Power Field Effect Transistors (FET)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BLP7G07S-140P,118

NXP Semiconductors

N-CHANNEL

YES

ENHANCEMENT MODE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

PMZB790SN,315

NXP Semiconductors

N-CHANNEL

SINGLE

YES

2.7 W

ENHANCEMENT MODE

1

.65 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.65 A

1

e3

30

260

NX3020NAKT,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.285 W

ENHANCEMENT MODE

1

.18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.18 A

1

e3

30

260

PMGD130UN,115

NXP Semiconductors

N-CHANNEL

YES

.39 W

ENHANCEMENT MODE

1.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

1.3 A

1

e3

30

260

PSMN5R0-100XS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

63.8 W

ENHANCEMENT MODE

1

67.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

67.5 A

PSMN4R6-100XS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

63.8 W

ENHANCEMENT MODE

1

70.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

70.4 A

PSMN023-40YLCX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

25 W

ENHANCEMENT MODE

1

24 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

24 A

BUK754R7-60E,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

234 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

e3

BUK9515-60E,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

96 W

ENHANCEMENT MODE

1

54 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

54 A

e3

BUK753R5-60E,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

293 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

e3

BUK956R1-100E,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

349 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

e3

PMZB380XN,315

NXP Semiconductors

N-CHANNEL

SINGLE

YES

2.7 W

ENHANCEMENT MODE

1

.93 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.93 A

1

e3

30

260

BUK9E1R8-40E,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

349 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

120 A

PMZB420UN,315

NXP Semiconductors

N-CHANNEL

SINGLE

YES

2.7 W

ENHANCEMENT MODE

1

.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.9 A

1

e3

30

260

PMDPB70EN,115

NXP Semiconductors

N-CHANNEL

YES

8.33 W

ENHANCEMENT MODE

3.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

3.5 A

1

e3

30

260

PMPB40SNA,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

3.5 W

ENHANCEMENT MODE

1

12.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

12.9 A

1

e3

30

260

BUK952R8-60E,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

349 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

e3

PMV170UN,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

1.14 W

ENHANCEMENT MODE

1

1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

1 A

1

e3

30

260

PMDPB42UN,115

NXP Semiconductors

N-CHANNEL

YES

8.33 W

ENHANCEMENT MODE

3.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.9 A

BUK7514-60E,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

96 W

ENHANCEMENT MODE

1

58 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

58 A

e3

PMV185XN,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

1.275 W

ENHANCEMENT MODE

1

1.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.1 A

PMF77XN,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.35 W

ENHANCEMENT MODE

1

1.63 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.63 A

PMZB300XN,315

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.715 W

ENHANCEMENT MODE

1

1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

1 A

1

e3

30

260

3SK291(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.15 W

1

.03 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

125 Cel

.03 A

HN4K03JU(TE85L,F)

Toshiba

N-CHANNEL

YES

.2 W

ENHANCEMENT MODE

.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

SSM3K303T(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.7 W

ENHANCEMENT MODE

1

2.9 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.9 A

SSM3K106TU(TE85L)

Toshiba

N-CHANNEL

SINGLE

YES

.8 W

ENHANCEMENT MODE

1

1.2 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.2 A

SSM3K15CT(TPL3)

Toshiba

N-CHANNEL

SINGLE

YES

.1 W

ENHANCEMENT MODE

1

.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

SSM3K16CT(TPL3)

Toshiba

N-CHANNEL

SINGLE

YES

.1 W

ENHANCEMENT MODE

1

.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

SSM3K309T(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.7 W

ENHANCEMENT MODE

1

4.7 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.7 A

SSM3K302T(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.7 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

PMT760EN,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

6.2 W

ENHANCEMENT MODE

1

.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.9 A

PMT760EN,135

NXP Semiconductors

N-CHANNEL

SINGLE

YES

6.2 W

ENHANCEMENT MODE

1

.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.9 A

2SK1828(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.05 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.05 A

PSMN8R5-100XSQ

NXP Semiconductors

N-CHANNEL

SINGLE

NO

55 W

ENHANCEMENT MODE

1

49 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

49 A

2SK2034(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.1 W

ENHANCEMENT MODE

1

.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

2SK1829(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.1 W

ENHANCEMENT MODE

1

.05 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.05 A

PMG45UN,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.715 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

VNP49N04-E

STMicroelectronics

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

68 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

68 A

e3

VNV28N04TR-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

83 W

ENHANCEMENT MODE

1

28 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

28 A

3

e3

30

250

VNB28N04-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

83 W

ENHANCEMENT MODE

1

28 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

28 A

3

e3

30

245

VNB28N04TR-E

STMicroelectronics

N-CHANNEL

SINGLE

YES

83 W

ENHANCEMENT MODE

1

28 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

28 A

3

e3

30

245

FW811-TL-E

Onsemi

N-CHANNEL

YES

2.2 W

ENHANCEMENT MODE

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

8 A

1

e6

BLF3G21-6,135

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

2.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

2.3 A

BLF1043,135

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

2.2 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

200 Cel

2.2 A

VNB20N07-E

STMicroelectronics

N-CHANNEL

COMPLEX

YES

83 W

PLASTIC/EPOXY

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

580 ns

1100 ns

.07 ohm

SINGLE

R-PSSO-G2

TO-263

2SK4099LS-1E

Onsemi

N-CHANNEL

SINGLE

NO

35 W

ENHANCEMENT MODE

1

8.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

8.5 A

e3

SSM5H12TU(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.8 W

ENHANCEMENT MODE

1

1.9 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

125 Cel

1.9 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.