STMicroelectronics EEPROM 230

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M24M01-RCS6TP/A	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		5 mA	131072 words		2/5	8	GRID ARRAY	BGA8,3X3,47/24		EEPROMs	40	.6 mm	85 Cel		128KX8	128K	-40 Cel		1010DDMR	BOTTOM	HARDWARE	S-PBGA-B8				1000000 Write/Erase Cycles			Not Qualified		I2C	1048576 bit					.000001 Amp
M95M01-RCS6TP/A	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		5 mA	131072 words		2/5	8	GRID ARRAY	BGA8,3X3,47/24		EEPROMs	40	.6 mm	85 Cel		128KX8	128K	-40 Cel			BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B8				1000000 Write/Erase Cycles			Not Qualified		SPI	1048576 bit					.000003 Amp
M95320-DRMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		5 mA	4096 words		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		4KX8	4K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		SPI	32768 bit					.000001 Amp
M95320-DRDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		5 mA	4096 words		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.635 mm	85 Cel		4KX8	4K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		SPI	32768 bit					.000001 Amp
M95320-DRMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		5 mA	4096 words		2/5	8	SMALL OUTLINE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel		4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1			1000000 Write/Erase Cycles			Not Qualified		SPI	32768 bit		e4	30	260	.000001 Amp
M95160-FDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5	1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		2KX8	2K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	16384 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	4.4 mm
M24C16-FMC5TG	STMicroelectronics	EEPROM	OTHER	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words	1.8	1.8/5	8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	200	.5 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-20 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		R-XDSO-N8	1	5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V	e4	30	260	.000001 Amp	3 mm		1.8
M95256-DRDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	32 words	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		32X8	32	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	256 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	4.4 mm	80 ns
M95256-DRMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	32 words	5	5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		32X8	32	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	256 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	4.9 mm	80 ns
M95256RMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	32 words		2/5	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel		32X8	32	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	256 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	3 mm	80 ns
M95160-RCS6TP/S	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	3 mA	2048 words		2/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,3X3,16		EEPROMs	40	.4 mm	85 Cel		2KX8	2K	-40 Cel	MATTE TIN		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	1.35 mm	Not Qualified	5 ms	SPI	16384 bit	1.8 V	e3			.000001 Amp	1.365 mm
M24256-BFMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		5 mA	32768 words		1.8/5	8	SMALL OUTLINE	SOLCC8,.12,20		EEPROMs	40	.5 mm	85 Cel		32KX8	32K	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-N8	1			1000000 Write/Erase Cycles			Not Qualified		I2C	262144 bit		e3			.000001 Amp
M24256-DRDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	32768 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel		32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	4000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V	e4	30	260	.000001 Amp	4.4 mm
M24256-DRMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	32768 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel		32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	4000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified		I2C	262144 bit	1.8 V	e4	30	260	.000001 Amp	4.9 mm
M95512-DRMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		8 mA	65536 words		2/5	8	SMALL OUTLINE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel		64KX8	64K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1			1000000 Write/Erase Cycles			Not Qualified		SPI	524288 bit		e4	30	260	.000005 Amp
SRI512-SBN18/1GE	STMicroelectronics	EEPROM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		32 words	3		16	UNCASED CHIP						85 Cel		32X16	32	-20 Cel			UPPER		X-XUUC-N		3.5 V						5 ms		512 bit	2.5 V							3
SRI512-W4/1GE	STMicroelectronics	EEPROM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		32 words	3		16	UNCASED CHIP						85 Cel		32X16	32	-20 Cel			UPPER		X-XUUC-N		3.5 V						5 ms		512 bit	2.5 V							3
M24512-DRDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel		64KX8	64K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	4000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V				.000001 Amp	4.4 mm		5
M24512-DRMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	5 mA	65536 words	2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	40	.5 mm	85 Cel		64KX8	64K	-40 Cel	NICKEL PALLADIUM GOLD	1010MMMR	DUAL	HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V	e4	30	260	.000001 Amp	3 mm		5
M24512-DRMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel		64KX8	64K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	4000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V	e4	30	260	.000001 Amp	4.9 mm		5
M24512-RMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	5 mA	65536 words	2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	40	.5 mm	85 Cel		64KX8	64K	-40 Cel	NICKEL PALLADIUM GOLD	1010MMMR	DUAL	HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V	e4	30	260	.000001 Amp	3 mm		5
M24512-RMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		65536 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel		64KX8	64K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		1 MHz	2 mm		5 ms		524288 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED		3 mm		5
M24256-BFCS6TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2.5 mA	32768 words	1.8	1.8/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,3X5,14/8		EEPROMs	200	.4 mm	85 Cel		32KX8	32K	-40 Cel		1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8		5.5 V	.58 mm	4000000 Write/Erase Cycles	1 MHz	1.271 mm	Not Qualified	5 ms	I2C	262144 bit	1.7 V				.000001 Amp	1.358 mm
M95512-RCS6TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		65536 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH						85 Cel		64KX8	64K	-40 Cel			BOTTOM		R-PBGA-B8		5.5 V	.58 mm		5 MHz	1.271 mm			SPI	524288 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED		1.937 mm
M95512-RMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2.5 mA	65536 words		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel		64KX8	64K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified		SPI	524288 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	3 mm
M95020-RMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	2048 words		2/5	1	SMALL OUTLINE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel		2KX1	2K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	2048 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
M95160-DWDW4TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	4 mA	2048 words		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	145 Cel		2KX8	2K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	4000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	4 ms	SPI	16384 bit	2.5 V	e4		260	.000002 Amp	4.4 mm
M24LR04E-RUW20/2	STMicroelectronics	EEPROM	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	2.5		32	UNCASED CHIP		8				85 Cel		128X32	128	-40 Cel			UPPER		X-XUUC-N		5.5 V			.4 MHz			5 ms	I2C	4096 bit	1.8 V
M95080-DWDW4TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		1024 words			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	145 Cel		1KX8	1K	-40 Cel			DUAL		R-PDSO-G8	1	5.5 V	1.2 mm		10 MHz	3 mm		4 ms	SPI	8192 bit	2.5 V					4.4 mm
M24C16-WBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	2048 words	5	3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel	TIN LEAD	1010MMMR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V	e0			.000001 Amp	9.27 mm
M24C16-BN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	2048 words	5	5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel	TIN LEAD	1010MMMR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	16384 bit	4.5 V	e0			.000001 Amp	9.27 mm
M24C16-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	5	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel	TIN LEAD	1010MMMR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V	e0			.000001 Amp	4.9 mm
M24C16-WMN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	5	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel	TIN LEAD	1010MMMR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V	e0			.000001 Amp	4.9 mm
M24C16-MN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	5	5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel	TIN LEAD	1010MMMR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	4.5 V	e0			.000001 Amp	4.9 mm
M24C08-WBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	1024 words	5	3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel	OPEN-DRAIN	1KX8	1K	-40 Cel	TIN LEAD	1010DMMR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V	e0			.000001 Amp	9.27 mm
M24C08-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words	5	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	1KX8	1K	-40 Cel	TIN LEAD	1010DMMR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V	e0			.000001 Amp	4.9 mm
M24C08-WMN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words	5	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	1KX8	1K	-40 Cel	TIN LEAD	1010DMMR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V	e0			.000001 Amp	4.9 mm
M95512-DRDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	8 mA	65536 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		64KX8	64K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	524288 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	4.4 mm
M95512-DRMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	8 mA	65536 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		64KX8	64K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	524288 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	4.9 mm
M95512-RMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	8 mA	65536 words	2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel		64KX8	64K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	524288 bit	1.8 V	e4	30	260	.000005 Amp	3 mm
M24C32-WBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	4096 words	5	3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel	OPEN-DRAIN	4KX8	4K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	32768 bit	2.5 V	e0			.000002 Amp	9.27 mm
M24C32-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	1 mA	4096 words	5	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	4KX8	4K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	32768 bit	2.5 V	e0			.000002 Amp	4.9 mm
M24C64-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	8192 words	5	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	65536 bit	2.5 V	e0			.000002 Amp	4.9 mm
M93C46-WBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words	5	3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	85 Cel	3-STATE	64X16	64	-40 Cel	Tin/Lead (Sn/Pb)		DUAL	SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V	e0			.000005 Amp	9.27 mm
M93C56-WBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words	5	3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	85 Cel	3-STATE	128X16	128	-40 Cel	TIN LEAD		DUAL	SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	2.5 V	e0			.00001 Amp	9.27 mm
M93C76-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	512 words	5	3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	512X16	512	-40 Cel	TIN LEAD		DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	8192 bit	2.5 V	e0			.00001 Amp	4.9 mm
M93C46-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	5	3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	64X16	64	-40 Cel	TIN LEAD		DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V	e0			.000005 Amp	4.9 mm
M93C46-WMN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	5	3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	64X16	64	-40 Cel	TIN LEAD		DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V	e0			.000005 Amp	4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.