Power Field Effect Transistors (FET)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

PSMN5R6-100XS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

60 W

ENHANCEMENT MODE

1

61 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

61 A

AOB10N60L

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

YES

250 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

AOW4S60

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

NO

83 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

AOWF4S60

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

NO

25 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

PMT29EN,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

8.33 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

6 A

1

e3

30

260

PMT29EN,135

NXP Semiconductors

N-CHANNEL

SINGLE

YES

8.33 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

BUK653R3-30C,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

204 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

100 A

e3

NX3008NBKT,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.3 W

ENHANCEMENT MODE

1

.35 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.35 A

1

e3

30

260

PMT21EN,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

8.33 W

ENHANCEMENT MODE

1

7.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

7.4 A

1

e3

30

260

PSMN7R0-100XS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

57 W

ENHANCEMENT MODE

1

55 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

55 A

PSMN9R0-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

34 W

ENHANCEMENT MODE

1

46 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

46 A

1

e3

30

260

SSM3K15ACT(TPL3)

Toshiba

N-CHANNEL

SINGLE

YES

.1 W

ENHANCEMENT MODE

1

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

TK12J60U(F)

Toshiba

N-CHANNEL

SINGLE

NO

144 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

TK20J60U(F)

Toshiba

N-CHANNEL

SINGLE

NO

190 W

ENHANCEMENT MODE

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

TK15J60U(F)

Toshiba

N-CHANNEL

SINGLE

NO

170 W

ENHANCEMENT MODE

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

15 A

SSM6K411TU(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

SSM4K27CT(TPL3)

Toshiba

N-CHANNEL

SINGLE

YES

.4 W

ENHANCEMENT MODE

1

.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.5 A

BLF6G22L-40P,112

NXP Semiconductors

N-CHANNEL

ENHANCEMENT MODE

16 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

16 A

30

260

BLF6G22L-40P,118

NXP Semiconductors

N-CHANNEL

ENHANCEMENT MODE

16 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

16 A

30

260

PSMN016-100XS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

46.1 W

ENHANCEMENT MODE

1

32.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32.1 A

PSMN010-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

30 W

ENHANCEMENT MODE

1

39 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

39 A

1

e3

30

260

PSMN027-100XS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

41.1 W

ENHANCEMENT MODE

1

23.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

23.4 A

2SK3816-DL-E

Onsemi

N-CHANNEL

SINGLE

YES

50 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

40 A

1

e6

2SK3820-DL-E

Onsemi

N-CHANNEL

SINGLE

NO

50 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

104 A

84.5 mJ

26 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

1.65 W

150 Cel

SILICON

Tin/Bismuth (Sn/Bi)

.08 ohm

26 A

SINGLE

R-PSIP-T3

1

e6

110 pF

PSMN013-100XS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

48.4 W

ENHANCEMENT MODE

1

35.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

35.2 A

BLF7G27L-135,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

28 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

28 A

BLF7G27L-135,118

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

28 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

28 A

PSMN012-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

26 W

ENHANCEMENT MODE

1

33 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

33 A

1

e3

30

260

AOB1608L

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

333 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

256 A

638 mJ

140 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0073 ohm

11 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

80 pF

AOD4454

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

1.3 mJ

20 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.11 ohm

20 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

31 pF

PMV90EN,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

2.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

2.1 A

1

e3

30

260

2SK4066-DL-E

Onsemi

N-CHANNEL

SINGLE

YES

90 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

100 A

1

e6

2SK4065-DL-E

Onsemi

N-CHANNEL

SINGLE

YES

90 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

100 A

1

e6

BF1118R,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

DEPLETION MODE

1

.01 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.01 A

1

e3

30

260

BF1118,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

DEPLETION MODE

1

.01 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.01 A

1

e3

30

260

BF1118W,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

DEPLETION MODE

1

.01 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.01 A

1

e3

30

260

2SK3817-DL-E

Onsemi

N-CHANNEL

SINGLE

YES

65 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

60 A

1

e6

BLP7G22-10,135

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

PMR290UNE,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.77 W

ENHANCEMENT MODE

1

.7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.7 A

1

e3

30

260

AOTF240L

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

NO

41 W

ENHANCEMENT MODE

1

85 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

85 A

AOB290L

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

YES

500 W

ENHANCEMENT MODE

1

140 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

140 A

AON6234

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

83 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

220 A

125 mJ

85 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.005 ohm

85 A

DUAL

R-PDSO-F8

DRAIN

77 pF

AON6411

Alpha & Omega Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

156 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

340 A

245 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0036 ohm

85 A

DUAL

R-PDSO-F8

DRAIN

1395 pF

AON7242

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

83 W

PLASTIC/EPOXY

SWITCHING

40 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

255 A

115 mJ

50 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0058 ohm

50 A

DUAL

S-PDSO-N8

DRAIN

70 pF

AOTF12N30

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

36 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

29 A

430 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.42 ohm

11.5 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

11 pF

UPA1970TE-T1-AT

Renesas Electronics

N-CHANNEL

YES

1.15 W

ENHANCEMENT MODE

2.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

2.2 A

e3

260

ECH8659-M-TL-H

Onsemi

N-CHANNEL

YES

1.5 W

ENHANCEMENT MODE

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

7 A

1

e6

CPH6444-TL-E

Onsemi

N-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

4.5 A

1

e6

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.