Power Field Effect Transistors (FET)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

SEF120

STMicroelectronics

N-CHANNEL

SINGLE

NO

40 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

SP201

Polyfet R F Devices

N-CHANNEL

SINGLE

20 W

ENHANCEMENT MODE

1

1.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.2 A

TPC8207(TE12L)

Toshiba

N-CHANNEL

YES

1.5 W

ENHANCEMENT MODE

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

2N3819-D27Z

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

.35 W

ENHANCEMENT MODE

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

.05 A

e3

FQD2N60CTF

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

44 W

ENHANCEMENT MODE

1

1.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

1.9 A

1

e3

260

NTR4503NT3

Onsemi

N-CHANNEL

SINGLE

YES

.73 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN LEAD

2 A

1

e0

235

AO4413L

Alpha & Omega Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

15 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

3 W

150 Cel

SILICON

-55 Cel

.0085 ohm

15 A

DUAL

R-PDSO-G8

1067 pF

BF1005S-E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

1

260

BF1005SR-E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

1

260

AO3422L

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

2.1 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

1.25 W

150 Cel

SILICON

-55 Cel

.16 ohm

2.1 A

DUAL

R-PDSO-G3

TO-236

12.6 pF

AO4822A

Alpha & Omega Semiconductor

N-CHANNEL

YES

2 W

ENHANCEMENT MODE

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

AO4822AL

Alpha & Omega Semiconductor

N-CHANNEL

YES

2 W

ENHANCEMENT MODE

8.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8.5 A

AON7408

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

YES

11 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

18 A

2SK3305-S-AZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

AO4490L

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.8 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

2.8 W

150 Cel

SILICON

-55 Cel

.0072 ohm

16 A

DUAL

R-PDSO-G8

238 pF

AO4614BL

Alpha & Omega Semiconductor

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

40 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

2 W

150 Cel

SILICON

-55 Cel

.03 ohm

6 A

DUAL

R-PDSO-G8

43 pF

FDC2512-F095

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

1.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.4 A

FDC3512-F095

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

FDC3612-F095

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

2.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.6 A

FDC5612-F095

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

4.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.3 A

FDC655BN-NBNN007

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

6.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

6.3 A

1

e3

30

260

NDS355AN-NB9L007A

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

1.7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin (Sn)

1.7 A

1

e3

30

260

FQPF6N90CT

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

56 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

6 A

e3

FDS8984-F40

Fairchild Semiconductor

N-CHANNEL

YES

1.6 W

ENHANCEMENT MODE

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

7 A

1

e3

30

260

VNP10N06-E

STMicroelectronics

N-CHANNEL

SINGLE

NO

42 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

VNN3NV04TR-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

7 W

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

1

e3

30

260

BF5020-E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DEPLETION MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

1

260

BF5020R-E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DEPLETION MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

1

260

BF5030-E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

1

260

BF5030R-E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.025 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.025 A

1

260

SP8K5FU6TB

ROHM

N-CHANNEL

YES

2 W

ENHANCEMENT MODE

3.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.5 A

1

10

260

SP8K2FU6TB

ROHM

N-CHANNEL

YES

2 W

ENHANCEMENT MODE

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

1

10

260

RDX045N60FU6

ROHM

N-CHANNEL

SINGLE

NO

35 W

ENHANCEMENT MODE

1

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.5 A

BLF6G20-180PN,112

NXP Semiconductors

N-CHANNEL

NO

ENHANCEMENT MODE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

BLF6G20S-45,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

13 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

13 A

BLF6G20S-45,118

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

13 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

13 A

PHP165NQ08T,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

250 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

75 A

AOTF4N60

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

NO

35 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

AOTF5N50

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

203 mJ

5 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

52.4 ns

-55 Cel

70.4 ns

1.5 ohm

5 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

5.9 pF

IRF6727MTR1PBF

International Rectifier

N-CHANNEL

SINGLE

YES

89 W

ENHANCEMENT MODE

1

180 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

180 A

BLF888,112

NXP Semiconductors

N-CHANNEL

500 W

ENHANCEMENT MODE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

30

260

BLF6G27-75,112

NXP Semiconductors

N-CHANNEL

SINGLE

75 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

18 A

BLF6G27LS-75,112

NXP Semiconductors

N-CHANNEL

SINGLE

75 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

18 A

BLF6G10-160RN,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

39 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

39 A

BLF6G10LS-160RN,11

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

39 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

39 A

BLF6G10-135RN,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

32 A

BLF6G22-180PN,135

NXP Semiconductors

N-CHANNEL

ENHANCEMENT MODE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

225 Cel

1

BF904A,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

.03 A

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.