RECTANGULAR PIN Diodes 73

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	JEDEC-95 Code	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency
NTE555	Nte Electronics	PIN DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1 pF	POSITIVE-INTRINSIC-NEGATIVE		1	20 V	IN-LINE			125 Cel	SWITCHING	-55 Cel		R-PDIP-T2					.4 W	.48 pF		.0001 us		50 V				SILICON
HSMP-3815-BLKG	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	100 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR		NICKEL PALLADIUM GOLD	R-PDSO-G3	3 ohm	1				.27 pF	LOW DISTORTION	1.5 us		100 V	e4	20	260	SILICON	100 MHz
HSMP-3815-TR1G	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	100 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR		NICKEL PALLADIUM GOLD	R-PDSO-G3	3 ohm	1				.27 pF	LOW DISTORTION	1.5 us		100 V	e4	20	260	SILICON	100 MHz
SMP1352-005LF	Skyworks Solutions	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	HIGH FREQUENCY TO S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE				SWITCHING			R-PDSO-G3	1.35 ohm			Not Qualified	.25 W		LOW DISTORTION	1 us				NOT SPECIFIED	NOT SPECIFIED	SILICON
HVD131KRF-E	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY		.8 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			125 Cel	SWITCHING			R-PDSO-F2	1 ohm				.15 W									SILICON
BA595E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-G2	7 ohm	1		Not Qualified				1.6 us		50 V	e3			SILICON
BA595E6433HTMA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G2	7 ohm			Not Qualified				1.6 us		50 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR61E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		COMPLEX	HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		3		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-G4		1	ANODE AND CATHODE	Not Qualified	.25 W			1 us			e3			SILICON
BAR88-02VE6327	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE	ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2.5 ohm	1			.25 W	.25 pF		.5 us		80 V	e3		260	SILICON	100 MHz
BAR141E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-G3	12 ohm	1			.25 W		LOW DISTORTION	1 us		100 V	e3			SILICON
BAR151E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-G3	12 ohm	1			.25 W		LOW DISTORTION	1 us		100 V	e3			SILICON
BAR6302WH6327XTSA1	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	SWITCHING			R-PDSO-F2	2 ohm				.25 W			.075 us		50 V				SILICON
BAR6704E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	L BAND		.9 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G3	1.8 ohm				.25 W			.7 us		150 V				SILICON
BAR8802LRHE6327XTSA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			150 Cel	SWITCHING		GOLD	R-XBCC-N2	2.5 ohm	1			.25 W		LOW DISTORTION	.5 us		80 V	e4			SILICON
BAR9002LRHE6327XTSA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			150 Cel	SWITCHING			R-XBCC-N2	2.3 ohm				.25 W			.75 us		80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR9002LSE6327XTSA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			150 Cel	SWITCHING			R-XBCC-N2	2.3 ohm				.15 W			.75 us		80 V				SILICON
SMP1304-004LF	Skyworks Solutions	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	HIGH FREQUENCY TO L BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE				ATTENUATOR		Matte Tin (Sn)	R-PDSO-G3	2 ohm	1		Not Qualified	.25 W		LOW DISTORTION	1 us			e3	40	260	SILICON
BAR88-02VE6127	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			125 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2.5 ohm				.25 W		LOW DISTORTION	.5 us		80 V	e3			SILICON
BAP1321-02,115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.45 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	1.3 ohm			Not Qualified	.715 W	.4 pF	HIGH VOLTAGE	.5 us		60 V	e3	30	260	SILICON	100 MHz
BAP1321-03,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.45 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G2	1.3 ohm	1		Not Qualified	.5 W	.4 pF		.5 us		60 V	e3	30	260	SILICON	100 MHz
BAP1321-04,215	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND		.45 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	1.3 ohm	1		Not Qualified	.25 W	.42 pF		.5 us	TO-236AB	60 V	e3	30	260	SILICON	100 MHz
BAP50-03,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE			.55 pF	POSITIVE-INTRINSIC-NEGATIVE		1	1 V	SMALL OUTLINE	PIN Diodes		150 Cel		-65 Cel	TIN	R-PDSO-G2	5 ohm	1		Not Qualified	.5 W	.55 pF				50 V	e3	30	260	SILICON	100 MHz
BAP50-04W,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.6 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel		-65 Cel	TIN	R-PDSO-G3	5 ohm	1		Not Qualified		.45 pF		1.05 us		50 V	e3	30	260	SILICON	100 MHz
BAP50-05,215	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON CATHODE, 2 ELEMENTS			.6 pF	POSITIVE-INTRINSIC-NEGATIVE		2	1 V	SMALL OUTLINE	PIN Diodes		150 Cel		-65 Cel	TIN	R-PDSO-G3	40 ohm	1		Not Qualified	.25 W	.6 pF				50 V	e3	30	260	SILICON	100 MHz
BAP50-05W,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON CATHODE, 2 ELEMENTS			.6 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel		-65 Cel	TIN	R-PDSO-G3	5 ohm	1		Not Qualified	.24 W	.45 pF		1.05 us		50 V	e3	30	260	SILICON	100 MHz
BAP63-02,115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.32 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	1.5 ohm			Not Qualified	.715 W	.36 pF		.31 us		50 V	e3	30	260	SILICON	100 MHz
BAP63-03,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.32 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G2	1.5 ohm			Not Qualified	.5 W	.4 pF		.31 us		50 V	e3	30	260	SILICON	100 MHz
BAP63-05W,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON CATHODE, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	1.5 ohm			Not Qualified	.24 W	.4 pF		.31 us		50 V	e3	30	260	SILICON	100 MHz
BAP64-04,215	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	40 ohm	1		Not Qualified	.25 W	.52 pF	HIGH VOLTAGE	1.55 us		175 V	e3	30	260	SILICON	100 MHz
BAP64-05,215	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON CATHODE, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	40 ohm	1		Not Qualified	.25 W	.52 pF	HIGH VOLTAGE	1.55 us		175 V	e3	30	260	SILICON	100 MHz
BAP65-03,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE			.9 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G2	.9 ohm	1		Not Qualified	.5 W	.65 pF		.17 us		30 V	e3	30	260	SILICON	100 MHz
BAT18,215	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE			1 pF	POSITIVE-INTRINSIC-NEGATIVE		1	20 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		TIN	R-PDSO-G3	.7 ohm	1		Not Qualified		.75 pF			TO-236AB	35 V	e3	30	260	SILICON	100 MHz
BAP70AM,135	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	6	YES	RECTANGULAR	PLASTIC/EPOXY		2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		1.1 V	.25 pF	POSITIVE-INTRINSIC-NEGATIVE	.1 uA	4	50 V	SMALL OUTLINE	Other Diodes	50 V	150 Cel	ATTENUATOR	-65 Cel	TIN	R-PDSO-G6	1.9 ohm	1		Not Qualified	.3 W		LOW DISTORTION	1.25 us			e3	30	260	SILICON
BAP70-04W,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	1.9 ohm	1		Not Qualified	.26 W	.6 pF		1.25 us		50 V	e3	30	260	SILICON	100 MHz
BAP70-03,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE			.25 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR	-65 Cel	TIN	R-PDSO-G2	1.9 ohm	1		Not Qualified	.5 W	.57 pF	HIGH VOLTAGE	1.25 us		50 V	e3	30	260	SILICON	100 MHz
BAP63LX,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PBCC-N2	1.5 ohm			Not Qualified	.135 W	.34 pF		.32 us		50 V	e3			SILICON	100 MHz
BAP55L,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.28 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER				ATTENUATOR; SWITCHING		TIN	R-PBCC-N2	.7 ohm			Not Qualified	.5 W			.28 us			e3			SILICON
BAP51LX,315	NXP Semiconductors	PIN DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	500 mA	SINGLE	S BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PDSO-N2	1.5 ohm	1		Not Qualified	.14 W	.3 pF		.55 us		60 V	e3	30	260	SILICON	100 MHz
BAP51L,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER				ATTENUATOR; SWITCHING		TIN	R-PBCC-N2	1.5 ohm			Not Qualified	.5 W			.55 us		60 V	e3			SILICON
BAP51-04W,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.55 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel		-65 Cel	TIN	R-PDSO-G3	2.5 ohm	1		Not Qualified	.24 W			.55 us			e3		260	SILICON
BAP142LX,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.26 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PBCC-N2	1.3 ohm	1		Not Qualified	.13 W	.25 pF		.11 us		50 V	e3	30	260	SILICON	100 MHz
BAP1321LX,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.38 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel		R-PBCC-N2	1.3 ohm			Not Qualified	.13 W	.32 pF		.48 us		60 V				SILICON	100 MHz
ASML-5822-BLKG	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		.34 V	.8 pF	POSITIVE-INTRINSIC-NEGATIVE	.1 uA	2	1 V	SMALL OUTLINE	Other Diodes	50 V	150 Cel	LIMITER	-65 Cel	MATTE TIN	R-PDSO-G3	.6 ohm	1		Not Qualified				.07 us		50 V	e3	20	260	SILICON
ASML-5822-TR1G	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		.34 V	.8 pF	POSITIVE-INTRINSIC-NEGATIVE	.1 uA	2	1 V	SMALL OUTLINE	Other Diodes	50 V	150 Cel	LIMITER	-65 Cel	MATTE TIN	R-PDSO-G3	.6 ohm	1		Not Qualified				.07 us		50 V	e3	20	260	SILICON
ASML-5822-TR2G	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		.34 V	.8 pF	POSITIVE-INTRINSIC-NEGATIVE	.1 uA	2	1 V	SMALL OUTLINE	Other Diodes	50 V	150 Cel	LIMITER	-65 Cel	MATTE TIN	R-PDSO-G3	.6 ohm	1		Not Qualified				.07 us		50 V	e3	20	260	SILICON
ASML-5829-BLKG	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.375 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	LIMITER		MATTE TIN	R-PDSO-G3	2.5 ohm	1		Not Qualified				.2 us		100 V	e3			SILICON
ASML-5829-TR1G	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.375 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	LIMITER		MATTE TIN	R-PDSO-G3	2.5 ohm	1		Not Qualified				.2 us		100 V	e3			SILICON
ASML-5829-TR2G	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.375 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	LIMITER		MATTE TIN	R-PDSO-G3	2.5 ohm	1		Not Qualified				.2 us		100 V	e3			SILICON

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.