Power Field Effect Transistors (FET)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NP80N04NLG-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

115 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

80 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0048 ohm

80 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

NP80N04PLG-E1B-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

115 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0045 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

NP80N04PUG-E1B-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

115 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0045 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

NP80N055MDG-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

115 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0069 ohm

80 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

NP80N06PLG-E1B-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

115 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0083 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

NP82N04MDG-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

143 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

328 A

82 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0085 ohm

82 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

NP82N055MUG-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

143 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

328 A

82 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.006 ohm

82 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

NP82N055NUG-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

143 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

328 A

82 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.006 ohm

82 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

NP90N04VUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.004 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252

NOT SPECIFIED

NOT SPECIFIED

NP90N06VLG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0078 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252

NOT SPECIFIED

NOT SPECIFIED

NDD02N60Z-1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

57 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

9 A

120 mJ

2.2 A

3

IN-LINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

4.8 ohm

2.2 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

e3

30

260

NDF06N60ZH

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

113 mJ

7.1 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

1.2 ohm

7.1 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

NTP5863NG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

383 A

157 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0078 ohm

97 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

CSD16323Q3C

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

112 A

125 mJ

60 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0072 ohm

21 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

30

260

CSD17506Q5A

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.2 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

150 A

259 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0053 ohm

23 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

30

260

65 pF

NTP5864NG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

107 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

252 A

80 mJ

63 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.0124 ohm

63 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

NP180N055TUJ-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

348 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

720 A

180 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0023 ohm

180 A

SINGLE

R-PSSO-G6

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NP90N03VHG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0032 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

NP90N03VLG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0032 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252

NOT SPECIFIED

NOT SPECIFIED

SIA444DJT-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

19 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

40 A

12 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.017 ohm

12 A

DUAL

S-PDSO-N3

DRAIN

Not Qualified

e3

260

SIS478DN-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15.6 W

PLASTIC/EPOXY

SWITCHING

30 V

C BEND

SQUARE

ENHANCEMENT MODE

1

40 A

5 mJ

12 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.02 ohm

12 A

DUAL

S-PDSO-C5

DRAIN

Not Qualified

e3

40

260

SQM120N03-1M5L_GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

480 A

336 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0015 ohm

120 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

VS-FB190SA10

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

568 W

PLASTIC/EPOXY

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

720 A

700 mJ

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0065 ohm

190 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

FQD3P50TM_F085

Fairchild Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8.4 A

250 mJ

2.1 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

4.9 ohm

2.1 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

NP180N04TUJ-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

720 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0015 ohm

180 A

SINGLE

R-PSSO-G6

DRAIN

Not Qualified

TO-263

NOT SPECIFIED

NOT SPECIFIED

NP40N10PDF-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

61 mJ

40 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.038 ohm

40 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

NP40N10VDF-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.2 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

61 mJ

40 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.037 ohm

40 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252

NOT SPECIFIED

NOT SPECIFIED

NP40N10VDF-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.2 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

61 mJ

40 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.037 ohm

40 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252

NOT SPECIFIED

NOT SPECIFIED

NP40N10YDF-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

80 A

61 mJ

40 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Pure Tin (Sn)

.036 ohm

40 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

NTD2955PT4G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

55 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

216 mJ

12 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.18 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

NTD4959NH-35G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

130 A

112.5 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0125 ohm

9 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

e3

NTD4959NHT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

130 A

112.5 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0125 ohm

9 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

260

IPA50R380CE

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

210 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.38 ohm

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

IPD60R1K4C6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28.4 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

26 mJ

3.2 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

1.4 ohm

3.2 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

260

IPD60R3K3C6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

18.1 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

6 mJ

1.7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

3.3 ohm

1.7 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

260

NTBV5605T4G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

88 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

55 A

338 mJ

18.5 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.14 ohm

18.5 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

NTDV18N06LT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

55 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

54 A

72 mJ

18 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

55 W

175 Cel

SILICON

180 ns

-55 Cel

120 ns

Tin (Sn)

.065 ohm

18 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

80 pF

AEC-Q101

NTDV20P06LT4G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

65 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

50 A

304 mJ

15.5 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

200 ns

-55 Cel

185 ns

MATTE TIN

.15 ohm

15.5 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

120 pF

AEC-Q101

NTMFS4933NT1G

Onsemi

210 A

FET General Purpose Power

MATTE TIN

1

e3

30

260

STD3PK50Z

STMicroelectronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

11.2 A

2.8 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

4 ohm

2.8 A

SINGLE

R-PSSO-G2

1

TO-252

e3

30

260

STD65N3LLH5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

260 A

65 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0097 ohm

65 A

SINGLE

R-PSSO-G2

DRAIN

ULTRA-LOW RESISTANCE

TO-252

NOT SPECIFIED

NOT SPECIFIED

STFI20NK50Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

68 A

850 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.27 ohm

17 A

SINGLE

R-PSIP-T3

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

STU65N3LLH5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

50 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

260 A

65 A

3

IN-LINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0097 ohm

65 A

SINGLE

R-PSIP-T3

DRAIN

ULTRA-LOW RESISTANCE

TO-251

NOT SPECIFIED

NOT SPECIFIED

STB11N52K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

525 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

170 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.51 ohm

10 A

SINGLE

R-PSSO-G2

ULTRA-LOW RESISTANCE

TO-263AB

STB16N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

48 A

200 mJ

12 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.279 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

ULTRA-LOW RESISTANCE

TO-263AB

e3

30

245

STB23NM50N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

68 A

254 mJ

17 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.19 ohm

17 A

SINGLE

R-PSSO-G2

1

TO-263AB

e3

30

245

STB5N62K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

620 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

16.8 A

120 mJ

4.2 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.6 ohm

4.2 A

SINGLE

R-PSSO-G2

1

ULTRA LOW-ON RESISTANCE

TO-263AB

e3

30

245

STD3LN62K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

620 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

90 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

3 ohm

2.5 A

SINGLE

R-PSSO-G2

ULTRA-LOW RESISTANCE

TO-252

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.