Power Field Effect Transistors (FET)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

UPA2735GR-E1-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

2.5 W

1

16 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

16 A

NOT SPECIFIED

NOT SPECIFIED

UPA2736GR-E1-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

2.5 W

1

14 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

14 A

NOT SPECIFIED

NOT SPECIFIED

UPA2737GR-E1-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

2.5 W

1

11 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

11 A

NOT SPECIFIED

NOT SPECIFIED

UPA2738GR-E1-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

2.5 W

1

10 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

NOT SPECIFIED

NOT SPECIFIED

UPA2812T1L-E2-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

52 W

30 V

1

30 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.0048 ohm

30 A

NOT SPECIFIED

NOT SPECIFIED

UPA2820T1S-E2-AT

Renesas Electronics

N-CHANNEL

SINGLE

YES

16 W

1

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

22 A

NOT SPECIFIED

NOT SPECIFIED

UPA2821T1L-E1-AT

Renesas Electronics

N-CHANNEL

SINGLE

YES

52 W

1

26 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

26 A

UPA2822T1L-E1-AT

Renesas Electronics

N-CHANNEL

SINGLE

YES

52 W

30 V

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.0026 ohm

34 A

NOT SPECIFIED

NOT SPECIFIED

UPA2825T1S-E2-AT

Renesas Electronics

N-CHANNEL

SINGLE

YES

16.5 W

1

24 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

24 A

NOT SPECIFIED

NOT SPECIFIED

DMN3025LFG-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

60 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.018 ohm

7.5 A

DUAL

S-PDSO-N5

1

DRAIN

HIGH RELIABILITY

e3

30

260

AEC-Q101

NTMFS4C13NT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

21.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

106 A

22 mJ

38 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.0091 ohm

7.2 A

DUAL

R-PDSO-F6

1

DRAIN

e3

30

260

127 pF

NVB5404NT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

254 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

670 A

1000 mJ

167 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0045 ohm

24 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

AEC-Q101

NVB5860NLT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

283 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

660 A

735 mJ

220 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0036 ohm

130 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

AEC-Q101

NVB60N06T4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

454 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.014 ohm

60 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

AEC-Q101

NVD3055L170T4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28.5 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

27 A

30 mJ

9 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.17 ohm

9 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

AEC-Q101

NTMFS4935NCT1G

Onsemi

93 A

FET General Purpose Power

TIN

1

e3

30

260

NTMFS4935NCT3G

Onsemi

93 A

FET General Purpose Power

TIN

1

e3

30

260

STB32NM50N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

190 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

88 A

340 mJ

22 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.13 ohm

22 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

30

245

STF25N80K5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

78 A

200 mJ

19.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.26 ohm

19.5 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

STF32NM50N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

88 A

340 mJ

22 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.13 ohm

22 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

STH260N6F6-6

STMicroelectronics

N-CHANNEL

SINGLE

YES

300 W

1

180 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

NOT SPECIFIED

NOT SPECIFIED

STH400N4F6-2

STMicroelectronics

N-CHANNEL

SINGLE

YES

300 W

1

180 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

NOT SPECIFIED

NOT SPECIFIED

STH400N4F6-6

STMicroelectronics

N-CHANNEL

SINGLE

YES

300 W

1

180 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

NOT SPECIFIED

NOT SPECIFIED

STI360N4F6

STMicroelectronics

N-CHANNEL

SINGLE

NO

300 W

1

120 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

120 A

NOT SPECIFIED

NOT SPECIFIED

STP32NM50N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

88 A

340 mJ

22 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.13 ohm

22 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

e3

STP360N4F6

STMicroelectronics

N-CHANNEL

SINGLE

NO

300 W

1

120 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

120 A

NOT SPECIFIED

NOT SPECIFIED

STP7N80K5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

88 mJ

6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

1.2 ohm

6 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

e3

STW25N80K5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

78 A

200 mJ

19.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.26 ohm

19.5 A

SINGLE

R-PSFM-T3

TO-247

e3

STW32NM50N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

88 A

340 mJ

22 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.13 ohm

22 A

SINGLE

R-PSFM-T3

TO-247

e3

STW60NM50N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

272 A

551 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.043 ohm

68 A

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

STW78N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

450 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

276 A

2000 mJ

69 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.032 ohm

69 A

SINGLE

R-PSFM-T3

TO-247

e3

AEC-Q101

NDD01N60-1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

46 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

6 A

13 mJ

1.5 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

8.5 ohm

1.5 A

SINGLE

R-PSIP-T3

3

DRAIN

e3

NDD01N60T4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

46 W

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6 A

13 mJ

1.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

8.5 ohm

1.5 A

SINGLE

R-PSSO-G2

3

DRAIN

e3

NDD02N40-1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

39 W

PLASTIC/EPOXY

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

6.9 A

120 mJ

1.7 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0055 ohm

1.7 A

SINGLE

R-PSIP-T3

3

DRAIN

e3

30

260

NDD02N40T4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

39 W

PLASTIC/EPOXY

400 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6.9 A

120 mJ

1.7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0055 ohm

1.7 A

SINGLE

R-PSSO-G2

3

DRAIN

e3

30

260

NDT01N60T1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.5 A

13 mJ

.4 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

8.5 ohm

.4 A

DUAL

R-PDSO-G4

1

DRAIN

TO-261AA

e3

30

260

NVMD6N03R2G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

30 A

325 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.032 ohm

6 A

DUAL

R-PDSO-G8

1

ULTRA LOW ON RESISTANCE

e3

30

260

AEC-Q101

NVMFD5873NLT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

107 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

190 A

40 mJ

58 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.013 ohm

10 A

DUAL

R-PDSO-F6

1

DRAIN

e3

30

260

AEC-Q101

STD30NF04LT

STMicroelectronics

N-CHANNEL

SINGLE

YES

50 W

1

30 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

30 A

1

e3

260

STH110N10F7-2

STMicroelectronics

N-CHANNEL

SINGLE

YES

150 W

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NOT SPECIFIED

NOT SPECIFIED

STH110N10F7-6

STMicroelectronics

N-CHANNEL

SINGLE

YES

150 W

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NOT SPECIFIED

NOT SPECIFIED

STH270N8F7-2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

315 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

720 A

1160 mJ

180 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0021 ohm

180 A

SINGLE

R-PSSO-G2

1

DRAIN

ULTRA LOW RESISTANCE

STL20DN10F7

STMicroelectronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

62.5 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

20 A

20 A

6

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.067 ohm

12.3 A

DUAL

R-PDSO-F6

DRAIN

NOT SPECIFIED

NOT SPECIFIED

STL51N3LLH5

STMicroelectronics

N-CHANNEL

SINGLE

YES

62.5 W

1

51 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

51 A

NOT SPECIFIED

NOT SPECIFIED

STP110N55F6

STMicroelectronics

N-CHANNEL

SINGLE

NO

150 W

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

110 A

e3

UPA2630T1R-E2-AX

Renesas Electronics

P-CHANNEL

SINGLE

YES

2.5 W

1

7 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

7 A

e4

260

UPA2631T1R-E2-AX

Renesas Electronics

P-CHANNEL

SINGLE

YES

2.5 W

1

6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

6 A

e4

260

NVD3055-150T4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28.8 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

27 A

30 mJ

9 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

28.8 W

175 Cel

SILICON

105 ns

-55 Cel

75 ns

MATTE TIN

.15 ohm

9 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

40 pF

AEC-Q101

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.