Other Function Transistors

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	Sub-Category	Field Effect Transistor Technology	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	Moisture Sensitivity Level (MSL)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
FDN360P-NBGT003B	Fairchild Semiconductor	P-CHANNEL	SINGLE	YES		.5 W		ENHANCEMENT MODE	1	2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	Tin (Sn)	2 A	1	e3	30	260
FQD8P10TM-SB82052	Fairchild Semiconductor	P-CHANNEL	SINGLE	YES		44 W		ENHANCEMENT MODE	1	6.6 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		6.6 A
SP8M3FU6TB	ROHM	N-CHANNEL AND P-CHANNEL		YES		2 W		ENHANCEMENT MODE		5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		5 A
RSS060P05FU6TB	ROHM	P-CHANNEL	SINGLE	YES		2 W		ENHANCEMENT MODE	1	6 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		6 A	1		10	260
AON7401L	Alpha & Omega Semiconductor
AON7403L	Alpha & Omega Semiconductor
BFG520,235	NXP Semiconductors	NPN	SINGLE	YES		.3 W	.07 A		1		Other Transistors		60	175 Cel	TIN		1	e3	30	260
BFG520/X,235	NXP Semiconductors	NPN	SINGLE	YES		.3 W	.07 A		1		Other Transistors		60	175 Cel			1			260
BFG520/XR,235	NXP Semiconductors	NPN	SINGLE	YES		.3 W	.07 A		1		Other Transistors		60	175 Cel			1			260
NE856M02-T1-AZ	Renesas Electronics	NPN	SINGLE	YES		1.2 W	.1 A		1		Other Transistors		50	150 Cel
NE856M03-A	Renesas Electronics	NPN	SINGLE	YES	3000 MHz	.125 W	.1 A		1		Other Transistors		80	150 Cel
NE685M03-A	Renesas Electronics	NPN	SINGLE	YES		.125 W	.03 A		1		Other Transistors		75	150 Cel
NE685M03-T1-A	Renesas Electronics	NPN	SINGLE	YES		.125 W	.03 A		1		Other Transistors		75	150 Cel
NE461M02-T1-AZ	Renesas Electronics	NPN	SINGLE	YES		2 W	.25 A		1		Other Transistors		40	150 Cel
NE58219-T1-A	Renesas Electronics	NPN	SINGLE	YES	3000 MHz	.1 W	.06 A		1		Other Transistors		60	125 Cel
NE696M01-T1-A	Renesas Electronics	NPN	SINGLE	YES		.15 W	.03 A		1		Other Transistors		80	150 Cel
NE678M04-T2-A	Renesas Electronics	NPN		YES		.205 W	.1 A				Other Transistors		75	150 Cel
NE677M04-T2-A	Renesas Electronics	NPN	SINGLE	YES		.205 W	.05 A		1		Other Transistors		75	150 Cel
NE651R479A-A	Renesas Electronics	N-CHANNEL		YES		2.5 W					Other Transistors	JUNCTION		150 Cel
NE68019-T1-A	Renesas Electronics	NPN	SINGLE	YES		.1 W	.035 A		1		Other Transistors		80	150 Cel
NE68039-T1-A	Renesas Electronics	NPN	SINGLE	YES		.2 W	.035 A		1		Other Transistors		50	150 Cel
2SC5015-A	Renesas Electronics	NPN	SINGLE	YES		.15 W	.03 A		1		Other Transistors		75	150 Cel
2SC5015-T1-A	Renesas Electronics	NPN	SINGLE	YES		.15 W	.03 A		1		Other Transistors		75	150 Cel
FDMC4435BZ-F126	Fairchild Semiconductor	P-CHANNEL	SINGLE	YES		31 W		ENHANCEMENT MODE	1	18 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	NICKEL PALLADIUM GOLD	18 A	1	e4	30	260
BF245A,126	NXP Semiconductors	N-CHANNEL		NO		.3 W					Other Transistors	JUNCTION		150 Cel	Matte Tin (Sn)			e3
BF512,235	NXP Semiconductors	N-CHANNEL		YES		.25 W					Other Transistors	JUNCTION		150 Cel	TIN		1	e3	30	260
BF861B,235	NXP Semiconductors	N-CHANNEL		YES		.25 W					Other Transistors	JUNCTION		150 Cel	MATTE TIN		1	e3		260
BFG410W,135	NXP Semiconductors	NPN	SINGLE	YES		.054 W	.012 A		1		Other Transistors		50	150 Cel	TIN			e3	30	260
BFG425W,135	NXP Semiconductors	NPN	SINGLE	YES		.135 W	.03 A		1		Other Transistors		50	150 Cel	TIN		1	e3		260
BFG480W,135	NXP Semiconductors	NPN	SINGLE	YES		.36 W	.25 A		1		Other Transistors		40	150 Cel	TIN			e3	30	260
BFG67,235	NXP Semiconductors	NPN	SINGLE	YES	7500 MHz	.3 W	.05 A		1		Other Transistors		60	175 Cel	TIN		1	e3	30	260
BFQ67W,135	NXP Semiconductors	NPN	SINGLE	YES		.3 W	.05 A		1		Other Transistors		60	150 Cel	TIN			e3	30	260
BFR30,235	NXP Semiconductors	N-CHANNEL		YES		.3 W					Other Transistors	JUNCTION		150 Cel	TIN		1	e3	30	260
BFR31,235	NXP Semiconductors	N-CHANNEL		YES		.3 W					Other Transistors	JUNCTION		150 Cel	TIN		1	e3	30	260
BFR520,235	NXP Semiconductors	NPN	SINGLE	YES		.3 W	.07 A		1		Other Transistors		60	150 Cel	TIN		1	e3	30	260
BFR540,235	NXP Semiconductors	NPN	SINGLE	YES		.5 W	.12 A		1		Other Transistors		60	150 Cel	TIN		1	e3	30	260
BFR93AW,135	NXP Semiconductors	NPN	SINGLE	YES	4500 MHz	.3 W	.035 A		1		Other Transistors		40	150 Cel	TIN			e3	30	260
BFS17A,235	NXP Semiconductors	NPN	SINGLE	YES		.3 W	.025 A		1		Other Transistors		20	175 Cel	TIN		1	e3	30	260
BFS17W,135	NXP Semiconductors	NPN	SINGLE	YES	1600 MHz	.3 W	.05 A		1		Other Transistors		25	150 Cel	TIN			e3	30	260
BFS520,135	NXP Semiconductors	NPN	SINGLE	YES		.3 W	.07 A		1		Other Transistors		60	150 Cel	TIN			e3	30	260
BF556A,235	NXP Semiconductors	N-CHANNEL		YES		.25 W					Other Transistors	JUNCTION		150 Cel	TIN		1	e3	30	260
BF862,235	NXP Semiconductors	N-CHANNEL		YES		.225 W					Other Transistors	JUNCTION		150 Cel	TIN		1	e3	30	260
BFG10,215	NXP Semiconductors	NPN	SINGLE	YES		.4 W	.25 A		1		Other Transistors		25	175 Cel	Matte Tin (Sn)			e3
PBR941B,215	NXP Semiconductors	NPN	SINGLE	YES	7000 MHz	.36 W	.05 A		1		Other Transistors		100	150 Cel	TIN		1	e3	30	260
PBSS4520X,146	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	2.5 W	5 A		1		Other Transistors		200	150 Cel	TIN		1	e3	30	260
JANTX2N3019A	Microsemi
PMDPB65UP,115	NXP Semiconductors	P-CHANNEL		YES		8.3 W		ENHANCEMENT MODE		3.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	TIN	3.5 A	1	e3	30	260
2SA2154CT-Y(TPL3)	Toshiba	PNP	SINGLE	YES	80 MHz	.1 W	.1 A		1		Other Transistors		120	150 Cel

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.