| Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Working Test Current | Config | Frequency Band | Nominal Reference Voltage | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Diode Capacitance | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Nominal Regulation Current (Ireg) | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Application | Maximum Dynamic Impedance | Maximum Limiting Voltage | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | No. of Phases | JEDEC-95 Code | Diode Cap Tolerance | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
NXP Semiconductors |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
7 A |
1.75 V |
.35 us |
1 |
FLANGE MOUNT |
Rectifier Diodes |
1500 V |
150 Cel |
HIGH VOLTAGE FAST SOFT RECOVERY |
TIN |
R-PSFM-T2 |
ISOLATED |
Not Qualified |
1 |
66 A |
e3 |
SILICON |
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|
|
NXP Semiconductors |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
12 A |
1.3 V |
.35 us |
1 |
FLANGE MOUNT |
Rectifier Diodes |
1500 V |
150 Cel |
HIGH VOLTAGE FAST SOFT RECOVERY |
TIN |
R-PSFM-T2 |
ISOLATED |
Not Qualified |
1 |
TO-220AC |
110 A |
e3 |
SILICON |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.6 A |
1.05 V |
3 us |
AVALANCHE |
1 uA |
1 |
200 V |
LONG FORM |
200 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
225 V |
20 A |
SILICON |
IEC-134 |
|||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.6 A |
1.05 V |
3 us |
AVALANCHE |
1 uA |
1 |
400 V |
LONG FORM |
400 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
450 V |
20 A |
SILICON |
IEC-134 |
|||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.6 A |
1.05 V |
3 us |
AVALANCHE |
1 uA |
1 |
600 V |
LONG FORM |
600 V |
175 Cel |
GENERAL PURPOSE |
-65 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
650 V |
20 A |
SILICON |
IEC-134 |
|||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.6 A |
3 us |
AVALANCHE |
1 |
LONG FORM |
800 V |
175 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.6 A |
1.3 V |
.3 us |
AVALANCHE |
1 uA |
1 |
1000 V |
LONG FORM |
1000 V |
175 Cel |
FAST SOFT RECOVERY |
-65 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
1100 V |
20 A |
SILICON |
IEC-134 |
|||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.85 A |
.025 us |
AVALANCHE |
1 |
LONG FORM |
100 V |
175 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.85 A |
.025 us |
AVALANCHE |
1 |
LONG FORM |
200 V |
175 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||
|
|
NXP Semiconductors |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
10 A |
1.45 V |
.3 us |
2 |
FLANGE MOUNT |
Rectifier Diodes |
1500 V |
150 Cel |
HIGH VOLTAGE SOFT RECOVERY |
MATTE TIN |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
1 |
66 A |
e3 |
SILICON |
||||||||||||||||||||||||||||
|
|
NXP Semiconductors |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
7 A |
1.6 V |
.17 us |
1 |
FLANGE MOUNT |
Rectifier Diodes |
1500 V |
150 Cel |
ULTRA FAST SOFT RECOVERY |
MATTE TIN |
R-PSFM-T3 |
Not Qualified |
1 |
77 A |
e3 |
SILICON |
|||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
3 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
8 A |
1.55 V |
.145 us |
2 |
FLANGE MOUNT |
Rectifier Diodes |
600 V |
150 Cel |
HIGH VOLTAGE FAST SOFT RECOVERY |
TIN |
R-PSFM-T3 |
NOT APPLICABLE |
ISOLATED |
Not Qualified |
1 |
66 A |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.68 A |
1 |
LONG FORM |
50 V |
175 Cel |
-65 Cel |
O-LELF-R2 |
ISOLATED |
Not Qualified |
LOW LEAKAGE CURRENT |
1 |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2.5 V |
.035 us |
10 uA |
1 |
FLANGE MOUNT |
600 V |
175 Cel |
HYPER FAST RECOVERY POWER |
R-PSFM-T2 |
ISOLATED |
LOW LEAKAGE CURRENT |
1 |
TO-220AC |
220 A |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3.3 V |
.025 us |
10 uA |
1 |
FLANGE MOUNT |
600 V |
175 Cel |
HYPER FAST RECOVERY POWER |
R-PSFM-T2 |
CATHODE |
LOW LEAKAGE CURRENT |
1 |
TO-220AC |
65 A |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
SINGLE |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
3.4 V |
.018 us |
20 uA |
1 |
SMALL OUTLINE |
600 V |
175 Cel |
HYPER FAST RECOVERY POWER |
R-PSSO-G2 |
CATHODE |
LOW LEAKAGE CURRENT |
1 |
100 A |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 V |
.05 us |
10 uA |
1 |
FLANGE MOUNT |
600 V |
175 Cel |
ULTRA FAST SOFT RECOVERY POWER |
R-PSFM-T2 |
CATHODE |
LOW LEAKAGE CURRENT |
1 |
TO-220AC |
88 A |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
SINGLE |
THROUGH-HOLE |
2 |
NO |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
2 V |
.05 us |
AVALANCHE |
10 uA |
1 |
FLANGE MOUNT |
600 V |
175 Cel |
ULTRA FAST SOFT RECOVERY POWER |
R-PSFM-T2 |
ISOLATED |
LOW LEAKAGE CURRENT |
1 |
TO-220AC |
83 A |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1.25 V |
.075 us |
10 uA |
1 |
LONG FORM |
600 V |
175 Cel |
HIGH VOLTAGE ULTRA FAST SOFT RECOVERY POWER |
O-PALF-W2 |
ISOLATED |
LOW LEAKAGE CURRENT |
1 |
DO-201AD |
110 A |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
PLASTIC/EPOXY |
SINGLE |
1.25 V |
.075 us |
10 uA |
1 |
LONG FORM |
600 V |
175 Cel |
HIGH VOLTAGE ULTRA FAST SOFT RECOVERY POWER |
O-PALF-W2 |
ISOLATED |
LOW LEAKAGE CURRENT |
1 |
DO-201AD |
110 A |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.49 V |
.012 us |
SCHOTTKY |
300 uA |
1 |
SMALL OUTLINE |
45 V |
175 Cel |
EFFICIENCY |
-55 Cel |
R-PDSO-F3 |
CATHODE |
1.66 W |
FREE WHEELING DIODE |
1 |
160 A |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 V |
SCHOTTKY |
1000 uA |
1 |
SMALL OUTLINE |
50 V |
150 Cel |
EFFICIENCY |
-55 Cel |
R-PDSO-F3 |
CATHODE |
.78 W |
FREE WHEELING DIODE |
1 |
SILICON |
AEC-Q101; IEC-60134 |
||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.54 V |
.013 us |
SCHOTTKY |
500 uA |
1 |
SMALL OUTLINE |
45 V |
150 Cel |
EFFICIENCY |
-55 Cel |
R-PDSO-F3 |
CATHODE |
.9 W |
FREE WHEELING DIODE |
1 |
170 A |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.58 V |
.06 us |
SCHOTTKY |
100 uA |
1 |
SMALL OUTLINE |
45 V |
150 Cel |
EFFICIENCY |
-55 Cel |
R-PDSO-F3 |
CATHODE |
1.4 W |
FREE WHEELING DIODE, LOW LEAKAGE CURRENT |
1 |
210 A |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
FLAT |
3 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.49 V |
.016 us |
SCHOTTKY |
600 uA |
1 |
SMALL OUTLINE |
45 V |
150 Cel |
EFFICIENCY |
-55 Cel |
R-PDSO-F3 |
CATHODE |
1.4 W |
FREE WHEELING DIODE |
1 |
180 A |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.2 A |
SCHOTTKY |
1 |
SMALL OUTLINE |
125 Cel |
R-PDSO-G2 |
1 |
SILICON |
||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.0035 us |
SCHOTTKY |
1 |
CHIP CARRIER |
30 V |
150 Cel |
-55 Cel |
R-PBCC-N2 |
.525 W |
1 |
SILICON |
IEC-60134 |
||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.1 A |
.25 V |
.0022 us |
SCHOTTKY |
2000 uA |
1 |
12 V |
CHIP CARRIER |
12 V |
125 Cel |
EFFICIENCY |
-55 Cel |
R-PBCC-N2 |
.325 W |
1 |
12 V |
4 A |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
.5 A |
.55 V |
.0019 us |
SCHOTTKY |
45 uA |
1 |
20 V |
CHIP CARRIER |
20 V |
150 Cel |
EFFICIENCY |
-55 Cel |
R-PBCC-N2 |
.405 W |
1 |
20 V |
4.5 A |
SILICON |
IEC-60134 |
|||||||||||||||||||||||||||
|
NXP Semiconductors |
RECTIFIER DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
1 A |
.565 V |
.0032 us |
SCHOTTKY |
45 uA |
1 |
30 V |
CHIP CARRIER |
30 V |
150 Cel |
EFFICIENCY |
-55 Cel |
R-PBCC-N2 |
.525 W |
1 |
30 V |
10 A |
SILICON |
IEC-60134 |
Diodes and rectifiers are electronic components that allow current to flow in one direction only, and they are widely used in electronic circuits for signal processing, power conversion, and protection.
A diode is a two-terminal electronic component that allows current to flow in one direction only. It consists of a P-N junction, which acts as a one-way valve for current flow. When the diode is forward-biased, it allows current to flow in the forward direction, while when it is reverse-biased, it blocks the current flow.
Rectifiers are electronic devices that convert AC voltage to DC voltage. They consist of one or more diodes arranged in a specific configuration, such as half-wave, full-wave, or bridge rectifier. Rectifiers allow the current to flow in only one direction, effectively converting the AC voltage to DC voltage.
Diodes and rectifiers are used in a wide range of applications, such as power supplies, battery chargers, voltage regulators, and signal processing circuits. They offer several advantages over other types of components, such as simplicity, efficiency, and reliability.
Diodes and rectifiers come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.