| Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXP Semiconductors |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3.3 V |
.025 us |
10 uA |
1 |
FLANGE MOUNT |
600 V |
175 Cel |
HYPER FAST RECOVERY POWER |
R-PSFM-T2 |
CATHODE |
LOW LEAKAGE CURRENT |
1 |
TO-220AC |
65 A |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 V |
.05 us |
10 uA |
1 |
FLANGE MOUNT |
600 V |
175 Cel |
ULTRA FAST SOFT RECOVERY POWER |
R-PSFM-T2 |
CATHODE |
LOW LEAKAGE CURRENT |
1 |
TO-220AC |
88 A |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 V |
.05 us |
AVALANCHE |
10 uA |
1 |
FLANGE MOUNT |
600 V |
175 Cel |
ULTRA FAST SOFT RECOVERY POWER |
R-PSFM-T2 |
ISOLATED |
LOW LEAKAGE CURRENT |
1 |
TO-220AC |
83 A |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1.25 V |
.075 us |
10 uA |
1 |
LONG FORM |
600 V |
175 Cel |
HIGH VOLTAGE ULTRA FAST SOFT RECOVERY POWER |
O-PALF-W2 |
ISOLATED |
LOW LEAKAGE CURRENT |
1 |
DO-201AD |
110 A |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1.25 V |
.075 us |
10 uA |
1 |
LONG FORM |
600 V |
175 Cel |
HIGH VOLTAGE ULTRA FAST SOFT RECOVERY POWER |
O-PALF-W2 |
ISOLATED |
LOW LEAKAGE CURRENT |
1 |
DO-201AD |
110 A |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||||
|
|
Wolfspeed |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
43 A |
1.8 V |
SCHOTTKY |
95 uA |
1 |
650 V |
FLANGE MOUNT |
650 V |
175 Cel |
EFFICIENCY |
-55 Cel |
R-PSFM-T3 |
CATHODE |
173 W |
FREE WHEELING DIODE, PD-CASE |
1 |
TO-247 |
148 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON CARBIDE |
||||||||||||||||||||||||
|
|
Diodes Incorporated |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
10 A |
.57 V |
SCHOTTKY |
200 uA |
2 |
60 V |
FLANGE MOUNT |
60 V |
150 Cel |
FAST SOFT RECOVERY |
-55 Cel |
MATTE TIN |
R-PSFM-T3 |
FREE WHEELING DIODE |
1 |
TO-220AB |
60 V |
200 A |
e3 |
260 |
SILICON |
||||||||||||||||||||||||
|
|
Diodes Incorporated |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
20 A |
.6 V |
SCHOTTKY |
200 uA |
2 |
60 V |
FLANGE MOUNT |
60 V |
150 Cel |
FAST SOFT RECOVERY |
-55 Cel |
MATTE TIN |
R-PSFM-T3 |
FREE WHEELING DIODE |
1 |
TO-220AB |
300 A |
e3 |
260 |
SILICON |
|||||||||||||||||||||||||
|
|
Genesic Semiconductor |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
4 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 2 ELEMENTS |
228 A |
1.8 V |
SCHOTTKY |
50 uA |
2 |
FLANGE MOUNT |
1200 V |
175 Cel |
EFFICIENCY |
-55 Cel |
R-PUFM-X4 |
ISOLATED |
1554 W |
FREE WHEELING DIODE, PD-CASE |
1 |
640 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON CARBIDE |
||||||||||||||||||||||||||
|
|
Micro Commercial Components |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
15 A |
1.65 V |
.035 us |
3 uA |
1 |
600 V |
FLANGE MOUNT |
600 V |
175 Cel |
EFFICIENCY |
-55 Cel |
R-PSFM-T2 |
CATHODE |
1 |
TO-220AC |
600 V |
180 A |
SILICON |
|||||||||||||||||||||||||||
|
|
Micro Commercial Components |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
15 A |
.88 V |
SCHOTTKY |
10 uA |
2 |
200 V |
FLANGE MOUNT |
200 V |
175 Cel |
GENERAL PURPOSE |
-55 Cel |
R-PSFM-T3 |
CATHODE |
1 |
TO-220AB |
200 V |
250 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||
|
|
Diodes Incorporated |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
15 A |
.6 V |
SCHOTTKY |
200 uA |
2 |
60 V |
FLANGE MOUNT |
60 V |
150 Cel |
FAST SOFT RECOVERY |
-55 Cel |
MATTE TIN |
R-PSFM-T3 |
FREE WHEELING DIODE |
1 |
TO-220AB |
200 A |
e3 |
260 |
SILICON |
|||||||||||||||||||||||||
|
|
STMicroelectronics |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
30 A |
.94 V |
SCHOTTKY |
60 uA |
2 |
170 V |
FLANGE MOUNT |
170 V |
HIGH VOLTAGE |
R-PSFM-T3 |
FREE WHEELING DIODE |
1 |
TO-247AD |
500 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||||
|
|
STMicroelectronics |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
40 A |
.96 V |
SCHOTTKY |
80 uA |
2 |
170 V |
FLANGE MOUNT |
170 V |
GENERAL PURPOSE |
-40 Cel |
R-PSFM-T3 |
LOW LEAKAGE CURRENT |
1 |
TO-247AD |
500 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
AEC-Q101 |
||||||||||||||||||||||||||
|
|
STMicroelectronics |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
30 A |
2.95 V |
.055 us |
40 uA |
1 |
600 V |
FLANGE MOUNT |
600 V |
175 Cel |
HIGH VOLTAGE ULTRA FAST SOFT RECOVERY |
R-PSFM-T2 |
CATHODE |
FREE WHEELING DIODE |
1 |
DO-247 |
200 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
|
|
STMicroelectronics |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
60 A |
2.95 V |
.065 us |
80 uA |
1 |
600 V |
FLANGE MOUNT |
600 V |
175 Cel |
HIGH VOLTAGE ULTRA FAST SOFT RECOVERY |
R-PSFM-T2 |
FREE WHEELING DIODE |
1 |
DO-247 |
425 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||
|
|
STMicroelectronics |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
30 A |
2.7 V |
.05 us |
15 uA |
1 |
1200 V |
FLANGE MOUNT |
1200 V |
175 Cel |
HIGH VOLTAGE ULTRA FAST RECOVERY |
R-PSFM-T2 |
1 |
DO-247 |
180 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
8 A |
.975 V |
.035 us |
5 uA |
2 |
200 V |
FLANGE MOUNT |
200 V |
150 Cel |
ULTRA FAST RECOVERY POWER |
-65 Cel |
Matte Tin (Sn) - annealed |
R-PSFM-T3 |
ISOLATED |
FREE WHEELING DIODE |
1 |
TO-220AB |
100 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
|
Infineon Technologies |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
10 A |
1.7 V |
SCHOTTKY |
60 uA |
1 |
650 V |
FLANGE MOUNT |
650 V |
175 Cel |
EFFICIENCY |
-40 Cel |
TIN |
R-PSFM-T3 |
CATHODE |
65 W |
PD-CASE |
1 |
TO-247 |
431 A |
e3 |
SILICON CARBIDE |
AEC-Q101 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
12 A |
1.7 V |
SCHOTTKY |
70 uA |
1 |
650 V |
FLANGE MOUNT |
650 V |
175 Cel |
EFFICIENCY |
-40 Cel |
TIN |
R-PSFM-T3 |
CATHODE |
76 W |
PD-CASE |
1 |
TO-247 |
56 A |
e3 |
SILICON CARBIDE |
AEC-Q101 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
16 A |
1.7 V |
SCHOTTKY |
90 uA |
1 |
650 V |
FLANGE MOUNT |
650 V |
175 Cel |
EFFICIENCY |
-40 Cel |
TIN |
R-PSFM-T3 |
CATHODE |
94 W |
PD-CASE |
1 |
TO-247 |
74 A |
e3 |
SILICON CARBIDE |
AEC-Q101 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
20 A |
1.7 V |
SCHOTTKY |
120 uA |
1 |
650 V |
FLANGE MOUNT |
650 V |
175 Cel |
EFFICIENCY |
-40 Cel |
TIN |
R-PSFM-T3 |
CATHODE |
112 W |
PD-CASE |
1 |
TO-247 |
87 A |
e3 |
SILICON CARBIDE |
AEC-Q101 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
30 A |
1.7 V |
SCHOTTKY |
120 uA |
1 |
650 V |
FLANGE MOUNT |
650 V |
175 Cel |
EFFICIENCY |
-40 Cel |
TIN |
R-PSFM-T3 |
CATHODE |
150 W |
PD-CASE |
1 |
TO-247 |
139 A |
e3 |
SILICON CARBIDE |
AEC-Q101 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
40 A |
1.7 V |
SCHOTTKY |
120 uA |
1 |
650 V |
FLANGE MOUNT |
650 V |
175 Cel |
EFFICIENCY |
-40 Cel |
TIN |
R-PSFM-T3 |
CATHODE |
183 W |
PD-CASE |
1 |
TO-247 |
153 A |
e3 |
SILICON CARBIDE |
AEC-Q101 |
|||||||||||||||||||||||
|
|
Infineon Technologies |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
3 |
NO |
RECTANGULAR |
UNSPECIFIED |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
273 A |
1.39 V |
1000 uA |
2 |
1600 V |
FLANGE MOUNT |
1600 V |
150 Cel |
GENERAL PURPOSE |
R-XUFM-X3 |
ISOLATED |
1 |
4800 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
|
Infineon Technologies |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
3 |
NO |
RECTANGULAR |
UNSPECIFIED |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
273 A |
1.39 V |
1000 uA |
2 |
2200 V |
FLANGE MOUNT |
2200 V |
150 Cel |
GENERAL PURPOSE |
R-XUFM-X3 |
ISOLATED |
1 |
4800 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
UL RECOGNIZED |
||||||||||||||||||||||||||||
|
|
Infineon Technologies |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
3 |
NO |
RECTANGULAR |
UNSPECIFIED |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
390 A |
1.34 V |
1000 uA |
2 |
1600 V |
FLANGE MOUNT |
1600 V |
125 Cel |
GENERAL PURPOSE |
-40 Cel |
R-XUFM-X3 |
ISOLATED |
1 |
8400 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
UL RECOGNIZED |
|||||||||||||||||||||||||||
|
|
Infineon Technologies |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
3 |
NO |
RECTANGULAR |
UNSPECIFIED |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
390 A |
1.34 V |
1000 uA |
2 |
2200 V |
FLANGE MOUNT |
2200 V |
125 Cel |
GENERAL PURPOSE |
-40 Cel |
R-XUFM-X3 |
ISOLATED |
1 |
8400 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||
|
|
Infineon Technologies |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
56 A |
1.75 V |
.112 us |
40 uA |
2 |
650 V |
FLANGE MOUNT |
650 V |
175 Cel |
GENERAL PURPOSE |
-40 Cel |
TIN |
R-PSFM-T3 |
ISOLATED |
100 W |
1 |
TO-247 |
240 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
15 A |
3.2 V |
.075 us |
AVALANCHE |
100 uA |
1 |
1200 V |
FLANGE MOUNT |
1200 V |
175 Cel |
HYPERFAST SOFT RECOVERY |
-65 Cel |
Matte Tin (Sn) - annealed |
R-PSFM-T2 |
CATHODE |
100 W |
FREE WHEELING DIODE |
1 |
TO-220AC |
200 A |
e3 |
SILICON |
|||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
15 A |
2.1 V |
.04 us |
AVALANCHE |
100 uA |
1 |
600 V |
FLANGE MOUNT |
600 V |
175 Cel |
HYPER ULTRA FAST SOFT RECOVERY |
-65 Cel |
Matte Tin (Sn) - annealed |
R-PSFM-T2 |
CATHODE |
100 W |
FREE WHEELING DIODE, HIGH RELIABILITY, PD-CASE |
1 |
TO-220AC |
200 A |
e3 |
SILICON NITRIDE |
|||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
30 A |
3.2 V |
.085 us |
AVALANCHE |
250 uA |
1 |
1200 V |
FLANGE MOUNT |
1200 V |
175 Cel |
HYPERFAST SOFT RECOVERY |
-65 Cel |
Matte Tin (Sn) - annealed |
R-PSFM-T2 |
CATHODE |
125 W |
FREE WHEELING DIODE, PD-CASE |
1 |
TO-220AC |
300 A |
e3 |
SILICON |
|||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
30 A |
2.1 V |
.045 us |
AVALANCHE |
250 uA |
1 |
600 V |
FLANGE MOUNT |
600 V |
175 Cel |
HYPER ULTRA FAST SOFT RECOVERY |
-65 Cel |
Matte Tin (Sn) - annealed |
R-PSFM-T2 |
125 W |
FREE WHEELING DIODE, HIGH RELIABILITY |
1 |
TO-220AC |
325 A |
e3 |
SILICON NITRIDE |
||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
8 A |
3.2 V |
.07 us |
AVALANCHE |
100 uA |
1 |
1200 V |
FLANGE MOUNT |
1200 V |
175 Cel |
HYPERFAST SOFT RECOVERY |
-65 Cel |
Matte Tin (Sn) - annealed |
R-PSFM-T2 |
CATHODE |
75 W |
FREE WHEELING DIODE |
1 |
TO-220AC |
100 A |
e3 |
SILICON |
|||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
15 A |
1.8 V |
.45 us |
AVALANCHE |
100 uA |
1 |
1000 V |
FLANGE MOUNT |
1000 V |
175 Cel |
ULTRA FAST SOFT RECOVERY |
-55 Cel |
Matte Tin (Sn) - annealed |
R-PSFM-T2 |
CATHODE |
FREE WHEELING DIODE |
1 |
TO-220AC |
45 A |
e3 |
SILICON NITRIDE |
AEC-Q101 |
|||||||||||||||||||||||
|
|
ROHM |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
5 A |
.58 V |
SCHOTTKY |
300 uA |
2 |
60 V |
FLANGE MOUNT |
60 V |
150 Cel |
GENERAL PURPOSE |
R-PSFM-T3 |
ISOLATED |
HIGH RELIABILITY |
1 |
TO-220AB |
100 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||
|
|
Infineon Technologies |
RECTIFIER DIODE |
UPPER |
UNSPECIFIED |
2 |
NO |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
1100 A |
1.11 V |
80000 uA |
1 |
2200 V |
FLANGE MOUNT |
2200 V |
150 Cel |
MEDIUM POWER |
-40 Cel |
R-XUFM-X2 |
ISOLATED |
HIGH RELIABILITY |
1 |
40000 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
UL RECOGNIZED |
||||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
37 A |
1.7 V |
SCHOTTKY |
40 uA |
1 |
650 V |
FLANGE MOUNT |
650 V |
175 Cel |
EFFICIENCY |
-55 Cel |
Matte Tin (Sn) - annealed |
R-PSFM-T2 |
268 W |
HIGH RELIABILITY, PD-CASE |
1 |
TO-247 |
110 A |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON CARBIDE |
AEC-Q101 |
||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
10 A |
1.7 V |
SCHOTTKY |
40 uA |
2 |
650 V |
FLANGE MOUNT |
650 V |
175 Cel |
EFFICIENCY |
-55 Cel |
Matte Tin (Sn) - annealed |
R-PSFM-T3 |
60 W |
PD-CASE |
1 |
TO-220AB |
42 A |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON CARBIDE |
AEC-Q101 |
||||||||||||||||||||||
|
|
Micro Commercial Components |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
15 A |
1.1 V |
SCHOTTKY |
30 uA |
2 |
300 V |
FLANGE MOUNT |
300 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
Matte Tin (Sn) |
R-PSFM-T3 |
CATHODE |
LOW LEAKAGE CURRENT |
1 |
TO-220AB |
110 A |
e3 |
SILICON |
|||||||||||||||||||||||||
|
|
Diodes Incorporated |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
15 A |
.72 V |
SCHOTTKY |
100 uA |
2 |
100 V |
FLANGE MOUNT |
100 V |
150 Cel |
FAST SOFT RECOVERY |
-55 Cel |
MATTE TIN |
R-PSFM-T3 |
FREE WHEELING DIODE; LOW POWER LOSS |
1 |
TO-220AB |
100 V |
200 A |
e3 |
260 |
SILICON |
||||||||||||||||||||||||
|
|
Diodes Incorporated |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
10 A |
.86 V |
SCHOTTKY |
120 uA |
2 |
120 V |
FLANGE MOUNT |
120 V |
150 Cel |
FAST SOFT RECOVERY |
-55 Cel |
MATTE TIN |
R-PSFM-T3 |
CATHODE |
FREE WHEELING DIODE |
1 |
TO-220AB |
120 V |
120 A |
e3 |
260 |
SILICON |
|||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
30 A |
1.75 V |
SCHOTTKY |
200 uA |
1 |
1200 V |
FLANGE MOUNT |
1200 V |
175 Cel |
EFFICIENCY |
-55 Cel |
Matte Tin (Sn) - annealed |
R-PSFM-T2 |
273 W |
HIGH RELIABILITY, PD-CASE |
1 |
TO-247AB |
135 A |
e3 |
SILICON CARBIDE |
AEC-Q101 |
||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
15 A |
1.75 V |
SCHOTTKY |
200 uA |
2 |
1200 V |
FLANGE MOUNT |
1200 V |
175 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PSFM-T3 |
CATHODE |
150 W |
HIGH RELIABILITY, PD-CASE |
1 |
TO-247AB |
96 A |
SILICON CARBIDE |
AEC-Q101 |
||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
10 A |
1.7 V |
SCHOTTKY |
40 uA |
2 |
650 V |
FLANGE MOUNT |
650 V |
175 Cel |
EFFICIENCY |
-55 Cel |
Matte Tin (Sn) - annealed |
R-PSFM-T3 |
CATHODE |
65 W |
HIGH RELIABILITY, PD-CASE |
1 |
TO-247AB |
42 A |
e3 |
SILICON CARBIDE |
AEC-Q101 |
|||||||||||||||||||||||
|
|
Littelfuse |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
44 A |
1.8 V |
SCHOTTKY |
100 uA |
1 |
1200 V |
FLANGE MOUNT |
1200 V |
175 Cel |
EFFICIENCY |
-55 Cel |
R-PSFM-T2 |
CATHODE |
214 W |
1 |
TO-220AC |
120 A |
SILICON CARBIDE |
|||||||||||||||||||||||||||
|
|
Littelfuse |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
54.5 A |
1.8 V |
SCHOTTKY |
100 uA |
1 |
1200 V |
FLANGE MOUNT |
1200 V |
175 Cel |
EFFICIENCY |
-55 Cel |
R-PSFM-T2 |
CATHODE |
250 W |
PD-CASE |
1 |
TO-220AC |
140 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON CARBIDE |
||||||||||||||||||||||||
|
|
Littelfuse |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
24.5 A |
1.8 V |
SCHOTTKY |
100 uA |
1 |
1200 V |
FLANGE MOUNT |
1200 V |
175 Cel |
EFFICIENCY |
-55 Cel |
R-PSFM-T2 |
CATHODE |
125 W |
1 |
TO-220AC |
65 A |
SILICON CARBIDE |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.