Other Function Transistors

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	Sub-Category	Field Effect Transistor Technology	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	Moisture Sensitivity Level (MSL)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
PMN40UPE,115	NXP Semiconductors	P-CHANNEL	SINGLE	YES		8.33 W		ENHANCEMENT MODE	1	6 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	TIN	6 A	1	e3	30	260
PMN27XPE,115	NXP Semiconductors	P-CHANNEL	SINGLE	YES		8.33 W		ENHANCEMENT MODE	1	4.4 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	TIN	4.4 A	1	e3	30	260
PMN50UPE,115	NXP Semiconductors	P-CHANNEL	SINGLE	YES		5 W		ENHANCEMENT MODE	1	3.6 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	TIN	3.6 A	1	e3	30	260
MT3S113P(TE12L,F)	Toshiba	NPN	SINGLE	YES	5500 MHz	1.6 W	.1 A		1		Other Transistors		200	150 Cel
2SC5095O(TE85L,F)	Toshiba	NPN	SINGLE	YES	7000 MHz	.1 W	.015 A		1		Other Transistors		80	125 Cel
2SC5087Y(TE85L,F)	Toshiba	NPN	SINGLE	YES	5000 MHz	.15 W	.08 A		1		Other Transistors		120	125 Cel
2SC5085Y(TE85L,F)	Toshiba	NPN	SINGLE	YES	5000 MHz	.1 W	.08 A		1		Other Transistors		120	125 Cel
SSM3J129TU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		1 W		ENHANCEMENT MODE	1	4.6 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		4.6 A
SSM3J15CT(TPL3)	Toshiba	P-CHANNEL	SINGLE	YES		.1 W		ENHANCEMENT MODE	1	.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.1 A
SSM3J14T(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		1.25 W		ENHANCEMENT MODE	1	2.7 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		2.7 A
SSM3J118TU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1.4 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		1.4 A
SSM3J306T(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		.7 W		ENHANCEMENT MODE	1	2.4 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		2.4 A
SSM3J307T(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		1.25 W		ENHANCEMENT MODE	1	5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		5 A
SSM3J321T(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		1.25 W		ENHANCEMENT MODE	1	5.2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		5.2 A
SSM3J108TU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1.8 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		1.8 A
SSM6J206FE(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		.5 W		ENHANCEMENT MODE	1	2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		2 A
SSM6L11TU(TE85L,F)	Toshiba	N-CHANNEL AND P-CHANNEL		YES		.5 W		ENHANCEMENT MODE		.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.5 A
PMFPB8040XP,115	NXP Semiconductors	P-CHANNEL	SINGLE	YES		6.25 W		ENHANCEMENT MODE	1	3.7 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	TIN	3.7 A	1	e3	30	260
TIP47-S	Bourns	NPN	SINGLE	NO		40 W	1 A		1		Other Transistors		30	150 Cel
SSM5G10TU(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		125 Cel		1.5 A
HN1C03FU-A(TE85L,F)	Toshiba	NPN	SINGLE	YES		.2 W	.3 A		1		Other Transistors		200	150 Cel
2SA1483Y(TE12L,F)	Toshiba	PNP	SINGLE	YES	100 MHz	1 W	.2 A		1		Other Transistors		120	150 Cel
2SA1987O(Q)	Toshiba	PNP	SINGLE	NO		180 W	15 A		1		Other Transistors		80	150 Cel
2SC5200O(Q)	Toshiba	NPN	SINGLE	NO		150 W	15 A		1		Other Transistors		80	150 Cel					30	260
BD244B-S	Bourns	PNP	SINGLE	NO		65 W	6 A		1		Other Transistors		15	150 Cel
BD244C-S	Bourns	PNP	SINGLE	NO		65 W	6 A		1		Other Transistors		15	150 Cel
TTC008(Q)	Toshiba	NPN	SINGLE	NO		1.1 W	1.5 A		1		Other Transistors		80	150 Cel
TTA0002(Q)	Toshiba	PNP	SINGLE	NO		180 W	18 A		1		Other Transistors		80	150 Cel
TTC012(Q)	Toshiba	NPN	SINGLE	NO		1.1 W	2 A		1		Other Transistors		80	150 Cel
NE3520S03-A	Renesas Electronics	N-CHANNEL		YES		.165 W					Other Transistors	JUNCTION		125 Cel
NE3513M04-A	Renesas Electronics	N-CHANNEL		YES		.125 W					Other Transistors	JUNCTION		125 Cel
NTZD3158PT1G	Onsemi	P-CHANNEL		YES		.28 W		ENHANCEMENT MODE		.43 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	MATTE TIN	.43 A	1	e3	30	260
NTLUS3A40PZCTAG	Onsemi	P-CHANNEL	SINGLE	YES		3.8 W		ENHANCEMENT MODE	1	6.4 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	TIN	6.4 A	1	e3	30	260
NTLUS3A39PZCTBG	Onsemi	P-CHANNEL	SINGLE	YES		2.3 W		ENHANCEMENT MODE	1	5.2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	TIN	5.2 A	1	e3	30	260
NJW44H11G	Onsemi	NPN	SINGLE	NO		120 W	10 A		1		Other Transistors		80	150 Cel	Matte Tin (Sn) - annealed			e3
FW705-TL-E	Onsemi	P-CHANNEL		YES		2.5 W		ENHANCEMENT MODE		6 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	TIN BISMUTH	6 A	1	e6
2SJ665-DL-E	Onsemi	P-CHANNEL	SINGLE	YES		65 W		ENHANCEMENT MODE	1	27 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	TIN BISMUTH	27 A		e6
2SC2812-5-TB-E	Onsemi	NPN	SINGLE	YES		.2 W	.15 A		1		Other Transistors		135	150 Cel	Tin/Bismuth (Sn/Bi)		1	e6
2SA1855S-AY	Onsemi	PNP	SINGLE	NO		1.5 W	4 A		1		Other Transistors		140	150 Cel	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
2SC4837S-AY	Onsemi	NPN	SINGLE	NO		1.5 W	4 A		1		Other Transistors		140	150 Cel	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
5HP01C-TB-H	Onsemi	P-CHANNEL	SINGLE	YES		.25 W		ENHANCEMENT MODE	1	.07 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	Tin/Bismuth (Sn/Bi)	.07 A	1	e6
BCX5416H6327XTSA1	Infineon Technologies	NPN	SINGLE	YES		2 W	1 A		1		Other Transistors		100	150 Cel	TIN		1	e3		245
BCX55H6327XTSA1	Infineon Technologies	NPN	SINGLE	YES		2 W	1 A		1		Other Transistors		40	150 Cel	TIN		1	e3
BCX56H6327XTSA1	Infineon Technologies	NPN	SINGLE	YES		2 W	1 A		1		Other Transistors		40	150 Cel	TIN		1	e3
BCP5116H6433XTMA1	Infineon Technologies	PNP	SINGLE	YES		2 W	1 A		1		Other Transistors		100	150 Cel			1
J108,126	NXP Semiconductors	N-CHANNEL		NO		.4 W					Other Transistors	JUNCTION		150 Cel
J110,126	NXP Semiconductors	N-CHANNEL		NO		.4 W					Other Transistors	JUNCTION		150 Cel
J111,126	NXP Semiconductors	N-CHANNEL		NO		.4 W					Other Transistors	JUNCTION		150 Cel

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.