Power Field Effect Transistors (FET)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NTMFD4902NFT1G

Onsemi

N-CHANNEL

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

YES

3.45 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

60 A

28.8 mJ

23 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.01 ohm

13.5 A

DUAL

R-PDSO-F8

1

DRAIN SOURCE

e3

30

260

NTMFS5830NLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

690 A

361 mJ

172 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.0036 ohm

28 A

DUAL

R-PDSO-F5

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

NVD5117PLT4G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

118 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

419 A

240 mJ

61 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.022 ohm

11 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

NVMFS5832NLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

127 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

523 A

120 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.0072 ohm

120 A

DUAL

R-PDSO-F5

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

NVMFS5832NLT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

127 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

523 A

120 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.0072 ohm

120 A

DUAL

R-PDSO-F5

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

NVTFS4824NTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

21 W

PLASTIC/EPOXY

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

402 A

72 mJ

46 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.0075 ohm

46 A

DUAL

R-PDSO-F5

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

NVTFS4824NTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

21 W

PLASTIC/EPOXY

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

402 A

72 mJ

46 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.0075 ohm

46 A

DUAL

R-PDSO-F5

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

RSD175N10TL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

35 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN COPPER

.119 ohm

17.5 A

SINGLE

R-PSSO-G2

1

e2

10

260

NTMFS4946NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

55.5 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

200 A

205 mJ

100 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0051 ohm

12.7 A

DUAL

R-PDSO-F6

1

DRAIN

e3

30

260

289 pF

STF11N65K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

212 mJ

11 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.85 ohm

11 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

NTDV3055L104-1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

48 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

45 A

61 mJ

12 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.104 ohm

12 A

SINGLE

R-PSIP-T3

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

NTDV3055L104T4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

48 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

45 A

61 mJ

12 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.104 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

NVD5807NT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

33 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

45 A

29.4 mJ

23 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.031 ohm

23 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

STB18N55M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

550 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

52 A

200 mJ

13 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.24 ohm

13 A

SINGLE

R-PSSO-G2

1

ULTRA-LOW RESISTANCE

TO-263AB

e3

30

245

STI11NM80

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

400 mJ

11 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.4 ohm

11 A

SINGLE

R-PSIP-T3

ULTRA-LOW RESISTANCE

TO-262AA

e3

STI260N6F6

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

120 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.003 ohm

120 A

SINGLE

R-PSIP-T3

TO-262AA

e3

STI26NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

610 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.165 ohm

20 A

SINGLE

R-PSIP-T3

TO-262AA

NTMFS4983NFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

38 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

320 A

101 mJ

106 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0031 ohm

22 A

DUAL

R-PDSO-F5

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

NTMFS4983NFT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

38 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

320 A

101 mJ

106 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0031 ohm

22 A

DUAL

R-PDSO-F5

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

NTTFS4985NFTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

22.73 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

192 A

52 mJ

64 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0052 ohm

16.3 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

NVD6820NLT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

90 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

310 A

144 mJ

50 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0205 ohm

10 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

AEC-Q101

NVD6824NLT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

88 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

231 A

80 mJ

41 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.023 ohm

8.5 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

NVMFS5826NLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

39 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

130 A

20 mJ

26 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.032 ohm

26 A

DUAL

R-PDSO-F5

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

NVMFS5826NLT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

39 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

130 A

20 mJ

26 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.032 ohm

26 A

DUAL

R-PDSO-F5

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

NVMFS5844NLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

107 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

247 A

61 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.016 ohm

61 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

AEC-Q101

NVMFS5844NLT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

107 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

247 A

61 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.016 ohm

61 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

TT8J11TCR

ROHM

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

12 A

3.5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.043 ohm

3.5 A

DUAL

R-PDSO-F8

1

10

260

TT8J13TCR

ROHM

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

5 A

2.5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.062 ohm

2.5 A

DUAL

R-PDSO-F8

1

10

260

SIHG73N60E-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

520 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

236 A

2030 mJ

73 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.039 ohm

73 A

SINGLE

R-PSFM-T3

AVALANCHE RATED

TO-247AC

NOT SPECIFIED

NOT SPECIFIED

IRF7350TRPBF

International Rectifier

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8.4 A

35 mJ

2.1 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.21 ohm

2.1 A

DUAL

R-PDSO-G8

1

HIGH RELIABILITY

MS-012AA

e3

30

260

NCV8406ADTRKG

Onsemi

N-CHANNEL

COMPLEX

YES

2.31 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

110 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

.24 ohm

SINGLE

R-PSSO-G2

DRAIN

AEC-Q101

RCX450N20

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

160 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN SILVER COPPER

.055 ohm

45 A

SINGLE

R-PSFM-T3

1

ISOLATED

TO-220AB

e1

10

260

RP1H065SPTR

ROHM

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

45 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

26 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.046 ohm

6.5 A

DUAL

R-PDSO-F6

DRAIN

NOT SPECIFIED

NOT SPECIFIED

QJD1210011

Powerex

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

250 A

20

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON CARBIDE

.025 ohm

100 A

UPPER

R-PUFM-X20

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

DMN3112SQ-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

5.8 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.057 ohm

5.8 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

NDF08N50ZH

Onsemi

N-CHANNEL

SINGLE

NO

35 W

1

8.5 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

8.5 A

e3

NDF11N50ZH

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

39 W

PLASTIC/EPOXY

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

420 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.52 ohm

12 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

NTMFS4936NCT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

43 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

235 A

96.8 mJ

79 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0048 ohm

11.6 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

NTP5860NLG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

283 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

660 A

735 mJ

220 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0036 ohm

130 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

e3

NVB25P06T4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

120 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

600 mJ

27.5 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.082 ohm

27.5 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

AEC-Q101

NVD20N03L27T4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.75 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

288 mJ

20 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.031 ohm

20 A

SINGLE

R-PSSO-G2

1

DRAIN

ULTRA LOW ON-RESISTANCE

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

NVD6415ANLT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

83 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

79 mJ

23 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.056 ohm

23 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

70 pF

AEC-Q101

NVMD6N04R2G

Onsemi

N-CHANNEL

YES

2 W

5.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

5.8 A

1

e3

30

260

SUD50P04-13L-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

80 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.013 ohm

50 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

NSTR4501NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

3.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.08 ohm

3.2 A

DUAL

R-PDSO-G3

1

TO-236

e3

30

260

AEC-Q101

NVD4810NT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

98 mJ

54 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0157 ohm

9 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

AEC-Q101

NVD5806NT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

40 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

67 A

39 mJ

33 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.019 ohm

33 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

AEC-Q101

NVD6414ANT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

117 A

154 mJ

32 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.037 ohm

32 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

AEC-Q101

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.