NXP Semiconductors - BLF6G22L-40P,112

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BLF6G22L-40P,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF6G22L-40P,112
Description N-CHANNEL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 16 A; Peak Reflow Temperature (C): 260; Maximum Drain Current (ID): 16 A; Maximum Time At Peak Reflow Temperature (s): 30;
Datasheet BLF6G22L-40P,112 Datasheet
NAME DESCRIPTION
Other Names: 934065325112
Maximum Time At Peak Reflow Temperature (s): 30
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 200 Cel
Maximum Drain Current (ID): 16 A
Maximum Drain Current (Abs) (ID): 16 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): 260
Polarity or Channel Type: N-CHANNEL
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