FLAT PIN Diodes 9

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Diode Capacitance	Technology	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency
HVD131KRF-E	Renesas Electronics	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY	.8 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		125 Cel	SWITCHING			R-PDSO-F2	1 ohm			.15 W								SILICON
BAR88-02VE6327	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE	ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2.5 ohm	1		.25 W	.25 pF		.5 us	80 V	e3		260	SILICON	100 MHz
BAR6302WH6327XTSA1	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	SWITCHING			R-PDSO-F2	2 ohm			.25 W			.075 us	50 V				SILICON
BAR88-02VE6127	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		125 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2.5 ohm			.25 W		LOW DISTORTION	.5 us	80 V	e3			SILICON
BAP1321-02,115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	1.3 ohm		Not Qualified	.715 W	.4 pF	HIGH VOLTAGE	.5 us	60 V	e3	30	260	SILICON	100 MHz
BAP63-02,115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	1.5 ohm		Not Qualified	.715 W	.36 pF		.31 us	50 V	e3	30	260	SILICON	100 MHz
DSG9500-000	Skyworks Solutions	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND TO KU BAND	.02 pF	POSITIVE-INTRINSIC-NEGATIVE	1		MICROWAVE			ATTENUATOR; LIMITER; SWITCHING			R-XDMW-F2	4 ohm		Not Qualified	.25 W			.25 us	200 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
HSMP-389Y-BLKG	Broadcom	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	5 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING		Matte Tin (Sn)	R-PDSO-F2	3.8 ohm	1	Not Qualified		.3 pF		.2 us	100 V	e3	20	260	SILICON	100 MHz
HSMP-389Y-TR1G	Broadcom	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1	5 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING		Matte Tin (Sn)	R-PDSO-F2	3.8 ohm	1	Not Qualified		.3 pF		.2 us	100 V	e3	20	260	SILICON	100 MHz

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.