Other Function Transistors

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

S1236

Toshiba

NPN

SINGLE

NO

10 MHz

40 W

4 A

1

Other Transistors

40

140 Cel

Tin/Lead (Sn/Pb)

e0

TPC8109(TE12L)

Toshiba

P-CHANNEL

SINGLE

YES

1.9 W

ENHANCEMENT MODE

1

10 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

2N5952-D74Z

Fairchild Semiconductor

N-CHANNEL

NO

.35 W

Other Transistors

JUNCTION

150 Cel

Matte Tin (Sn)

e3

DP200

Kodenshi Auk

PNP

SINGLE

NO

.625 W

1 A

1

Other Transistors

40

150 Cel

BC857BF-E6327

Infineon Technologies

PNP

SINGLE

YES

.25 W

.1 A

1

Other Transistors

220

150 Cel

BC860BF-E6327

Infineon Technologies

PNP

SINGLE

YES

.25 W

.1 A

1

Other Transistors

220

150 Cel

BFP405F-E6327

Infineon Technologies

NPN

SINGLE

YES

18000 MHz

.055 W

.012 A

1

Other Transistors

50

150 Cel

1

260

BFP420F-E6327

Infineon Technologies

NPN

SINGLE

YES

18000 MHz

.16 W

.035 A

1

Other Transistors

50

150 Cel

1

260

BFR360L3-E6327

Infineon Technologies

NPN

SINGLE

YES

11000 MHz

.21 W

.035 A

1

Other Transistors

90

150 Cel

BFR360F-E6327

Infineon Technologies

NPN

SINGLE

YES

11000 MHz

.21 W

.035 A

1

Other Transistors

60

150 Cel

1

260

BFR380F-E6327

Infineon Technologies

NPN

SINGLE

YES

11000 MHz

.38 W

.08 A

1

Other Transistors

90

150 Cel

1

260

BFS483-E6327

Infineon Technologies

NPN

YES

6000 MHz

.45 W

.065 A

Other Transistors

50

150 Cel

1

260

BSP61-E6327

Infineon Technologies

PNP

DARLINGTON

YES

1.5 W

1 A

Other Transistors

1000

150 Cel

1

260

BSP60-E6433

Infineon Technologies

PNP

DARLINGTON

YES

1.5 W

1 A

Other Transistors

1000

150 Cel

TIN LEAD

1

e0

235

BSP51-E6327

Infineon Technologies

NPN

DARLINGTON

YES

1.5 W

1 A

Other Transistors

1000

150 Cel

1

260

SMBT3904U-E6327

Infineon Technologies

NPN

YES

300 MHz

.33 W

.2 A

Other Transistors

30

150 Cel

1

260

SMBTA42-E6433

Infineon Technologies

NPN

SINGLE

YES

50 MHz

.36 W

.5 A

1

Other Transistors

25

150 Cel

1

260

SMBTA92-E6433

Infineon Technologies

PNP

SINGLE

YES

50 MHz

.36 W

.5 A

1

Other Transistors

25

150 Cel

1

260

AOD403L

Alpha & Omega Semiconductor

BFR182W-E6327

Infineon Technologies

NPN

SINGLE

YES

6000 MHz

.25 W

.035 A

1

Other Transistors

50

150 Cel

1

260

SI3443DVTRPBF

International Rectifier

P-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

4.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

4.4 A

2

e3

30

260

IRF5810TRPBF

International Rectifier

P-CHANNEL

YES

.96 W

ENHANCEMENT MODE

2.9 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

2.9 A

2

e3

30

260

IRF7751TRPBF

International Rectifier

P-CHANNEL

YES

1 W

ENHANCEMENT MODE

4.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

4.5 A

2

e3

30

260

2N4338-E3

Vishay Intertechnology

N-CHANNEL

NO

.3 W

Other Transistors

JUNCTION

200 Cel

MATTE TIN

1

e3

40

260

2N4339-E3

Vishay Intertechnology

N-CHANNEL

NO

.3 W

Other Transistors

JUNCTION

200 Cel

Matte Tin (Sn)

1

e3

AO6405L

Alpha & Omega Semiconductor

P-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

AOB416

Alpha & Omega Semiconductor

BFN38-E6327

Infineon Technologies

NPN

SINGLE

YES

1.5 W

.2 A

1

Other Transistors

25

150 Cel

1

260

BSP92P-E6327

Infineon Technologies

P-CHANNEL

SINGLE

YES

1.8 W

ENHANCEMENT MODE

1

.26 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.26 A

1

255

BSP315P-E6327

Infineon Technologies

P-CHANNEL

SINGLE

YES

1.8 W

ENHANCEMENT MODE

1

1.17 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.17 A

1

255

BSP317P-E6327

Infineon Technologies

P-CHANNEL

SINGLE

YES

1.8 W

ENHANCEMENT MODE

1

.43 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.43 A

1

255

BSP316P-E6327

Infineon Technologies

P-CHANNEL

SINGLE

YES

1.8 W

ENHANCEMENT MODE

1

.68 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.68 A

1

235

BFR705L3RH-E6327

Infineon Technologies

NPN

SINGLE

YES

.04 W

.01 A

1

Other Transistors

160

150 Cel

1

260

BC818K-25-E6327

Infineon Technologies

NPN

SINGLE

YES

.5 W

.5 A

1

Other Transistors

160

150 Cel

1

260

BC818K-40-E6327

Infineon Technologies

NPN

SINGLE

YES

.5 W

.5 A

1

Other Transistors

250

150 Cel

1

260

BC817K-25W-E6433

Infineon Technologies

NPN

SINGLE

YES

.25 W

.5 A

1

Other Transistors

160

150 Cel

BC856S-E6433

Infineon Technologies

PNP

YES

.25 W

.1 A

Other Transistors

200

150 Cel

BC858BL3-E6327

Infineon Technologies

PNP

SINGLE

YES

.25 W

.1 A

1

Other Transistors

220

150 Cel

1

260

BC847BF-E6327

Infineon Technologies

NPN

SINGLE

YES

.25 W

.1 A

1

Other Transistors

200

150 Cel

BFP540FESD-E6327

Infineon Technologies

NPN

SINGLE

YES

21000 MHz

.25 W

.08 A

1

Other Transistors

50

150 Cel

1

260

AO6804A

Alpha & Omega Semiconductor

2SC4957-A

Renesas Electronics

NPN

SINGLE

YES

.18 W

.03 A

1

Other Transistors

75

150 Cel

2SC4957-T1-A

Renesas Electronics

NPN

SINGLE

YES

.18 W

.03 A

1

Other Transistors

75

150 Cel

NE687M33-A

Renesas Electronics

NPN

SINGLE

YES

10000 MHz

.09 W

.03 A

1

Other Transistors

70

150 Cel

NE687M33-T3-A

Renesas Electronics

NPN

SINGLE

YES

10000 MHz

.09 W

.03 A

1

Other Transistors

70

150 Cel

2SC4227-T1-A

Renesas Electronics

NPN

SINGLE

YES

.15 W

.065 A

1

Other Transistors

40

150 Cel

BD243CTU

Fairchild Semiconductor

NPN

SINGLE

NO

65 W

6 A

1

Other Transistors

15

150 Cel

Matte Tin (Sn)

e3

FDC602P-F095

Fairchild Semiconductor

P-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

5.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5.5 A

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.