Power Field Effect Transistors (FET)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NVB6413ANT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

136 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

178 A

200 mJ

42 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.028 ohm

42 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

AEC-Q101

NVB5860NT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

283 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

660 A

735 mJ

220 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.003 ohm

220 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

AEC-Q101

IPD320N20N3GBTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

136 A

190 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.032 ohm

34 A

SINGLE

R-PSSO-G2

DRAIN

TO-252AA

e3

NTMFS4982NFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

89.3 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

350 A

125 mJ

36 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0019 ohm

26.5 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

NTMFS4982NFT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

89.3 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

350 A

125 mJ

36 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0019 ohm

26.5 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

NVMFD5852NLT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

329 A

80 mJ

44 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.012 ohm

15 A

DUAL

R-PDSO-F6

1

DRAIN

e3

30

260

AEC-Q101

NVMFD5853NLT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

24 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

165 A

40 mJ

34 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.015 ohm

12 A

DUAL

R-PDSO-F6

1

DRAIN

e3

30

260

AEC-Q101

STF15N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

160 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.34 ohm

11 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STF15N80K5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

56 A

14 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.375 ohm

14 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

STP15N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

160 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.34 ohm

11 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STW15N80K5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

56 A

14 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.375 ohm

14 A

SINGLE

R-PSFM-T3

TO-247

e3

UPA2813T1L-E2-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

52 W

30 V

1

27 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

.0062 ohm

27 A

e3

260

NTMFS4C05NT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

33 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

174 A

84 mJ

21.7 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.005 ohm

11.9 A

DUAL

R-PDSO-F6

1

DRAIN

e3

30

260

59 pF

STD24N06LT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

62.5 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

72 A

162 mJ

24 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.045 ohm

24 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

AEC-Q101

STD25P03LT4G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

75 A

200 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.08 ohm

25 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

AEC-Q101

TK6A60D(STA4,Q,M)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

173 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

1.25 ohm

6 A

SINGLE

R-PSFM-T3

ISOLATED

STFI13N95K3

STMicroelectronics

N-CHANNEL

SINGLE

NO

40 W

1

10 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

STH240N75F3-2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

720 A

600 mJ

180 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

3 ohm

180 A

SINGLE

R-PSSO-G2

DRAIN

NOT SPECIFIED

NOT SPECIFIED

NVD5890NLT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

107 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

320 mJ

123 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0055 ohm

123 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

AEC-Q101

NTMFS4955NT1G

Onsemi

48 A

FET General Purpose Power

MATTE TIN

1

e3

30

260

NTMFS4955NT3G

Onsemi

48 A

FET General Purpose Power

MATTE TIN

1

e3

30

260

STB15N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

85 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44 A

160 mJ

11 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.34 ohm

11 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

30

245

STB31N65M5

STMicroelectronics

N-CHANNEL

SINGLE

YES

150 W

1

22 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

22 A

NOT SPECIFIED

NOT SPECIFIED

STF11N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

130 mJ

9 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.48 ohm

9 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STF18N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

25 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

210 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.22 ohm

15 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

STF31N65M5

STMicroelectronics

N-CHANNEL

SINGLE

NO

30 W

1

22 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

22 A

NOT SPECIFIED

NOT SPECIFIED

STF34N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

112 A

510 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.11 ohm

28 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

6.3 pF

STFI260N6F6

STMicroelectronics

N-CHANNEL

SINGLE

NO

41.7 W

1

80 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

80 A

NOT SPECIFIED

NOT SPECIFIED

STI18N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

210 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.22 ohm

15 A

SINGLE

R-PSIP-T3

DRAIN

TO-262AA

STI57N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

168 A

960 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.063 ohm

42 A

SINGLE

R-PSIP-T3

DRAIN

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

STP10P6F6

STMicroelectronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

80 mJ

10 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.116 ohm

10 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STP11N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

85 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

130 mJ

9 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.48 ohm

9 A

SINGLE

R-PSFM-T3

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STP36N55M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

550 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

132 A

33 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.08 ohm

33 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

STP38N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

660 mJ

30 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.095 ohm

30 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STW20N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

130 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

270 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.19 ohm

18 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

STW31N65M5

STMicroelectronics

N-CHANNEL

SINGLE

NO

150 W

1

22 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

22 A

NOT SPECIFIED

NOT SPECIFIED

STW34N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

112 A

510 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.11 ohm

28 A

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

STW36N55M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

550 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

132 A

33 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.08 ohm

33 A

SINGLE

R-PSFM-T3

TO-247

STF12NK80Z

STMicroelectronics

N-CHANNEL

SINGLE

NO

40 W

1

10.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

10.5 A

e3

STY139N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

520 A

2400 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.017 ohm

130 A

SINGLE

R-PSIP-T3

NOT SPECIFIED

NOT SPECIFIED

UPA2379T1P-E1-A

Renesas Electronics

N-CHANNEL

YES

1.8 W

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

8 A

e6

NVD4856NT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

179 A

180.5 mJ

89 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0068 ohm

13.3 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

AEC-Q101

NTMFS4931NT1G

Onsemi

246 A

FET General Purpose Power

MATTE TIN

1

e3

30

260

NTMFS4931NT3G

Onsemi

246 A

FET General Purpose Power

MATTE TIN

1

e3

30

260

SPD07N20GBTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

28 A

120 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.4 ohm

7 A

SINGLE

R-PSSO-G2

1

AVALANCHE RATED

TO-252

e3

DMG9N65CT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.0013 ohm

9 A

SINGLE

R-PSFM-T3

HIGH RELIABILITY

TO-220AB

e3

30

260

AEC-Q101

FDB3632_F085

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

310 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

338 mJ

12 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.009 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

30

260

AEC-Q101

UPA2670T1R-E2-AX

Renesas Electronics

P-CHANNEL

YES

2.3 W

3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

3 A

e4

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.