Infineon Technologies - SPD07N20GBTMA1

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SPD07N20GBTMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SPD07N20GBTMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 28 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
Datasheet SPD07N20GBTMA1 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 7 A
Maximum Pulsed Drain Current (IDM): 28 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .4 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 120 mJ
Other Names: SPD07N20G
SPD07N20 GDKR-ND
SPD07N20 GDKR
SPD07N20 GCT
SPD07N20 GCT-ND
SP000449008
SPD07N20GBTMA1DKR
SPD07N20 G-ND
SPD07N20 GTR-ND
SPD07N20GBTMA1TR
SPD07N20GBTMA1CT
SPD07N20 G
JEDEC-95 Code: TO-252
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 200 V
Additional Features: AVALANCHE RATED
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