Infineon Technologies PIN Diodes 32

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Diode Capacitance	Technology	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency	Reference Standard
BAR65-02V-E6327	Infineon Technologies	PIN DIODE				YES			5 mA						0 V		PIN Diodes	125 Cel					.95 ohm	1				.5 pF		.08 us				260		100 MHz
BAR67-02V-E6327	Infineon Technologies	PIN DIODE				YES									5 V		PIN Diodes	125 Cel						1				.35 pF		.7 us	150 V			260
BAR64-02V-E6327	Infineon Technologies	PIN DIODE				YES			1 mA						0 V		PIN Diodes	125 Cel					20 ohm	1				.17 pF		1.55 us	150 V			260		100 MHz
BAR50-02L-E6327	Infineon Technologies	PIN DIODE				YES									1 V		PIN Diodes	125 Cel										.24 pF		1.1 us	50 V			260
BAR50-02V-E6327	Infineon Technologies	PIN DIODE				YES									1 V		PIN Diodes	125 Cel						1				.24 pF		1.1 us	50 V			260
BAR63-02V-E6327	Infineon Technologies	PIN DIODE				YES			5 mA						5 V		PIN Diodes	150 Cel					2 ohm	1				.25 pF		.075 us	50 V			260		100 MHz
BAR63-02W-E6327	Infineon Technologies	PIN DIODE				YES			5 mA						5 V		PIN Diodes	125 Cel					2 ohm	1				.3 pF		.075 us	50 V			260		100 MHz
BAR63-02W-E6433	Infineon Technologies	PIN DIODE				YES			5 mA						5 V		PIN Diodes	125 Cel					2 ohm	1				.3 pF		.075 us	50 V			260		100 MHz
BAR64-02LRH-E6433	Infineon Technologies	PIN DIODE				YES			1 mA						0 V		PIN Diodes	125 Cel					20 ohm	1				.13 pF		1.55 us	150 V			260		100 MHz
BA595E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-G2	7 ohm	1		Not Qualified				1.6 us	50 V	e3			SILICON
BA595E6433HTMA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G2	7 ohm			Not Qualified				1.6 us	50 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR61E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		COMPLEX	HIGH FREQUENCY	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	3		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-G4		1	ANODE AND CATHODE	Not Qualified	.25 W			1 us		e3			SILICON
BAR88-02VE6327	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE	ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2.5 ohm	1			.25 W	.25 pF		.5 us	80 V	e3		260	SILICON	100 MHz
BAR141E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	HIGH FREQUENCY	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-G3	12 ohm	1			.25 W		LOW DISTORTION	1 us	100 V	e3			SILICON
BAR151E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	HIGH FREQUENCY	.5 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-G3	12 ohm	1			.25 W		LOW DISTORTION	1 us	100 V	e3			SILICON
BAR6302WH6327XTSA1	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	SWITCHING			R-PDSO-F2	2 ohm				.25 W			.075 us	50 V				SILICON
BAR6406E6327HTSA1	Infineon Technologies	PIN DIODE											POSITIVE-INTRINSIC-NEGATIVE								TIN			1								e3			SILICON
BAR6704E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	L BAND	.9 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING			R-PDSO-G3	1.8 ohm				.25 W			.7 us	150 V				SILICON
BAR8802LRHE6327XTSA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		150 Cel	SWITCHING		GOLD	R-XBCC-N2	2.5 ohm	1			.25 W		LOW DISTORTION	.5 us	80 V	e4			SILICON
BAR9002LRHE6327XTSA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		150 Cel	SWITCHING			R-XBCC-N2	2.3 ohm				.25 W			.75 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BAR9002LSE6327XTSA1	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	L BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		CHIP CARRIER		150 Cel	SWITCHING			R-XBCC-N2	2.3 ohm				.15 W			.75 us	80 V				SILICON
BAR88-02VE6127	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	L BAND	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		125 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2.5 ohm				.25 W		LOW DISTORTION	.5 us	80 V	e3			SILICON
BA779E6327	Infineon Technologies	PIN DIODE				YES			1.5 mA					1	0 V		PIN Diodes	150 Cel					40 ohm					.26 pF		1.6 us	50 V					100 MHz
BAR65-02LE6327	Infineon Technologies	PIN DIODE				YES			5 mA					1	0 V		PIN Diodes	125 Cel					.95 ohm	1				.5 pF		.08 us				260		100 MHz
BAR50-03WE6327	Infineon Technologies	PIN DIODE				YES								1	1 V		PIN Diodes	125 Cel						1				.24 pF		1.1 us	50 V			260
BAR6304WE6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	SWITCHING			R-PDSO-G3	2 ohm				.25 W			.075 us	50 V				SILICON
BAR6305WE6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	SWITCHING			R-PDSO-G3	2 ohm				.25 W			.075 us	50 V				SILICON
BAR6306WE6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON ANODE, 2 ELEMENTS	S BAND	.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	SWITCHING			R-PDSO-G3	2 ohm				.25 W			.075 us	50 V				SILICON
BAR6405WE6433HTMA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	MEDIUM FREQUENCY TO C BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PDSO-G3	1.35 ohm				.25 W		LOW DISTORTION	1.55 us	150 V		NOT SPECIFIED	NOT SPECIFIED	SILICON		AEC-Q101
BAR6405E6433HTMA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	C BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PDSO-G3	1.35 ohm				.25 W			1.55 us	150 V		NOT SPECIFIED	NOT SPECIFIED	SILICON		AEC-Q101
BAR6405WH6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	C BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PDSO-G3	1.35 ohm				.25 W			1.55 us	150 V		NOT SPECIFIED	NOT SPECIFIED	SILICON		AEC-Q101
BAR6406WE6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON ANODE, 2 ELEMENTS	C BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PDSO-G3	1.35 ohm				.25 W			1.55 us	150 V		NOT SPECIFIED	NOT SPECIFIED	SILICON		AEC-Q101

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.