2 PIN Diodes 49

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Diode Capacitance	Technology	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	JEDEC-95 Code	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency
NTE555	Nte Electronics	PIN DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	IN-LINE		125 Cel	SWITCHING	-55 Cel		R-PDIP-T2					.4 W	.48 pF		.0001 us		50 V				SILICON
CLA4605-085LF	Skyworks Solutions	PIN DIODE	DUAL	NO LEAD	2	YES	SQUARE	UNSPECIFIED		SINGLE	HIGH FREQUENCY TO C BAND	.045 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		175 Cel	LIMITER			S-XDSO-N2	2 ohm	1	CATHODE	Not Qualified	3 W			.007 us		30 V			260	SILICON
SMP1330-085LF	Skyworks Solutions	PIN DIODE	DUAL	C BEND	2	YES	SQUARE	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY TO C BAND	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		175 Cel	LIMITER			S-PDSO-C2	2 ohm	1	CATHODE	Not Qualified	3 W			.004 us		30 V			260	SILICON
CLA4603-085LF	Skyworks Solutions	PIN DIODE	DUAL	NO LEAD	2	YES	SQUARE	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY TO C BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		175 Cel	LIMITER	-55 Cel	TIN	S-PDSO-N2	2 ohm	1	CATHODE		2 W			.01 us		20 V	e3		260	SILICON
CLA4606-085LF	Skyworks Solutions	PIN DIODE	DUAL	NO LEAD	2	YES	SQUARE	PLASTIC/EPOXY	10 mA	SINGLE	HIGH FREQUENCY TO C BAND	.38 pF	POSITIVE-INTRINSIC-NEGATIVE	1	6 V	SMALL OUTLINE	PIN Diodes	175 Cel	LIMITER		Tin (Sn)	S-PDSO-N2	2 ohm	1	CATHODE		3 W	.3 pF		.01 us		45 V	e3	40	260	SILICON	500 MHz
CLA4607-085LF	Skyworks Solutions	PIN DIODE	DUAL	NO LEAD	2	YES	SQUARE	PLASTIC/EPOXY	10 mA	SINGLE		.35 pF	SCHOTTKY	1		SMALL OUTLINE		150 Cel	LIMITER	-55 Cel	TIN	S-PDSO-N2	2 ohm	1	CATHODE		1.3 W	.3 pF		.05 us		180 V	e3		260	SILICON	500 MHz
HVD131KRF-E	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY	.8 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		125 Cel	SWITCHING			R-PDSO-F2	1 ohm				.15 W									SILICON
BA595E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-G2	7 ohm	1		Not Qualified				1.6 us		50 V	e3			SILICON
BA595E6433HTMA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G2	7 ohm			Not Qualified				1.6 us		50 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR88-02VE6327	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE	ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2.5 ohm	1			.25 W	.25 pF		.5 us		80 V	e3		260	SILICON	100 MHz
BAR6302WH6327XTSA1	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	SWITCHING			R-PDSO-F2	2 ohm				.25 W			.075 us		50 V				SILICON
BAR8802LRHE6327XTSA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		150 Cel	SWITCHING		GOLD	R-XBCC-N2	2.5 ohm	1			.25 W		LOW DISTORTION	.5 us		80 V	e4			SILICON
BAR9002LRHE6327XTSA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		150 Cel	SWITCHING			R-XBCC-N2	2.3 ohm				.25 W			.75 us		80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR9002LSE6327XTSA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		150 Cel	SWITCHING			R-XBCC-N2	2.3 ohm				.15 W			.75 us		80 V				SILICON
DC2118A	Gec Plessey Semiconductors	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	100 mA	SINGLE	HIGH FREQUENCY TO KU BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; LIMITER; SWITCHING	-55 Cel		O-CEMW-N2	1 ohm			Not Qualified	.25 W			.05 us		100 V				SILICON
DC2118B	Gec Plessey Semiconductors	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	100 mA	SINGLE	HIGH FREQUENCY TO KU BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; LIMITER; SWITCHING	-55 Cel		O-CEMW-N2	1 ohm			Not Qualified	.25 W			.05 us		100 V				SILICON
DC2110A	Gec Plessey Semiconductors	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	20 mA	SINGLE	HIGH FREQUENCY TO KU BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE	PIN Diodes	150 Cel	ATTENUATOR; LIMITER; SWITCHING	-55 Cel		O-CEMW-N2	2 ohm			Not Qualified	.25 W			.005 us		50 V				SILICON
CLA4609-086LF	Skyworks Solutions	PIN DIODE	DUAL	NO LEAD	2	YES	SQUARE	UNSPECIFIED	10 mA	SINGLE	C BAND	.6 pF	POSITIVE-INTRINSIC-NEGATIVE	1	30 V	SMALL OUTLINE	PIN Diodes	150 Cel	LIMITER	-55 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	S-XDSO-N2	1.5 ohm	1	CATHODE	Not Qualified				1.1 us		250 V	e4	40	260	SILICON	500 MHz
BAR88-02VE6127	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		125 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2.5 ohm				.25 W		LOW DISTORTION	.5 us		80 V	e3			SILICON
BAP1321-02,115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	1.3 ohm			Not Qualified	.715 W	.4 pF	HIGH VOLTAGE	.5 us		60 V	e3	30	260	SILICON	100 MHz
BAP1321-03,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G2	1.3 ohm	1		Not Qualified	.5 W	.4 pF		.5 us		60 V	e3	30	260	SILICON	100 MHz
BAP50-03,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE		.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes	150 Cel		-65 Cel	TIN	R-PDSO-G2	5 ohm	1		Not Qualified	.5 W	.55 pF				50 V	e3	30	260	SILICON	100 MHz
BAP63-02,115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	1.5 ohm			Not Qualified	.715 W	.36 pF		.31 us		50 V	e3	30	260	SILICON	100 MHz
BAP63-03,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G2	1.5 ohm			Not Qualified	.5 W	.4 pF		.31 us		50 V	e3	30	260	SILICON	100 MHz
BAP65-03,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE		.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G2	.9 ohm	1		Not Qualified	.5 W	.65 pF		.17 us		30 V	e3	30	260	SILICON	100 MHz
BAP70-03,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE		.25 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR	-65 Cel	TIN	R-PDSO-G2	1.9 ohm	1		Not Qualified	.5 W	.57 pF	HIGH VOLTAGE	1.25 us		50 V	e3	30	260	SILICON	100 MHz
BAP63LX,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	CHIP CARRIER	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PBCC-N2	1.5 ohm			Not Qualified	.135 W	.34 pF		.32 us		50 V	e3			SILICON	100 MHz
BAP55L,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.28 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER			ATTENUATOR; SWITCHING		TIN	R-PBCC-N2	.7 ohm			Not Qualified	.5 W			.28 us			e3			SILICON
BAP51LX,315	NXP Semiconductors	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	500 mA	SINGLE	S BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PDSO-N2	1.5 ohm	1		Not Qualified	.14 W	.3 pF		.55 us		60 V	e3	30	260	SILICON	100 MHz
BAP51L,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER			ATTENUATOR; SWITCHING		TIN	R-PBCC-N2	1.5 ohm			Not Qualified	.5 W			.55 us		60 V	e3			SILICON
BAP142LX,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.26 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	CHIP CARRIER	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PBCC-N2	1.3 ohm	1		Not Qualified	.13 W	.25 pF		.11 us		50 V	e3	30	260	SILICON	100 MHz
BAP1321LX,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.38 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	CHIP CARRIER	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel		R-PBCC-N2	1.3 ohm			Not Qualified	.13 W	.32 pF		.48 us		60 V				SILICON	100 MHz
SMP1345-079LF	Skyworks Solutions	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	C BAND	.2 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			ATTENUATOR; SWITCHING		Matte Tin (Sn)	R-PDSO-G2	2 ohm	1	ISOLATED	Not Qualified	.25 W			.1 us			e3	40	260	SILICON
DSG9500-000	Skyworks Solutions	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND TO KU BAND	.02 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE			ATTENUATOR; LIMITER; SWITCHING			R-XDMW-F2	4 ohm			Not Qualified	.25 W			.25 us		200 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
MPN3404G	Onsemi	PIN DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY	2 pF	POSITIVE-INTRINSIC-NEGATIVE	1	15 V	CYLINDRICAL	PIN Diodes	125 Cel	SWITCHING		TIN SILVER COPPER	O-PBCY-T2	.85 ohm			Not Qualified	.4 W	1.3 pF	HIGH VOLTAGE		TO-92	20 V	e1		260	SILICON
MMVL3401T1G	Onsemi	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING		TIN	R-PDSO-G2	.7 ohm	1		Not Qualified	.2 W					35 V	e3	30	260	SILICON	100 MHz
MMVL3700T1G	Onsemi	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING		TIN	R-PDSO-G2	1 ohm	1		Not Qualified	.2 W		HIGH VOLTAGE			200 V	e3	30	260	SILICON
MPN3700G	Onsemi	PIN DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY	1 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	CYLINDRICAL	PIN Diodes	125 Cel	SWITCHING		TIN SILVER COPPER	O-PBCY-T2	1 ohm			Not Qualified	.28 W	1 pF	HIGH VOLTAGE		TO-92	200 V	e1		260	SILICON
HSMP-389Z-BLKG	Broadcom	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	5 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING		MATTE TIN	R-PDSO-G2	2.5 ohm	1		Not Qualified		.3 pF		.2 us		100 V	e3	20	260	SILICON	100 MHz
HSMP-389Z-TR1G	Broadcom	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	5 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING		MATTE TIN	R-PDSO-G2	2.5 ohm	1		Not Qualified		.3 pF		.2 us		100 V	e3	20	260	SILICON	100 MHz
MA4L021-120	M/a-com Technology Solutions	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	HIGH FREQUENCY TO KU BAND		POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE		175 Cel	LIMITER			O-CEMW-N2				Not Qualified			LOW LEAKAGE			35 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
MADP-030025-13140P	M/a-com Technology Solutions	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	GLASS		SINGLE		.56 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		175 Cel	SWITCHING			R-LBCC-N2	.65 ohm		ISOLATED	Not Qualified				2.8 us				NOT SPECIFIED	NOT SPECIFIED	SILICON
HSMP-381Z-BLKG	Broadcom	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	100 mA	SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR		MATTE TIN	R-PDSO-G2	3 ohm	1		Not Qualified		.35 pF		1.5 us		100 V	e3	20	260	SILICON	100 MHz
HSMP-381Z-TR1G	Broadcom	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	100 mA	SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	50 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR		MATTE TIN	R-PDSO-G2	3 ohm	1		Not Qualified		.35 pF		1.5 us		100 V	e3	20	260	SILICON	100 MHz
HSMP-386Z-BLKG	Broadcom	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE			POSITIVE-INTRINSIC-NEGATIVE	1	50 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G2	3 ohm	1		Not Qualified		.2 pF	LOW DISTORTION	.5 us		50 V	e3	20	260	SILICON	100 MHz
HSMP-386Z-TR1G	Broadcom	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE			POSITIVE-INTRINSIC-NEGATIVE	1	50 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G2	3 ohm	1		Not Qualified		.2 pF	LOW DISTORTION	.5 us		50 V	e3	20	260	SILICON	100 MHz
HSMP-389Y-BLKG	Broadcom	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	5 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING		Matte Tin (Sn)	R-PDSO-F2	3.8 ohm	1		Not Qualified		.3 pF		.2 us		100 V	e3	20	260	SILICON	100 MHz
HSMP-389Y-TR1G	Broadcom	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	5 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING		Matte Tin (Sn)	R-PDSO-F2	3.8 ohm	1		Not Qualified		.3 pF		.2 us		100 V	e3	20	260	SILICON	100 MHz

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.