STMicroelectronics EEPROM 230

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)
M95040-WMN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS	2 mA	512 words	5	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	512X8	512	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	4096 bit	2.5 V		e0			.000002 Amp	4.9 mm
M24128S-FCU6T/T	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16384 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel	16KX8	16K	-40 Cel			BOTTOM		S-PBGA-B4		5.5 V	.3 mm		1 MHz	.833 mm		5 ms	I2C	131072 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		.833 mm
M24256-BWMW6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	32768 words	5	3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel	32KX8	32K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	2.03 mm	100000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V		e0			.000002 Amp	5.3 mm
M95M01-RMW6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel	128KX8	128K	-40 Cel	Matte Tin (Sn) - annealed		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.5 mm	1000000 Write/Erase Cycles	5 MHz	5.62 mm	Not Qualified	5 ms	SPI	1048576 bit	1.8 V		e3	30	260	.000003 Amp
M95M01-RMW6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel	128KX8	128K	-40 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.5 mm	1000000 Write/Erase Cycles	5 MHz	5.62 mm	Not Qualified	5 ms	SPI	1048576 bit	1.8 V		e3	30	260	.000003 Amp
M24C32-WBN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	4096 words	2.7	3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel	4KX8	4K	-40 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V		e3			.000002 Amp	9.27 mm
M24C32-FDW5TP	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	4096 words	1.8	1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel	4KX8	4K	-20 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	32768 bit	1.7 V		e0			.000001 Amp	4.4 mm
M24C64-FDW5TP	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	1.8	1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel	8KX8	8K	-20 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V		e0			.000001 Amp	4.4 mm
M95020-RMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5	2/5	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel	256X8	256	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	2048 bit	1.8 V		e4	30	260	.000001 Amp	3 mm
M95040-RMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	512 words	2.5	2/5	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel	512X8	512	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	4096 bit	1.8 V		e4	30	260	.000002 Amp	3 mm
M24256-BWMN6TP/A	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	32768 words		3/5	8	SMALL OUTLINE	SOP8,.25	1	EEPROMs	40	1.27 mm	85 Cel	32KX8	32K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.9 mm	5
M24C08-FMC5TG	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	1024 words	5	1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	1	EEPROMs	40	.5 mm	85 Cel	1KX8	1K	-20 Cel	NICKEL PALLADIUM GOLD	1010DMMR	DUAL	HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V		e4	30	260	.000001 Amp	3 mm
M24C16-FMB5TG	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	2048 words	2.5	1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel	2KX8	2K	-20 Cel		1010MMMR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
M24LR64-RDW6T/2	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.7 mA	2048 words	2.5	2/5	32	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	40	.5 mm	85 Cel	2KX32	2K	-40 Cel	NICKEL PALLADIUM GOLD	1010CDDR	DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V		e4	30	260	.00003 Amp	3 mm
M24LR64-RMB6T/2	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.7 mA	2048 words	2.5	2/5	32	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	8	EEPROMs	40	.5 mm	85 Cel	2KX32	2K	-40 Cel	NICKEL PALLADIUM GOLD	10100DDR	DUAL	SOFTWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V		e4	30	260	.00003 Amp	3 mm
M24LR64-RMN6T/2	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.7 mA	2048 words	2.5	2/5	32	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	2KX32	2K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010CDDR	DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V		e4	30	260	.00003 Amp	4.9 mm
M24M01-RMW6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	262144 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel	256KX8	256K	-40 Cel	Matte Tin (Sn) - annealed	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	2.5 mm	1000000 Write/Erase Cycles	.4 MHz		Not Qualified	5 ms	I2C	2097152 bit	1.8 V		e3	30	260	.000001 Amp
M24M01-RMW6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	262144 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel	256KX8	256K	-40 Cel	Matte Tin (Sn) - annealed	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	2.5 mm	1000000 Write/Erase Cycles	.4 MHz		Not Qualified	5 ms	I2C	2097152 bit	1.8 V		e3	30	260	.000001 Amp
M95256-RCS6TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	3 mA	32768 words	5	2/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,3X5,17/10		EEPROMs	40	.5 mm	85 Cel	32KX8	32K	-40 Cel			BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8		5.5 V	.65 mm	1000000 Write/Erase Cycles	5 MHz	1.785 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	1.97 mm
M95320-RMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	5 mA	4096 words	2.5	2/5	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel	4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	10 ms	SPI	32768 bit	1.8 V		e4			.000002 Amp	3 mm
M95640-RMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	2.5	2/5	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel	8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	10 ms	SPI	65536 bit	1.8 V		e4			.000001 Amp	3 mm
M95320-MN3/B	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	4096 words	5	5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel	4KX8	4K	-40 Cel	Tin/Lead (Sn/Pb)		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	32768 bit	4.5 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e0			.000005 Amp	4.9 mm
M34D64-WMN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	8192 words	5	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	8KX8	8K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.9 mm
M34D64-WMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	8192 words	5	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V		e4			.000002 Amp	4.9 mm
M34F04-WMN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	512 words	3.3	2.7/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	512X8	512	-40 Cel	NICKEL PALLADIUM GOLD	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V		e4			.0000005 Amp	4.9 mm
M24C04-FDW5TP	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	512 words	2.5	1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel	512X8	512	-20 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V		e4	30	260	.000001 Amp	4.4 mm
M24C04-FMB5TG	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	512 words	2.5	1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel	512X8	512	-20 Cel	NICKEL PALLADIUM GOLD	1010DDMR	DUAL	HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V		e4			.000001 Amp	3 mm
M24C08-FMB5TG	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	1024 words	5	1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	1	EEPROMs	40	.5 mm	85 Cel	1KX8	1K	-20 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DMMR	DUAL	HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V		e4	30	260	.000001 Amp	3 mm
M24512-HRMN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	64KX8	64K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V		e4			.000001 Amp	4.9 mm
M24512-HRMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	64KX8	64K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V		e4			.000001 Amp	4.9 mm
M24M01-HRMN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	262144 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	256KX8	256K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	2097152 bit	1.8 V		e4	40	260	.000001 Amp	4.9 mm
M24M01-HRMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	262144 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	256KX8	256K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	2097152 bit	1.8 V		e4	40	260	.000001 Amp	4.9 mm
M24256-BHRDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	32768 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel	32KX8	32K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.4 mm
M24256-BHRMN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	32768 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	32KX8	32K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.9 mm
M24256-BHRMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	32768 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	32KX8	32K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.9 mm
M24128-BFMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	16384 words	1.8	1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel	16KX8	16K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL	HARDWARE	R-XDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V		e4	30	260	.000001 Amp	3 mm
M24C32-FMB5TG	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	4096 words	1.8	1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel	4KX8	4K	-20 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
M24C64-FMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	1.8	1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel	8KX8	8K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
M24C64-RMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel	8KX8	8K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
M95128-RMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	16384 words	2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel	16KX8	16K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	2 MHz	2 mm	Not Qualified	5 ms	SPI	131072 bit	1.8 V		e4	30	260	.000003 Amp	3 mm
M95256-RCS6TP/A	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	3 mA	32768 words	2.5	2/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,3X5,17/10		EEPROMs	40	.5 mm	85 Cel	32KX8	32K	-40 Cel			BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8		5.5 V	.65 mm	1000000 Write/Erase Cycles	2 MHz	1.785 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	1.97 mm
M24C32S-FCU6T/T	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4096 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel	4KX8	4K	-40 Cel			BOTTOM		S-PBGA-B4		5.5 V	.3 mm		1 MHz	.833 mm		5 ms	I2C	32768 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		.833 mm
M24C64S-FCU6T/T	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel	8KX8	8K	-40 Cel			BOTTOM		S-PBGA-B4		5.5 V	.3 mm		1 MHz	.833 mm		5 ms	I2C	65536 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		.833 mm
M93C46-RDW3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		64 words	2.5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	125 Cel	64X16	64	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8	1	5.5 V	1.2 mm		2 MHz	3 mm		4 ms	MICROWIRE	1024 bit	1.8 V		e4	30	260		4.4 mm
M93C86-RDW3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		1024 words	2.5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	125 Cel	1KX16	1K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8	1	5.5 V	1.2 mm		2 MHz	3 mm		4 ms	MICROWIRE	16384 bit	1.8 V		e4	30	260		4.4 mm
M24256-BRCS6TP/A	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	32768 words		2/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,3X5,17/10	1	EEPROMs	40	.5 mm	85 Cel	32KX8	32K	-40 Cel		1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8		5.5 V	.65 mm	1000000 Write/Erase Cycles	.4 MHz	1.785 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	1.97 mm
M24256-BWMN6TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	32768 words		3/5	8	SMALL OUTLINE	SOP8,.25	1	EEPROMs	40	1.27 mm	85 Cel	32KX8	32K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.9 mm
M24128-BFCS6TP/A	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	3 mA	16384 words	1.8	2/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,3X5,17/10		EEPROMs	40	.5 mm	85 Cel	16KX8	16K	-40 Cel		1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8		5.5 V	.635 mm	1000000 Write/Erase Cycles	.4 MHz	1.4 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	1.805 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.