PIN DIODE PIN Diodes 112

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Diode Capacitance	Technology	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency
NTE555	Nte Electronics	PIN DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	IN-LINE		125 Cel	SWITCHING	-55 Cel		R-PDIP-T2					.4 W	.48 pF		.0001 us	50 V				SILICON
BAR65-02V-E6327	Infineon Technologies	PIN DIODE				YES			5 mA						0 V		PIN Diodes	125 Cel					.95 ohm	1				.5 pF		.08 us				260		100 MHz
BAR67-02V-E6327	Infineon Technologies	PIN DIODE				YES									5 V		PIN Diodes	125 Cel						1				.35 pF		.7 us	150 V			260
BAR64-02V-E6327	Infineon Technologies	PIN DIODE				YES			1 mA						0 V		PIN Diodes	125 Cel					20 ohm	1				.17 pF		1.55 us	150 V			260		100 MHz
BAR50-02L-E6327	Infineon Technologies	PIN DIODE				YES									1 V		PIN Diodes	125 Cel										.24 pF		1.1 us	50 V			260
BAR50-02V-E6327	Infineon Technologies	PIN DIODE				YES									1 V		PIN Diodes	125 Cel						1				.24 pF		1.1 us	50 V			260
BAR63-02V-E6327	Infineon Technologies	PIN DIODE				YES			5 mA						5 V		PIN Diodes	150 Cel					2 ohm	1				.25 pF		.075 us	50 V			260		100 MHz
BAR63-02W-E6327	Infineon Technologies	PIN DIODE				YES			5 mA						5 V		PIN Diodes	125 Cel					2 ohm	1				.3 pF		.075 us	50 V			260		100 MHz
BAR63-02W-E6433	Infineon Technologies	PIN DIODE				YES			5 mA						5 V		PIN Diodes	125 Cel					2 ohm	1				.3 pF		.075 us	50 V			260		100 MHz
BAP50-03,135	NXP Semiconductors	PIN DIODE				YES			.5 mA						1 V		PIN Diodes	150 Cel			TIN		40 ohm	1				.55 pF			50 V	e3	30	260		100 MHz
HSMP-3815-BLKG	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	100 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR		NICKEL PALLADIUM GOLD	R-PDSO-G3	3 ohm	1				.27 pF	LOW DISTORTION	1.5 us	100 V	e4	20	260	SILICON	100 MHz
HSMP-3815-TR1G	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	100 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	2	50 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR		NICKEL PALLADIUM GOLD	R-PDSO-G3	3 ohm	1				.27 pF	LOW DISTORTION	1.5 us	100 V	e4	20	260	SILICON	100 MHz
JDP2S02ACT(TPL3)	Toshiba	PIN DIODE				YES			10 mA						1 V		PIN Diodes	150 Cel					1.5 ohm					.3 pF			30 V					100 MHz
JDP2S08SC(TPL3)	Toshiba	PIN DIODE				YES			10 mA						1 V		PIN Diodes	150 Cel					1.5 ohm					.21 pF			30 V					100 MHz
JDP4P02AT(TE85L)	Toshiba	PIN DIODE				YES			10 mA						1 V		PIN Diodes	150 Cel					1.5 ohm					.3 pF			30 V					100 MHz
CLA4605-085LF	Skyworks Solutions	PIN DIODE	DUAL	NO LEAD	2	YES	SQUARE	UNSPECIFIED		SINGLE	HIGH FREQUENCY TO C BAND	.045 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		175 Cel	LIMITER			S-XDSO-N2	2 ohm	1	CATHODE	Not Qualified	3 W			.007 us	30 V			260	SILICON
SMP1330-085LF	Skyworks Solutions	PIN DIODE	DUAL	C BEND	2	YES	SQUARE	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY TO C BAND	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		175 Cel	LIMITER			S-PDSO-C2	2 ohm	1	CATHODE	Not Qualified	3 W			.004 us	30 V			260	SILICON
SMP1352-005LF	Skyworks Solutions	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	HIGH FREQUENCY TO S BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE			SWITCHING			R-PDSO-G3	1.35 ohm			Not Qualified	.25 W		LOW DISTORTION	1 us			NOT SPECIFIED	NOT SPECIFIED	SILICON
CLA4603-085LF	Skyworks Solutions	PIN DIODE	DUAL	NO LEAD	2	YES	SQUARE	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY TO C BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		175 Cel	LIMITER	-55 Cel	TIN	S-PDSO-N2	2 ohm	1	CATHODE		2 W			.01 us	20 V	e3		260	SILICON
CLA4606-085LF	Skyworks Solutions	PIN DIODE	DUAL	NO LEAD	2	YES	SQUARE	PLASTIC/EPOXY	10 mA	SINGLE	HIGH FREQUENCY TO C BAND	.38 pF	POSITIVE-INTRINSIC-NEGATIVE	1	6 V	SMALL OUTLINE	PIN Diodes	175 Cel	LIMITER		Tin (Sn)	S-PDSO-N2	2 ohm	1	CATHODE		3 W	.3 pF		.01 us	45 V	e3	40	260	SILICON	500 MHz
CLA4607-085LF	Skyworks Solutions	PIN DIODE	DUAL	NO LEAD	2	YES	SQUARE	PLASTIC/EPOXY	10 mA	SINGLE		.35 pF	SCHOTTKY	1		SMALL OUTLINE		150 Cel	LIMITER	-55 Cel	TIN	S-PDSO-N2	2 ohm	1	CATHODE		1.3 W	.3 pF		.05 us	180 V	e3		260	SILICON	500 MHz
BAR64-02LRH-E6433	Infineon Technologies	PIN DIODE				YES			1 mA						0 V		PIN Diodes	125 Cel					20 ohm	1				.13 pF		1.55 us	150 V			260		100 MHz
RN242CST2R	ROHM	PIN DIODE				YES			3 mA	SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V		PIN Diodes	150 Cel			MATTE TIN		3 ohm	1				.35 pF			30 V	e3		225	SILICON	100 MHz
CLA4608-085LF	Skyworks Solutions	PIN DIODE				YES			10 mA					1	38 V		PIN Diodes	150 Cel		-40 Cel			1.2 ohm	1				.6 pF		.1 us	120 V			260	SILICON	500 MHz
HVD131KRF-E	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY	.8 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		125 Cel	SWITCHING			R-PDSO-F2	1 ohm				.15 W								SILICON
BA595E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-G2	7 ohm	1		Not Qualified				1.6 us	50 V	e3			SILICON
BA595E6433HTMA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G2	7 ohm			Not Qualified				1.6 us	50 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR61E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		COMPLEX	HIGH FREQUENCY	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	3		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-G4		1	ANODE AND CATHODE	Not Qualified	.25 W			1 us		e3			SILICON
BAR88-02VE6327	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE	ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2.5 ohm	1			.25 W	.25 pF		.5 us	80 V	e3		260	SILICON	100 MHz
BAR141E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	HIGH FREQUENCY	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-G3	12 ohm	1			.25 W		LOW DISTORTION	1 us	100 V	e3			SILICON
BAR151E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	HIGH FREQUENCY	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-G3	12 ohm	1			.25 W		LOW DISTORTION	1 us	100 V	e3			SILICON
BAR6302WH6327XTSA1	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	SWITCHING			R-PDSO-F2	2 ohm				.25 W			.075 us	50 V				SILICON
BAR6406E6327HTSA1	Infineon Technologies	PIN DIODE											POSITIVE-INTRINSIC-NEGATIVE								TIN			1								e3			SILICON
BAR6704E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	L BAND	.9 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G3	1.8 ohm				.25 W			.7 us	150 V				SILICON
BAR8802LRHE6327XTSA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		150 Cel	SWITCHING		GOLD	R-XBCC-N2	2.5 ohm	1			.25 W		LOW DISTORTION	.5 us	80 V	e4			SILICON
BAR9002LRHE6327XTSA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		150 Cel	SWITCHING			R-XBCC-N2	2.3 ohm				.25 W			.75 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR9002LSE6327XTSA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		150 Cel	SWITCHING			R-XBCC-N2	2.3 ohm				.15 W			.75 us	80 V				SILICON
DC2011A	Gec Plessey Semiconductors	PIN DIODE	UPPER	NO LEAD	1	YES	ROUND	UNSPECIFIED	25 mA	SINGLE	HIGH FREQUENCY TO KU BAND	.2 pF	POSITIVE-INTRINSIC-NEGATIVE	1		UNCASED CHIP	PIN Diodes	150 Cel	SWITCHING	-55 Cel		O-XUUC-N1	3 ohm			Not Qualified	.25 W			2 us	100 V				SILICON
DC2118A	Gec Plessey Semiconductors	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	100 mA	SINGLE	HIGH FREQUENCY TO KU BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; LIMITER; SWITCHING	-55 Cel		O-CEMW-N2	1 ohm			Not Qualified	.25 W			.05 us	100 V				SILICON
DC2118B	Gec Plessey Semiconductors	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	100 mA	SINGLE	HIGH FREQUENCY TO KU BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; LIMITER; SWITCHING	-55 Cel		O-CEMW-N2	1 ohm			Not Qualified	.25 W			.05 us	100 V				SILICON
DC2552A	Gec Plessey Semiconductors	PIN DIODE	UPPER	NO LEAD	1	YES	ROUND	UNSPECIFIED	25 mA	SINGLE	HIGH FREQUENCY TO KU BAND	.12 pF	POSITIVE-INTRINSIC-NEGATIVE	1		UNCASED CHIP	PIN Diodes	150 Cel	SWITCHING	-55 Cel		O-XUUC-N1	2 ohm			Not Qualified	.25 W			30 us	25 V				SILICON
DC2518A	Gec Plessey Semiconductors	PIN DIODE	UPPER	NO LEAD	1	YES	ROUND	UNSPECIFIED	100 mA	SINGLE	HIGH FREQUENCY TO KU BAND	.15 pF	POSITIVE-INTRINSIC-NEGATIVE	1		UNCASED CHIP	PIN Diodes	150 Cel	SWITCHING	-55 Cel		O-XUUC-N1	1 ohm			Not Qualified	.25 W			500 us	50 V				SILICON
DC2110A	Gec Plessey Semiconductors	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	20 mA	SINGLE	HIGH FREQUENCY TO KU BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; LIMITER; SWITCHING	-55 Cel		O-CEMW-N2	2 ohm			Not Qualified	.25 W			.005 us	50 V				SILICON
CLA4609-086LF	Skyworks Solutions	PIN DIODE	DUAL	NO LEAD	2	YES	SQUARE	UNSPECIFIED	10 mA	SINGLE	C BAND	.6 pF	POSITIVE-INTRINSIC-NEGATIVE	1	30 V	SMALL OUTLINE	PIN Diodes	150 Cel	LIMITER	-55 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	S-XDSO-N2	1.5 ohm	1	CATHODE	Not Qualified				1.1 us	250 V	e4	40	260	SILICON	500 MHz
HSMP-386J-BLKG	Broadcom	PIN DIODE	DUAL	NO LEAD	8	YES	SQUARE	PLASTIC/EPOXY	50 mA	COMPLEX	L BAND	1.25 pF	POSITIVE-INTRINSIC-NEGATIVE	8	50 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING		MATTE TIN	S-PDSO-N8	.77 ohm	1		Not Qualified	2 W	1.2 pF	LOW DISTORTION	.26 us	100 V	e3	20	260	SILICON	100 MHz
HSMP-386J-TR2G	Broadcom	PIN DIODE	DUAL	NO LEAD	8	YES	SQUARE	PLASTIC/EPOXY	50 mA	COMPLEX	L BAND	1.25 pF	POSITIVE-INTRINSIC-NEGATIVE	8	50 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING		MATTE TIN	S-PDSO-N8	.77 ohm	1		Not Qualified	2 W	1.2 pF	LOW DISTORTION	.26 us	100 V	e3	20	260	SILICON	100 MHz
SMP1304-004LF	Skyworks Solutions	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	HIGH FREQUENCY TO L BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE			ATTENUATOR		Matte Tin (Sn)	R-PDSO-G3	2 ohm	1		Not Qualified	.25 W		LOW DISTORTION	1 us		e3	40	260	SILICON
BAR88-02VE6127	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		125 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2.5 ohm				.25 W		LOW DISTORTION	.5 us	80 V	e3			SILICON

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.