| Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Onsemi |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
61 A |
1.75 V |
SCHOTTKY |
200 uA |
1 |
1200 V |
UNCASED CHIP |
1200 V |
175 Cel |
EFFICIENCY |
-55 Cel |
S-XUUC-N1 |
682 W |
1 |
270 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON CARBIDE |
|||||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
77 A |
1.75 V |
SCHOTTKY |
200 uA |
1 |
1200 V |
UNCASED CHIP |
1200 V |
175 Cel |
EFFICIENCY |
-55 Cel |
S-XUUC-N1 |
736 W |
PD-CASE |
1 |
280 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON CARBIDE |
||||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
3 A |
1 V |
.03 us |
AVALANCHE |
100 uA |
2 |
200 V |
SMALL OUTLINE |
200 V |
175 Cel |
ULTRA FAST SOFT RECOVERY |
-65 Cel |
MATTE TIN |
R-PSSO-G2 |
1 |
CATHODE |
45 W |
FREE WHEELING DIODE |
1 |
TO-252AA |
60 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
6 A |
1.5 V |
.083 us |
AVALANCHE |
100 uA |
1 |
600 V |
SMALL OUTLINE |
600 V |
175 Cel |
ULTRA FAST SOFT RECOVERY POWER |
-55 Cel |
MATTE TIN |
R-PSSO-G2 |
1 |
FREE WHEELING DIODE |
1 |
TO-252AA |
60 A |
e3 |
30 |
260 |
SILICON NITRIDE |
AEC-Q101 |
|||||||||||||||||||||
|
|
ROHM |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
.12 A |
1 V |
SCHOTTKY |
10 uA |
2 |
40 V |
SMALL OUTLINE |
40 V |
150 Cel |
GENERAL PURPOSE |
R-PDSO-G3 |
HIGH RELIABILITY |
1 |
.6 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||||
|
|
ROHM |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.12 A |
1 V |
SCHOTTKY |
10 uA |
1 |
40 V |
SMALL OUTLINE |
40 V |
150 Cel |
GENERAL PURPOSE |
R-PDSO-G3 |
HIGH RELIABILITY |
1 |
.6 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||||
|
|
ROHM |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON ANODE, 2 ELEMENTS |
.2 A |
.8 V |
.05 us |
SCHOTTKY |
2 uA |
2 |
25 V |
SMALL OUTLINE |
30 V |
150 Cel |
GENERAL PURPOSE |
R-PDSO-G3 |
HIGH RELIABILITY |
1 |
.6 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
AEC-Q101 |
||||||||||||||||||||||||||
|
|
ROHM |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
.8 V |
.05 us |
SCHOTTKY |
2 uA |
1 |
25 V |
SMALL OUTLINE |
30 V |
150 Cel |
GENERAL PURPOSE |
R-PDSO-G3 |
HIGH RELIABILITY |
1 |
.6 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
AEC-Q101 |
||||||||||||||||||||||||||
|
|
Infineon Technologies |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
2450 A |
1.5 V |
50000 uA |
1 |
DISK BUTTON |
180 Cel |
GENERAL PURPOSE |
-40 Cel |
O-CEDB-N2 |
1 |
28500 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||
|
|
Infineon Technologies |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
6940 A |
1.45 V |
200000 uA |
1 |
2200 V |
DISK BUTTON |
2200 V |
150 Cel |
GENERAL PURPOSE |
-40 Cel |
O-CEDB-N2 |
1 |
60000 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
|
Comchip Technology |
RECTIFIER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
1 V |
.05 us |
5 uA |
1 |
50 V |
SMALL OUTLINE |
50 V |
150 Cel |
EFFICIENCY |
-55 Cel |
R-PDSO-C2 |
1 |
DO-214AA |
50 V |
50 A |
SILICON |
||||||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
20 A |
1.75 V |
SCHOTTKY |
200 uA |
1 |
650 V |
UNCASED CHIP |
650 V |
175 Cel |
EFFICIENCY |
S-XUUC-N1 |
HIGH RELIABILITY |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON CARBIDE |
|||||||||||||||||||||||||||||
|
Micro Commercial Components |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
1.1 V |
3 us |
5 uA |
1 |
1000 V |
SMALL OUTLINE |
1000 V |
150 Cel |
GENERAL PURPOSE |
-55 Cel |
R-PDSO-F2 |
1 |
LOW LEAKAGE CURRENT |
1 |
1000 V |
30 A |
SILICON |
||||||||||||||||||||||||||||
|
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.62 V |
SCHOTTKY |
100 uA |
1 |
40 V |
SMALL OUTLINE |
40 V |
150 Cel |
GENERAL PURPOSE |
MATTE TIN |
R-PDSO-F2 |
1 |
1 |
75 A |
e3 |
260 |
SILICON |
|||||||||||||||||||||||||||
|
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
5 A |
.52 V |
SCHOTTKY |
220 uA |
1 |
60 V |
SMALL OUTLINE |
60 V |
150 Cel |
POWER |
R-PDSO-F2 |
1 |
205 A |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
UPPER |
NO LEAD |
1 |
YES |
SQUARE |
UNSPECIFIED |
SINGLE |
30 A |
1.75 V |
SCHOTTKY |
200 uA |
1 |
1200 V |
UNCASED CHIP |
1200 V |
175 Cel |
EFFICIENCY |
S-XUUC-N1 |
HIGH RELIABILITY |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON CARBIDE |
|||||||||||||||||||||||||||||
|
|
Comchip Technology |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.125 A |
1.25 V |
.004 us |
1 uA |
1 |
75 V |
SMALL OUTLINE |
75 V |
150 Cel |
FAST RECOVERY |
-65 Cel |
R-PDSO-F2 |
.15 W |
1 |
75 V |
1 A |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||||
|
|
Toshiba |
RECTIFIER DIODE |
YES |
1.2 V |
.5 uA |
80 V |
Other Diodes |
85 V |
150 Cel |
-55 Cel |
.1 W |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||||||||||
|
|
Diodes Incorporated |
RECTIFIER DIODE |
SINGLE |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
5 A |
1.4 V |
.045 us |
10 uA |
1 |
400 V |
SMALL OUTLINE |
400 V |
150 Cel |
EFFICIENCY |
-65 Cel |
MATTE TIN |
R-PSSO-G2 |
CATHODE |
FREE WHEELING DIODE , LOW LEAKAGE CURRENT |
1 |
TO-252 |
400 V |
150 A |
260 |
SILICON |
||||||||||||||||||||||||
|
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.4 V |
AVALANCHE |
70 uA |
1 |
20 V |
SMALL OUTLINE |
20 V |
150 Cel |
FAST SOFT RECOVERY |
-65 Cel |
MATTE TIN |
R-PDSO-G2 |
HIGH RELIABILITY |
1 |
20 V |
10 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
SINGLE |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
5 A |
.56 V |
SCHOTTKY |
2000 uA |
2 |
35 V |
SMALL OUTLINE |
35 V |
150 Cel |
POWER |
-55 Cel |
MATTE TIN |
R-PSSO-G2 |
1 |
CATHODE |
FREE WHEELING DIODE |
1 |
35 V |
50 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
DUAL |
J BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.63 V |
SCHOTTKY |
200 uA |
1 |
60 V |
SMALL OUTLINE |
60 V |
125 Cel |
POWER |
-55 Cel |
MATTE TIN |
R-PDSO-J2 |
1 |
FREE WHEELING DIODE |
1 |
60 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
DUAL |
J BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.45 V |
SCHOTTKY |
300 uA |
1 |
40 V |
SMALL OUTLINE |
40 V |
150 Cel |
POWER |
-55 Cel |
MATTE TIN |
R-PDSO-J2 |
1 |
FREE WHEELING DIODE |
1 |
100 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
DUAL |
FLAT |
5 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
8 A |
.85 V |
SCHOTTKY |
50 uA |
1 |
SMALL OUTLINE |
120 V |
175 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PDSO-F5 |
1 |
CATHODE |
FREE WHEELING DIODE , LOW POWER LOSS |
1 |
150 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
DUAL |
FLAT |
5 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
8 A |
.85 V |
SCHOTTKY |
50 uA |
1 |
SMALL OUTLINE |
120 V |
175 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PDSO-F5 |
1 |
CATHODE |
FREE WHEELING DIODE , LOW POWER LOSS |
1 |
150 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||
|
|
Littelfuse |
RECTIFIER DIODE |
SINGLE |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
8 A |
1.2 V |
4 us |
20 uA |
1 |
1200 V |
SMALL OUTLINE |
1200 V |
150 Cel |
HIGH VOLTAGE |
-40 Cel |
MATTE TIN |
R-PSSO-G2 |
1 |
CATHODE |
1 |
TO-252AA |
180 A |
e3 |
40 |
260 |
SILICON |
MIL-STD-750; UL RECOGNIZED |
||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.435 V |
.015 us |
SCHOTTKY |
75 uA |
1 |
30 V |
CHIP CARRIER |
30 V |
85 Cel |
GENERAL PURPOSE |
-55 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
R-PBCC-N2 |
.48 W |
LOW LEAKAGE CURRENT |
1 |
2.2 A |
e4 |
SILICON |
|||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
DUAL |
J BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.79 V |
SCHOTTKY |
8 uA |
1 |
100 V |
SMALL OUTLINE |
100 V |
175 Cel |
POWER |
-65 Cel |
MATTE TIN |
R-PDSO-J2 |
1 |
FREE WHEELING DIODE |
1 |
130 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
DUAL |
J BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 A |
.75 V |
SCHOTTKY |
500 uA |
1 |
100 V |
SMALL OUTLINE |
100 V |
POWER |
-65 Cel |
MATTE TIN |
R-PDSO-J2 |
1 |
FREE WHEELING DIODE |
1 |
50 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||||||||||
|
|
Littelfuse |
RECTIFIER DIODE |
SINGLE |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
24.5 A |
1.8 V |
SCHOTTKY |
100 uA |
1 |
1200 V |
SMALL OUTLINE |
1200 V |
175 Cel |
EFFICIENCY |
-55 Cel |
R-PSSO-G2 |
CATHODE |
125 W |
1 |
TO-252 |
65 A |
SILICON CARBIDE |
|||||||||||||||||||||||||||
|
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
FLAT |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
10 A |
.47 V |
SCHOTTKY |
300 uA |
1 |
SMALL OUTLINE |
45 V |
150 Cel |
FAST SOFT RECOVERY |
-55 Cel |
MATTE TIN |
R-PDSO-F3 |
1 |
CATHODE |
FREE WHEELING DIODE |
1 |
180 A |
e3 |
260 |
SILICON |
|||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.8 A |
1.3 V |
.25 us |
5 uA |
1 |
600 V |
SMALL OUTLINE |
600 V |
150 Cel |
EFFICIENCY |
-55 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
1 |
30 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||||||||||
|
|
Diodes Incorporated |
RECTIFIER DIODE |
DUAL |
GULL WING |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON ANODE, 2 ELEMENTS |
.07 A |
1 V |
.0025 us |
SCHOTTKY |
.1 uA |
2 |
50 V |
SMALL OUTLINE |
.035 V |
FAST RECOVERY |
-55 Cel |
MATTE TIN |
R-PDSO-G3 |
1 |
.2 W |
HIGH RELIABILITY |
1 |
.1 A |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||||||||
|
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
.5 V |
SCHOTTKY |
25 uA |
1 |
50 V |
CHIP CARRIER |
50 V |
150 Cel |
EFFICIENCY |
-55 Cel |
NICKEL GOLD |
R-PBCC-N2 |
LOW LEAKAGE CURRENT |
1 |
4 A |
e4 |
260 |
SILICON |
||||||||||||||||||||||||||
|
Littelfuse |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
2840 A |
2.38 V |
27 us |
50000 uA |
1 |
2200 V |
DISK BUTTON |
2200 V |
180 Cel |
GENERAL PURPOSE |
-40 Cel |
O-CEDB-N2 |
1 |
22000 A |
SILICON |
|||||||||||||||||||||||||||||||
|
|
Diodes Incorporated |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
COMMON CATHODE, 2 ELEMENTS |
.2 A |
.75 V |
.00299 us |
SCHOTTKY |
2 uA |
2 |
30 V |
CHIP CARRIER |
30 V |
150 Cel |
EFFICIENCY |
-55 Cel |
NICKEL GOLD |
R-PBCC-N3 |
1 |
CATHODE |
LOW LEAKAGE CURRENT |
1 |
7 A |
e4 |
260 |
SILICON |
|||||||||||||||||||||||
|
|
Littelfuse |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
5139 A |
2.62 V |
57 us |
100000 uA |
1 |
4800 V |
DISK BUTTON |
4800 V |
160 Cel |
GENERAL PURPOSE |
-40 Cel |
O-CEDB-N2 |
1 |
60.5 A |
SILICON |
||||||||||||||||||||||||||||||
|
Littelfuse |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
5984 A |
2.12 V |
47 us |
100000 uA |
1 |
3600 V |
DISK BUTTON |
3600 V |
160 Cel |
GENERAL PURPOSE |
-40 Cel |
O-CEDB-N2 |
1 |
68000 A |
SILICON |
|||||||||||||||||||||||||||||||
|
Littelfuse |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
5984 A |
2.12 V |
47 us |
100000 uA |
1 |
4000 V |
DISK BUTTON |
4000 V |
160 Cel |
GENERAL PURPOSE |
-40 Cel |
O-CEDB-N2 |
1 |
68000 A |
SILICON |
|||||||||||||||||||||||||||||||
|
Littelfuse |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
5984 A |
2.12 V |
47 us |
100000 uA |
1 |
3600 V |
DISK BUTTON |
3600 V |
160 Cel |
GENERAL PURPOSE |
-40 Cel |
O-CEDB-N2 |
1 |
68000 A |
SILICON |
|||||||||||||||||||||||||||||||
|
Littelfuse |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
5984 A |
2.12 V |
47 us |
100000 uA |
1 |
4000 V |
DISK BUTTON |
4000 V |
160 Cel |
GENERAL PURPOSE |
-40 Cel |
O-CEDB-N2 |
1 |
68000 A |
SILICON |
|||||||||||||||||||||||||||||||
|
Littelfuse |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
3110 A |
3.05 V |
41 us |
100000 uA |
1 |
6000 V |
DISK BUTTON |
6000 V |
150 Cel |
GENERAL PURPOSE |
-40 Cel |
O-CEDB-N2 |
1 |
36000 A |
SILICON |
|||||||||||||||||||||||||||||||
|
Littelfuse |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
10815 A |
.99 V |
35 us |
150000 uA |
1 |
1800 V |
DISK BUTTON |
1800 V |
175 Cel |
GENERAL PURPOSE |
-40 Cel |
O-CEDB-N2 |
1 |
103900 A |
SILICON |
|||||||||||||||||||||||||||||||
|
Littelfuse |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
10815 A |
.99 V |
35 us |
150000 uA |
1 |
2200 V |
DISK BUTTON |
2200 V |
175 Cel |
GENERAL PURPOSE |
-40 Cel |
O-CEDB-N2 |
1 |
103900 A |
SILICON |
|||||||||||||||||||||||||||||||
|
Littelfuse |
RECTIFIER DIODE |
END |
NO LEAD |
2 |
YES |
ROUND |
CERAMIC, METAL-SEALED COFIRED |
SINGLE |
1975 A |
3.95 V |
45 us |
100000 uA |
1 |
6500 V |
DISK BUTTON |
6500 V |
150 Cel |
GENERAL PURPOSE |
-40 Cel |
O-CEDB-N2 |
1 |
20000 A |
SILICON |
|||||||||||||||||||||||||||||||
|
|
Onsemi |
RECTIFIER DIODE |
UNSPECIFIED |
NO LEAD |
2 |
YES |
RECTANGULAR |
UNSPECIFIED |
SINGLE |
225 A |
1.95 V |
.223 us |
30 uA |
1 |
750 V |
UNCASED CHIP |
750 V |
175 Cel |
FAST SOFT RECOVERY |
-40 Cel |
R-XXUC-N2 |
1 |
750 V |
SILICON |
AEC-Q101 |
|||||||||||||||||||||||||||||
|
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
5 A |
.745 V |
SCHOTTKY |
8 uA |
1 |
100 V |
SMALL OUTLINE |
100 V |
175 Cel |
HIGH VOLTAGE |
R-PDSO-F2 |
1 |
190 A |
SILICON |
|||||||||||||||||||||||||||||||
|
|
STMicroelectronics |
RECTIFIER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3 A |
.84 V |
SCHOTTKY |
1.5 uA |
1 |
100 V |
SMALL OUTLINE |
100 V |
175 Cel |
HIGH VOLTAGE POWER |
-40 Cel |
R-PDSO-F2 |
LOW LEAKAGE CURRENT |
1 |
135 A |
SILICON |
AEC-Q101 |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.