |
1 |
CATHODE |
FREE WHEELING DIODE |
1 |
100 V |
150 A |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||||
|
|
Infineon Technologies |
RECTIFIER DIODE |
SINGLE |
NO LEAD |
4 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
1.7 V |
SCHOTTKY |
70 uA |
1 |
SMALL OUTLINE |
650 V |
150 Cel |
EFFICIENCY |
-55 Cel |
TIN |
S-PSSO-N4 |
CATHODE |
62 W |
HIGH RELIABILITY, PD-CASE |
1 |
21 A |
e3 |
SILICON CARBIDE |
|||||||||||||||||||||||||||
|
|
Infineon Technologies |
RECTIFIER DIODE |
SINGLE |
NO LEAD |
4 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
1.7 V |
SCHOTTKY |
110 uA |
1 |
SMALL OUTLINE |
650 V |
150 Cel |
EFFICIENCY |
-55 Cel |
TIN |
S-PSSO-N4 |
CATHODE |
78 W |
HIGH RELIABILITY, PD-CASE |
1 |
29 A |
e3 |
SILICON CARBIDE |
|||||||||||||||||||||||||||
|
|
Infineon Technologies |
RECTIFIER DIODE |
SINGLE |
NO LEAD |
4 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
1.7 V |
SCHOTTKY |
140 uA |
1 |
SMALL OUTLINE |
650 V |
150 Cel |
EFFICIENCY |
-55 Cel |
TIN |
S-PSSO-N4 |
CATHODE |
96 W |
HIGH RELIABILITY, PD-CASE |
1 |
36 A |
e3 |
SILICON CARBIDE |
|||||||||||||||||||||||||||
|
|
Infineon Technologies |
RECTIFIER DIODE |
SINGLE |
NO LEAD |
4 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
1.7 V |
SCHOTTKY |
190 uA |
1 |
SMALL OUTLINE |
650 V |
150 Cel |
EFFICIENCY |
-55 Cel |
TIN |
S-PSSO-N4 |
CATHODE |
138 W |
HIGH RELIABILITY, PD-CASE |
1 |
50 A |
e3 |
SILICON CARBIDE |
|||||||||||||||||||||||||||
|
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
4 A |
.5 V |
AVALANCHE |
200 uA |
1 |
CHIP CARRIER |
10 V |
200 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
S-PBCC-N2 |
CATHODE |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
35 A |
e3 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||
|
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
4 A |
.47 V |
AVALANCHE |
100 uA |
1 |
CHIP CARRIER |
15 V |
200 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
S-PBCC-N2 |
CATHODE |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
35 A |
e3 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||
|
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
4 A |
.52 V |
AVALANCHE |
100 uA |
1 |
CHIP CARRIER |
45 V |
200 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
S-PBCC-N2 |
CATHODE |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
45 A |
e3 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||
|
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
NO LEAD |
5 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
6 A |
.45 V |
AVALANCHE |
250 uA |
1 |
SMALL OUTLINE |
20 V |
175 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
S-PDSO-N5 |
CATHODE |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
55 A |
e3 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||
|
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
NO LEAD |
5 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
6 A |
.52 V |
AVALANCHE |
150 uA |
1 |
45 V |
SMALL OUTLINE |
45 V |
200 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
S-PDSO-N5 |
CATHODE |
FREE WHEELING DIODE |
1 |
55 A |
e3 |
260 |
SILICON |
|||||||||||||||||||||||||
|
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
12 A |
.52 V |
300 uA |
1 |
FLATPACK |
45 V |
150 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
S-PDFP-F2 |
1 |
300 A |
e3 |
260 |
SILICON |
|||||||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
DUAL |
FLAT |
5 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
5 A |
.68 V |
SCHOTTKY |
50 uA |
1 |
60 V |
SMALL OUTLINE |
60 V |
175 Cel |
EFFICIENCY |
-55 Cel |
Matte Tin (Sn) - annealed |
S-PDSO-F5 |
1 |
CATHODE |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
60 V |
120 A |
e3 |
NOT SPECIFIED |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
15 A |
1.723 V |
SCHOTTKY |
200 uA |
1 |
1230 V |
UNCASED CHIP |
1200 V |
175 Cel |
EFFICIENCY |
S-XUUC-N1 |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON CARBIDE |
||||||||||||||||||||||||||||||
|
|
Nexperia |
RECTIFIER DIODE |
DUAL |
NO LEAD |
3 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
.575 V |
.078 us |
SCHOTTKY |
250 uA |
1 |
SMALL OUTLINE |
60 V |
150 Cel |
EFFICIENCY |
-55 Cel |
TIN |
S-PDSO-N3 |
1 |
CATHODE |
.52 W |
1 |
18 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
RECTIFIER DIODE |
SINGLE |
NO LEAD |
4 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
1.7 V |
SCHOTTKY |
180 uA |
1 |
SMALL OUTLINE |
650 V |
150 Cel |
EFFICIENCY |
-55 Cel |
TIN |
S-PSSO-N4 |
3 |
CATHODE |
113 W |
HIGH RELIABILITY, PD-CASE |
1 |
43 A |
e3 |
SILICON CARBIDE |
||||||||||||||||||||||||||
|
|
Infineon Technologies |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
27 uA |
1 |
UNCASED CHIP |
1200 V |
175 Cel |
FAST SOFT RECOVERY |
-40 Cel |
S-XUUC-N1 |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||||
|
|
Infineon Technologies |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
27 uA |
1 |
UNCASED CHIP |
1200 V |
175 Cel |
FAST SOFT RECOVERY |
-40 Cel |
S-XUUC-N1 |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||||
|
|
Infineon Technologies |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
27 uA |
1 |
UNCASED CHIP |
1200 V |
175 Cel |
FAST SOFT RECOVERY |
-40 Cel |
S-XUUC-N1 |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||||
|
Infineon Technologies |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
10 A |
1.95 V |
27 uA |
1 |
UNCASED CHIP |
600 V |
175 Cel |
FAST SOFT RECOVERY |
-40 Cel |
S-XUUC-N1 |
1 |
SILICON |
||||||||||||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
2.9 V |
1 uA |
1 |
UNCASED CHIP |
650 V |
175 Cel |
FAST RECOVERY |
S-XUUC-N1 |
FREE WHEELING DIODE |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
1.8 V |
1 uA |
1 |
UNCASED CHIP |
1200 V |
175 Cel |
FAST RECOVERY |
S-XUUC-N1 |
FREE WHEELING DIODE |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
1.3 V |
1 uA |
1 |
UNCASED CHIP |
650 V |
175 Cel |
FAST RECOVERY |
S-XUUC-N1 |
FREE WHEELING DIODE |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
2.8 V |
1 uA |
1 |
UNCASED CHIP |
650 V |
175 Cel |
FAST RECOVERY |
S-XUUC-N1 |
FREE WHEELING DIODE |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
UNSPECIFIED |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
1.723 V |
AVALANCHE |
200 uA |
1 |
1230 V |
UNCASED CHIP |
1230 V |
175 Cel |
EFFICIENCY |
S-XXUC-N1 |
HIGH RELIABILITY |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON CARBIDE |
||||||||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
60 A |
1.75 V |
SCHOTTKY |
200 uA |
1 |
650 V |
UNCASED CHIP |
650 V |
175 Cel |
EFFICIENCY |
-55 Cel |
S-XUUC-N1 |
429 W |
1 |
230 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON CARBIDE |
|||||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
20 A |
1.723 V |
SCHOTTKY |
200 uA |
1 |
1230 V |
UNCASED CHIP |
1200 V |
175 Cel |
EFFICIENCY |
S-XUUC-N1 |
HIGH RELIABILITY |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON CARBIDE |
|||||||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
UNSPECIFIED |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
1.723 V |
AVALANCHE |
200 uA |
1 |
1230 V |
UNCASED CHIP |
1230 V |
175 Cel |
EFFICIENCY |
S-XXUC-N1 |
HIGH RELIABILITY |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON CARBIDE |
||||||||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
DUAL |
FLAT |
5 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
5 A |
1 V |
SCHOTTKY |
50 uA |
1 |
SMALL OUTLINE |
100 V |
175 Cel |
EFFICIENCY |
-65 Cel |
Matte Tin (Sn) - annealed |
S-PDSO-F5 |
1 |
CATHODE |
FREE WHEELING DIODE |
1 |
80 A |
e3 |
NOT SPECIFIED |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
DUAL |
FLAT |
5 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
5 A |
1 V |
SCHOTTKY |
50 uA |
1 |
SMALL OUTLINE |
100 V |
175 Cel |
EFFICIENCY |
-65 Cel |
Matte Tin (Sn) - annealed |
S-PDSO-F5 |
1 |
CATHODE |
FREE WHEELING DIODE |
1 |
80 A |
e3 |
NOT SPECIFIED |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
DUAL |
FLAT |
5 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
5 A |
1 V |
SCHOTTKY |
50 uA |
1 |
SMALL OUTLINE |
100 V |
175 Cel |
EFFICIENCY |
-65 Cel |
Matte Tin (Sn) - annealed |
S-PDSO-F5 |
1 |
CATHODE |
FREE WHEELING DIODE |
1 |
80 A |
e3 |
NOT SPECIFIED |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
30 A |
1.75 V |
SCHOTTKY |
200 uA |
1 |
650 V |
UNCASED CHIP |
650 V |
175 Cel |
EFFICIENCY |
S-XUUC-N1 |
HIGH RELIABILITY |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON CARBIDE |
|||||||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
DUAL |
NO LEAD |
8 |
YES |
SQUARE |
PLASTIC/EPOXY |
SINGLE |
5 A |
.68 V |
SCHOTTKY |
50 uA |
1 |
60 V |
SMALL OUTLINE |
60 V |
EFFICIENCY |
-55 Cel |
MATTE TIN |
S-PDSO-F8 |
1 |
CATHODE |
FREE WHEELING DIODE, LOW POWER LOSS |
1 |
60 V |
120 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
61 A |
1.75 V |
SCHOTTKY |
200 uA |
1 |
1200 V |
UNCASED CHIP |
1200 V |
175 Cel |
EFFICIENCY |
-55 Cel |
S-XUUC-N1 |
682 W |
1 |
270 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON CARBIDE |
|||||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
77 A |
1.75 V |
SCHOTTKY |
200 uA |
1 |
1200 V |
UNCASED CHIP |
1200 V |
175 Cel |
EFFICIENCY |
-55 Cel |
S-XUUC-N1 |
736 W |
PD-CASE |
1 |
280 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON CARBIDE |
||||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
20 A |
1.75 V |
SCHOTTKY |
200 uA |
1 |
650 V |
UNCASED CHIP |
650 V |
175 Cel |
EFFICIENCY |
S-XUUC-N1 |
HIGH RELIABILITY |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON CARBIDE |
|||||||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
30 A |
1.75 V |
SCHOTTKY |
200 uA |
1 |
1200 V |
UNCASED CHIP |
1200 V |
175 Cel |
EFFICIENCY |
S-XUUC-N1 |
HIGH RELIABILITY |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON CARBIDE |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.