Insulated Gate Bipolar Transistors (IGBT)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

STGD3NB60SD-1

STMicroelectronics

N-CHANNEL

YES

48 W

3 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

4.5 V

MATTE TIN

1

e3

30

260

STGF14N60D

STMicroelectronics

N-CHANNEL

NO

33 W

11 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

STGP14N60D

STMicroelectronics

N-CHANNEL

NO

95 W

25 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

6.5 V

TIG066SS-TL-E

Onsemi

N-CHANNEL

YES

Insulated Gate BIP Transistors

150 Cel

400 V

6 V

1 V

Tin/Bismuth (Sn/Bi)

1

e6

TIG052TS-TL-E

Onsemi

N-CHANNEL

YES

Insulated Gate BIP Transistors

150 Cel

400 V

6 V

1 V

Tin/Bismuth (Sn/Bi)

1

e6

AOT10B60D

Alpha & Omega Semiconductor

N-CHANNEL

NO

163 W

20 A

Insulated Gate BIP Transistors

175 Cel

600 V

20 V

AOK30B60D1

Alpha & Omega Semiconductor

N-CHANNEL

NO

208 W

60 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

NGTB15N135IHRWG

Onsemi

N-CHANNEL

NO

357 W

30 A

Insulated Gate BIP Transistors

175 Cel

1350 V

20 V

6.5 V

Matte Tin (Sn) - annealed

e3

GT20J341,S4X(S

Toshiba

N-CHANNEL

NO

45 W

20 A

Insulated Gate BIP Transistors

150 Cel

600 V

25 V

STGDL6NC60DIT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

13 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

122 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

SINGLE

R-PSSO-G2

Not Qualified

TO-252

NOT SPECIFIED

NOT SPECIFIED

10.5 ns

STGPL6NC60DI

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

56 W

14 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

122 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

SINGLE

R-PSFM-T3

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

10.5 ns

FD600R06ME3_B11_S2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND THERMISTOR

NO

UNSPECIFIED

POWER CONTROL

UNSPECIFIED

RECTANGULAR

1

960 ns

11

FLANGE MOUNT

SILICON

600 V

UPPER

R-XUFM-X11

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

275 ns

FS100R17KS4F

Infineon Technologies

N-CHANNEL

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

960 W

100 A

UNSPECIFIED

POWER CONTROL

4.7 V

UNSPECIFIED

RECTANGULAR

6

515 ns

23

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1700 V

20 V

UPPER

R-XUFM-X23

NOT SPECIFIED

NOT SPECIFIED

141 ns

IKD03N60RF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

53.6 W

5 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

265 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e3

18 ns

IKD04N60RF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

75 W

8 A

PLASTIC/EPOXY

POWER CONTROL

GULL WING

RECTANGULAR

1

216 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

20 V

5.7 V

TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

TO-252

e3

260

18 ns

STGW50H60DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

360 W

100 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

285 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

TO-247

e3

91 ns

STGW60H65F

STMicroelectronics

N-CHANNEL

SINGLE

NO

360 W

120 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

265 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

650 V

20 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

96 ns

STGWA60NC60WDR

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

340 W

130 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

343 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.75 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

69 ns

FD1200R17HP4-K_B2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

6500 W

PLASTIC/EPOXY

POWER CONTROL

2.25 V

UNSPECIFIED

RECTANGULAR

1

1800 ns

7

FLANGE MOUNT

150 Cel

SILICON

1700 V

-40 Cel

20 V

6.4 V

UPPER

R-PUFM-X7

1

ISOLATED

900 ns

UL APPROVED

STGD8NC60KT4

STMicroelectronics

N-CHANNEL

YES

62 W

15 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

MATTE TIN

1

e3

NGTB15N120IHLWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

156 W

30 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

440 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

NGTB15N60S1EG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

117 W

30 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

440 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

650 V

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

93 ns

NGTB20N120IHLWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

192 W

40 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

485 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

NGTB20N120LWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

192 W

40 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

485 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

110 ns

NGTB25N120IHLWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

192 W

50 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

475 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

NGTB25N120LWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

192 W

50 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

475 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

117 ns

NGTG15N60S1EG

Onsemi

N-CHANNEL

SINGLE

NO

117 W

30 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

440 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

650 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-220AB

e3

93 ns

STGW50HF60SD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

284 W

110 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

950 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.7 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

TO-247

e3

69 ns

STGW50HF60S

STMicroelectronics

N-CHANNEL

SINGLE

NO

284 W

110 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

950 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

600 V

20 V

5.7 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

TO-247

e3

69 ns

STGWA30N120KD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

220 W

60 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

756 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

25 V

6.5 V

Matte Tin (Sn)

SINGLE

R-PSFM-T3

TO-247

e3

57 ns

STGWA40N120KD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

240 W

80 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

564 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

125 Cel

SILICON

1200 V

25 V

6.5 V

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

83 ns

NGTB15N60EG

Onsemi

N-CHANNEL

NO

117 W

30 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

TIN

e3

STGB30H60DF

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

260 W

60 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

GULL WING

RECTANGULAR

1

234 ns

2

SMALL OUTLINE

Insulated Gate BIP Transistors

175 Cel

SILICON

600 V

-40 Cel

20 V

7 V

SINGLE

R-PSSO-G2

COLLECTOR

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

64 ns

STGP30H60DF

STMicroelectronics

N-CHANNEL

NO

150 W

60 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

NOT SPECIFIED

NOT SPECIFIED

STGW60H65DRF

STMicroelectronics

N-CHANNEL

NO

360 W

120 A

Insulated Gate BIP Transistors

150 Cel

650 V

20 V

Matte Tin (Sn)

e3

NGTB15N120FLWG

Onsemi

N-CHANNEL

NO

156 W

30 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

6.5 V

TIN

e3

NGTB20N120IHSWG

Onsemi

N-CHANNEL

NO

156 W

40 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

6.5 V

TIN

e3

NGTB25N120FLWG

Onsemi

N-CHANNEL

NO

192 W

50 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

6.5 V

TIN

e3

NGTB30N120IHLWG

Onsemi

N-CHANNEL

NO

260 W

60 A

Insulated Gate BIP Transistors

150 Cel

1200 V

20 V

6.5 V

TIN

e3

NGTB30N120LWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

560 W

60 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

596 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

167 ns

NGTB40N120FLWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

630 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

172 ns

NGTB40N120IHLWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260 W

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

565 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

NGTB40N120LWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

260 W

80 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

565 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

150 Cel

SILICON

1200 V

20 V

6.5 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

TO-247

e3

178 ns

STGF35HF60W

STMicroelectronics

N-CHANNEL

NO

40 W

19 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

5.75 V

STGFW35HF60W

STMicroelectronics

N-CHANNEL

NO

88 W

36 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

5.75 V

NGTB40N60IHLWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

80 A

PLASTIC/EPOXY

POWER CONTROL

THROUGH-HOLE

RECTANGULAR

1

230 ns

3

FLANGE MOUNT

SILICON

600 V

TIN

SINGLE

R-PSFM-T3

TO-247

e3

110 ns

NGTB50N60FLWG

Onsemi

N-CHANNEL

NO

223 W

100 A

Insulated Gate BIP Transistors

150 Cel

600 V

20 V

6.5 V

Tin (Sn)

e3

IGC70T120T8RL

Infineon Technologies

N-CHANNEL

SINGLE

YES

UNSPECIFIED

POWER CONTROL

2.07 V

NO LEAD

RECTANGULAR

1

5

UNCASED CHIP

175 Cel

SILICON

1200 V

-40 Cel

20 V

6.3 V

UPPER

R-XUUC-N5

NOT SPECIFIED

NOT SPECIFIED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.